Journal of Inorganic Materials

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Effects of Oxygen Partial Pressure on the Properties of Transparent Conductive ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering

MA Quan-Bao, YE Zhi-Zhen, HE Hai-Ping, ZHU Li-Ping, ZHANG Yin-Zhu, ZHAO Bing-Hui   

  1. (State Key Laboratory of Silicon Materials, Department of materials, Zhejiang University, Hangzhou 310027, China)
  • Received:2006-12-13 Revised:2007-01-13 Published:2007-11-20 Online:2007-11-20

Abstract: Ga-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The influence of oxygen partial pressure on the structural, electrical and optical properties of ZnO:Ga films was investigated. The X-ray diffraction (XRD) studies show that the films are highly oriented with their crystallographic c-axis perpendicular to the substrate. The grain size of ZnO:Ga films is strongly dependent on the oxygen partial pressure. With the oxygen partial pressure increasing, the grain size of the films increases first, reaches a maximum at 0.30Pa and then decreases. As the oxygen partial pressure increases, the resistivity of ZnO:Ga films decreases gradually, reaches a minimum at 0.30Pa and then increases. The lowest resistivity of ZnO:Ga films obtained at the oxygen partial pressure of 0.30Pa is 3.50×10-4Ω·cm. The average transmittance of the ZnO:Ga thin films is over 90%.

Key words: ZnO:Ga, transparent conductive oxide film, magnetron sputtering, oxygen partial pressure, electrical and optical properties

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