Large-scale Fabrication of Tellurium Nanowire Arrays by Magnetron Sputtering with Controllable Morphology

doi:10.15541/jim20140371

Abstract

Abstract:

A convenient template-free magnetron sputtering method was employed for fabrication of highly ordered single crystalline tellurium nanowire arrays at moderate substrate temperature (200℃). The phase, morphology and microstructure of the as-prepared films were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM). The results indicate that the produced nanowire arrays are composed of single-crystalline Te nanowires, which grow along the [101] direction with needle like morphology. These nanowires have an average diameter of 100 nm and length up to about 1 μm. Working pressure and substrate temperature are both essential for the formation of Te nanowire arrays, which balance the diffusion and growth of Te along [101] direction and (101) plane. The growth mechanism of such nanostructure is proposed, including an absorbing-combining-nucleation-growth process.

Key words: tellurium, nanowire arrays, radio frequency magnetron sputtering

CLC Number:

TB34

ZHANG Zhi-Wei, DENG Yuan. Large-scale Fabrication of Tellurium Nanowire Arrays by Magnetron Sputtering with Controllable Morphology[J]. Journal of Inorganic Materials, 2015, 30(1): 107-112.

Figures/Tables 6

Fig. 1 (a, b) FESEM images of the tellurium nanowire arrays, (c, d) TEM images of a single tellurium nanowire. Inset in (a) shows the cross-sectional view of the nanowire arrays. Inset in (d) shows the HRTEM image on the tip

Fig. 2 XRD patterns of the tellurium nanowire arrays deposited under different Ar pressures and substrate temperatures

Fig. 3 FESEM images of the tellurium nanowire arrays deposited under different Ar pressures. (a, b) 0.5 Pa; (c, d) 1.5 Pa; (e, f) 2.0 Pa. Inset in (e) shows the cross-sectional view of the nanowire arrays

Fig. 4 FESEM images of the tellurium nanowire arrays deposited at (a) 200℃, (b) 250℃ and (c, d) 300℃

Fig. 5 FESEM images of the tellurium nanowire arrays deposited on (a) Si(100) and (b) ITO glass

Fig. 6 Growth mechanism of tellurium nanowire arrays

References 34

[1]	RAO C N R, GOVINDARAJ A. Synthesis of inorganic nanotubes.Advanced Materials, 2009, 21: 4208-4233.
[2]	HOCHBAUM A I, YANG P.Semiconductor nanowires for energy conversion.Chemical Reviews, 2010, 110(1): 527-546.
[3]	BRAMBILLA G.Optical fibre nanowires and microwires: a review.Journal of Optics, 2010, 12(4): 043001.
[4]	PICCIONE B, CHO C H, VAN VUGT L K, et al. All-optical active switching in individual semiconductor nanowires.Nature Nanotechnology, 2012, 7: 640-645.
[5]	SCHMIDT V, WITTEMANN J V, GOSELE U.Growth, thermodynamics, and electrical properties of silicon nanowires.Chemical Reviews, 2010, 110(1): 361-388.
[6]	HOCHBAUM A I, CHEN R, DELGADO R D, et al.Enhanced thermoelectric performance of rough silicon nanowires.Nature, 2008, 451: 163-167.
[7]	BOUKAI A I, BUNIMOVICH Y, TAHIR-KHELI J, et al.Silicon nanowires as efficient thermoelectric materials.Nature, 2008, 451: 168-171.
[8]	XU S, QIN Y, XU C, et al.Self-powered nanowire devices.Nature Nanotechnology, 2010, 5: 366-373.
[9]	LONG Y Z, YU M, SUN B, et al.Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.Chemical Society Reviews, 2012, 41: 4560-4580.
[10]	YAO J, YAN H, LIEBER C M.A nanoscale combing technique for the large-scale assembly of highly aligned nanowires.Nature Nanotechnology, 2013, 8: 329-335.
[11]	LIU C, TANG J, CHEN H M, et al.A fully integrated nanosystem of semiconductor nanowires for direct solar water splitting.Nano Letters, 2013, 13(6): 2989-2992.
[12]	GHOSHAL T, SENTHAMARAIKANNAN R, SHAW M T, et al.Fabrication of ordered, large scale, horizontally-aligned Si nanowire arrays based on an in situ hard mask block copolymer approach.Advanced Materials, 2014, 26: 1207-1216.
[13]	TANGNEY P, FAHY S.Density-functional theory approach to ultrafast laser excitation of semiconductors: application to the A1 phonon in tellurium.Physical Review B, 2002, 65: 054302.
[14]	WANG Y, TANG Z, PODSIADLO P, et al.Mirror-like photoconductive layer-by-layer thin films of Te nanowires: the fusion of semiconductor, metal, and insulator properties.Advanced Materials, 2006, 18(4): 518-522.
[15]	SICILIANO T, FILIPPO E, GENGA A, et al.Single-crystalline Te microtubes: synthesis and NO2 gas sensor application.Sensors and Actuators B: Chemical, 2009, 142(1): 185-190.
[16]	XI G, LIU Y, WANG X, et al.Large-scale synthesis, growth mechanism, and photoluminescence of ultrathin Te nanowires.Crystal Growth & Design, 2006, 6(11): 2567-2570.
[17]	SAFDAR M, ZHAN X, NIU M, et al.Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters.Nanotechnology, 2013, 24: 185705.
[18]	PENG H, KIOUSSIS N, SNYDER G J.Elemental tellurium as a chiral p-type thermoelectric material.Physical Review B, 2014, 89: 195206.
[19]	LEE T L, LEE S, LEE E, et al.High-power density piezoelectric energy harvesting using radially strained ultrathin trigonal tellurium nanowire assembly.Advanced Materials, 2013, 25(21): 2920-2925.
[20]	DENG Y, ZHANG Z, WANG Y, et al.Two-step synthesis of Bi2Te3-Te nanoarrays with sheet-rod multiple heterostructure.Journal of Solid State Chemistry, 2010, 183: 2631-2635.
[21]	MOHANTY P, KANG T, KIM B.Synthesis of single crystalline tellurium nanotubes with triangular and hexagonal cross sections.Journal of Physical Chemistry B, 2006, 110(2): 791-795.
[22]	ZHANG B, HOU W, YE X, et al.1D tellurium nanostructures: photothermally assisted morphology-controlled synthesis and applications in preparing functional nanoscale materials.Advanced Functional Materials, 2007, 17(3): 486-492.
[23]	ZHU Y, WANG W, QI R, et al.Microwave-assisted synthesis of single-crystalline tellurium nanorods and nanowires in ionic liquids.Angewandte Chemie, 2004, 116(11): 1434-1438.
[24]	QIAN H, YU S, GONG J, et al.High-quality luminescent tellurium nanowires of several nanometers in diameter and high aspect ratio synthesized by a poly (vinyl pyrrolidone)-assisted hydrothermal process.Langmuir, 2006, 22(8): 3830-3835.
[25]	WANG Z, WANG L, HUANG J, et al.Formation of single-crystal tellurium nanowires and nanotubes via hydrothermal recrystallization and their gas sensing properties at room temperature.Journal of Materials Chemistry, 2010, 20: 2457-2463.
[26]	SONG J, LIN Y, ZHAN Y, et al.Superlong high-quality tellurium nanotubes: synthesis, characterization, and optical property.Crystal Growth & Design, 2008, 8(6): 1902-1908.
[27]	ZHAO A, YE C, MENG G, et al.Tellurium nanowire arrays synthesized by electrochemical and electrophoretic deposition.Journal of Materials Research, 2003, 18(10): 2318-2322.
[28]	ZHAO A, ZHANG L, PANG Y, et al.Ordered tellurium nanowire arrays and their optical properties.Applied Physics A, 2005, 80: 1725-1728.
[29]	CHU C, ARAFIN S, NIE T, et al.Nanoscale growth of GaAs on patterned Si(111) substrates by molecular beam epitaxy.Crystal Growth & Design, 2014, 14(2): 593-598.
[30]	SREEPRASAD T S, SAMAL A K, PRADEEP T.Bending and shell formation of tellurium nanowires induced by thiols.Chemistry of Materials, 2009, 21: 4527-4540.
[31]	XIA Y, YANG P, SUN Y, et al.One-dimensional nanostructures: synthesis, characterization, and applications.Advanced Materials, 2003, 15(5): 353-389.
[32]	SEN S, BHATTA U M, KUMAR V, et al.Synthesis of tellurium nanostructures by physical vapor deposition and their growth mechanism.Crystal Growth & Design, 2008, 8(1): 238-242.
[33]	DENG Y, XIANG Y, SONG Y.Template-free synthesis and transport properties of Bi2Te3 ordered nanowire arrays via a physical vapor process.Crystal Growth & Design, 2009, 9(7): 3079-3082.
[34]	DENG Y, LIANG H, WANG Y, et al.Growth and transport properties of oriented bismuth telluride films.Journal of Alloys and Compounds, 2011, 509: 5683-5687.