Journal of Inorganic Materials ›› 2024, Vol. 39 ›› Issue (3): 306-312.DOI: 10.15541/jim20230316

• RESEARCH ARTICLE • Previous Articles     Next Articles

Improvement of Thermoelectric Performance of SnTe by Energy Band Optimization and Carrier Regulation

CHEN Hao1(), FAN Wenhao2, AN Decheng3, CHEN Shaoping1()   

  1. 1. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
    2. College of Physics, Taiyuan University of Technology, Taiyuan 030024, China
    3. College of Chemistry, Taiyuan University of Technology, Taiyuan 030024, China
  • Received:2023-07-13 Revised:2023-09-14 Published:2024-03-20 Online:2023-10-07
  • Contact: CHEN Shaoping, professor. E-mail: chenshaoping@tyut.edu.cn
  • About author:CHEN Hao (1995-), male, Master candidate. E-mail: chenha024@163.com
  • Supported by:
    National Natural Science Foundation of China(52202277);Natural Science Foundation of Shanxi Province(202203021221071);Special Project of Scientific and Technological Cooperation and Exchange in Shanxi Province(202104041101007);Shanxi Scholarship Council of China(2023-083)

Abstract:

As group ⅣA tellurides, SnTe has the same crystal structure and similar bivalent band structure as PbTe, making it a promising thermoelectric material. However, the main concern of softening at elevated temperature and lower ZT at low temperatures has been hindering its application. Therefore, it is significant to expand the service temperature range of SnTe by improving its average ZT. It has been reported that the thermoelectric performance of SnTe is improved by regulating the power factor and lattice thermal conductivity based on band and lattice engineering. In this study, MgSe alloying strategy was used to prepare a series of Sn1-yPbyTe-x%MgSe(0.01≤y≤0.05, 0≤x≤6) samples by combining melting and Spark Plasma Sintering (SPS) techniques. The results show that alloying MgSe leads to an increase in the band gap, effectively suppressing the bipolar effect of intrinsic SnTe, improving the Seebeck coefficient in the high-temperature range, and reducing lattice thermal conductivity through phonon scattering as well. As a result, ZT at 873 K is improved by 100%. The incorporation of Pb effectively modulates the carrier concentration, successfully suppressing electronic thermal conductivity, and thereby improving average thermoelectric performance of SnTe. Among them, Sn0.96Pb0.04Te-4%MgSe possesses a ZT value of 1.5 at 873 K and an average ZT value of 0.8 at 423-873 K, displaying superior performance compared to literature.

Key words: thermoelectric material, carrier modulation, alloying, band engineering, SnTe

CLC Number: