Columnar Nanograined BaTiO3 Ferroelectric Thin Films Integrated on Si with a Sizable Dielectric Tunability

doi:10.15541/jim20210437

Abstract

Abstract:

BaTiO₃ has a wide range of applications in microelectromechanical systems and integrated circuits due to its excellent dielectric, ferroelectric, piezoelectric, and pyroelectric properties. For the applied research and device applications of BaTiO₃ films, reducing its deposition temperature to be compatible with the CMOS-Si technology is an important Challenge. Here, with the help of a LaNiO₃ buffer layer which has a closely-matched lattice with BaTiO₃, (001)-textured BaTiO₃ films were sputter-deposited at 450 ℃ on single crystalline Si(100) substrates, which consisting of well-cryotallized, evenly-distributed columnar nanograins with an average grain size of 27 nm. Our result showed that this deposition temperature can maintain the columnar nanograin structure with a relatively large grain size, leading to a good ferroelectric performance. In addition, a small residual strain on Si was also helpful to improve its ferroelectric and dielectric properties. The remnant polarization and saturated polarization of these BaTiO₃ films reached 7 and 43 μC·cm^-2, respectively, while leakage current densities were as low as 10^-5 A·cm^-2 at an applied electric field of 0.8 MV·cm^-1. These BaTiO₃ films also displayed excellent frequency stability with a low dielectric loss in which relative dielectric constant measured to be ~155 at 1 kHz, slightly being reduced to ~145 after increasing the frequency to 1 MHz. Meanwhile, the dielectric loss slightly increased from 0.01 at 1 kHz to 0.03 at 1 MHz. Lastly, through capacitance-voltage (C-V) tests, these films exhibited a large dielectric tunability of~51% and a figure of merit (FOM) of ~17 (@1 MHz). These films have a good potential for applications in tunable dielectrics.

Key words: silicon, BaTiO₃, ferroelectric film, columnar nanograins, dielectric tunability, figure of merit

CLC Number:

TQ174

ZHAO Yuyao, OUYANG Jun. Columnar Nanograined BaTiO₃ Ferroelectric Thin Films Integrated on Si with a Sizable Dielectric Tunability[J]. Journal of Inorganic Materials, 2022, 37(6): 596-602.

Figures/Tables 4

Fig. 1 Phase structure analyses of BaTiO3 films (a) XRD patterns of BaTiO3 films deposited at different temperatures; (b) Magnified area near BaTiO3(002)/LaNiO3(200) peaks from (a) with inset showing XRD patterns over 20°-50° at a low scanning rate (1 (°)/min)

Fig. 2 Nanostructures of BaTiO3 films deposited at (a-c) 450 ℃ and (d-f) 500 ℃ (a-c) 450 ℃-deposited BaTiO3 film: (a) Low magnification cross-sectional TEM image; (b) Low-resolution TEM image of the interface between LaNiO3 and BaTiO3; (c) High-resolution TEM image of the interface between LaNiO3 and BaTiO3 with the yellow dashed line showing the interface of LaNiO3/BaTiO3, while the white dashed lines showing a conformally grown BaTiO3 nanograin from its interface with LaNiO3 (d-f) 500 ℃-deposited BaTiO3 film: (d) Low magnification cross-sectional TEM image; (e) Low-resolution TEM image of the interface between LaNiO3 and BaTiO3; (f) High-resolution TEM image of the interface between LaNiO3 and BaTiO3 with the yellow dashed line showing the interface of LaNiO3/BaTiO3

Fig. 3 Electrical performance of BaTiO3 films (a) Standard P-E hysteresis loops; (b) The maximum polarization (Pm) and self-polarization (PS), as well as Pm-Ps of the BaTiO3 films as functions of the applied electric field; (c) Small-field (Vp-p=1 V) dielectric constant and loss tangent as functions of the measuring frequency (εr-f and tanδ-f); (d) Leakage current density vs the applied DC electric field

Fig. 4 Dielectric tunability performance of the BaTiO3 films Dielectric constant (εr) as a function of E from (a) P-E and (b) C-V test results with loss tangent as a function of E; (c) Dielectric tunability and figure of merit as functions of E with data points were taken from (b); (d) Comparison with other leading ferroelectric films in dielectric tunability and deposition temperature

References 30

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Columnar Nanograined BaTiO₃ Ferroelectric Thin Films Integrated on Si with a Sizable Dielectric Tunability

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