Journal of Inorganic Materials ›› 2020, Vol. 35 ›› Issue (9): 1041-1046.DOI: 10.15541/jim20190570

Special Issue: 能源材料论文精选(三):热电与燃料电池(2020) 【虚拟专辑】热电材料(2020~2021)

• RESEARCH PAPER • Previous Articles     Next Articles

Effect of Rare-earth Variable-valence Element Eu doping on Thermoelectric Property of BiCuSeO

KANG Huijun1(),ZHANG Xiaoying1,WANG Yanxia2,LI Jianbo1,YANG Xiong1,LIU Daquan1,YANG Zerong1,WANG Tongmin1()   

  1. 1. Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
    2. Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China
  • Received:2019-11-08 Revised:2019-12-16 Published:2020-09-20 Online:2020-01-15
  • Supported by:
    National Natural Science Foundation of China(51971052);National Natural Science Foundation of China(51774065);National Science Fund for Distinguished Young Scholars(51525401);Liaoning Revitalization Talents Program(XLYC1808005);Dalian High Level Talents Innovation Support Plan(2017RQ026)


As a new promising thermoelectrical material in the range of intermediate temperature, BiCuSeO attracts much attention due to the combination of low intrinsic thermal conductivity and relatively high Seebeck coefficient. In this study, the effects of substituting variable-valence rare-earth element Eu for Bi site on the microstructure and thermoelectric performance of BiCuSeO-based material were investigated. The results indicate that ions of two valence states, Eu2+ and Eu3+, coexist in the doped BiCuSeO samples. The doping of Eu not only improves the concentration of the carriers, but also modifies the band structure of BiCuSeO matrix, resulting in effective improvement of electrical transport properties. The electrical conductivity of Bi0.85Eu0.15CuSeO reaches 98 S·cm-1 at 823 K, which is 6 times as high as that of the undoped sample. The power factor of 0.32 mW·m-1·K-2 and ZT of 0.49 can be achieved at 823 K for Bi0.975Eu0.025CuSeO sample. This study shows that the doping of variable-valence rare-earth elements can effectively improve the thermoelectric properties of BiCuSeO.

Key words: thermoelectric materials, BiCuSeO, variable-valence element doping

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