高能微波辐照条件下SiC晶粒的生长过程分析

doi:10.3724/SP.J.1077.2014.13237

无机材料学报 ›› 2014, Vol. 29 ›› Issue (2): 149-154.DOI: 10.3724/SP.J.1077.2014.13237 CSTR: 32189.14.SP.J.1077.2014.13237

高能微波辐照条件下SiC晶粒的生长过程分析

黄珊, 王继刚, 刘松, 李凡

(江苏省先进金属材料重点实验室东南大学, 材料科学与工程学院, 南京 211189; 东南大学张家港工业技术研究院, 张家港215628)

收稿日期:2013-05-02 修回日期:2013-06-19 出版日期:2014-02-20 网络出版日期:2014-01-17
作者简介:黄珊(1990–), 女, 硕士研究生. E-mail: huangs19901026@163.com
基金资助:
教育部新世纪优秀人才支持计划(NCET-12-0119); 江苏省青蓝工程

Growth Process of SiC Grains Prepared by High-energy Microwave Irradiation

HUANG Shan, WANG Ji-Gang, LIU Song, LI Fan

(Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China; Southeast University-Zhangjiagang Industry Technology Research Institute, Zhangjiagang 215628, China)

Received:2013-05-02 Revised:2013-06-19 Published:2014-02-20 Online:2014-01-17
About author:HUANG Shan. E-mail: huangs19901026@163.com
Supported by:
Program for New Century Excellent Talents in University (NCET-12-0119) and Qing-lan Project of Jiangsu Province

摘要/Abstract

摘要： 利用高能真空微波辐照, 仅以SiO₂和人造石墨粉为原料, 便捷快速地合成得到结晶良好的β-SiC晶粒。在利用各种表征手段综合分析SiC晶粒微观结构的基础上, 确认高能微波辐照条件下, β-SiC晶粒的生长过程符合“光滑界面的二维形核生长”机制。借助于电子背散射衍射技术(EBSD)进行的原位解析发现, 生长最快的{211}面在晶粒长大过程中逐渐被超覆, 通过形成{421}过渡晶面而最终演变为{220}晶面, 并成为晶粒的侧面; 而生长最慢的{111}面则成为最后保留下来的六角形规则晶面。EBSD的解析结果为SiC晶粒生长过程中晶面演变提供了直接的实验证据。

关键词: 微波, 微米晶粒, 碳化硅, 生长机理

Abstract: High-energy vacuum microwave irradiation was directly applied to synthesize silicon carbide (SiC). Results indicated that the well-crystallized β-SiC grains can be obtained rapidly and conveniently via microwave approach, even simply constituents covering silica dioxide powders and artificial graphite were employed as raw materials. Based on the comprehensive micro-structural characterizations, the formation of β-SiC, under high-energy vacuum microwave irradiation, could be properly explained by the mechanism of two-dimension nucleation and growth. Besides, the technology of electron backscattered diffraction (EBSD) was particularly used to characterize the crystal plane of the observed SiC grains. The corresponding calculation of Euler angles suggested that the fastest-growing crystal planes {211} should be overlapped gradually, and the evolution from {211} to {220} crystal planes should be realized through the formation of {421} transformation plane. The most stable crystal planes of {111} became the regular hexagonal planes in the end, which can be explained by the Bravis rule. Correspondingly, the {220} crystal planes were finally existed as the side-planes of SiC grains. The detailed EBSD investigation provided the experimental evidences for the evolution of crystal planes in the growth process.

Key words: microwave, micro-grains, SiC, growth mechanism

中图分类号:

TN304

黄珊, 王继刚, 刘松, 李凡. 高能微波辐照条件下SiC晶粒的生长过程分析[J]. 无机材料学报, 2014, 29(2): 149-154.

HUANG Shan, WANG Ji-Gang, LIU Song, LI Fan. Growth Process of SiC Grains Prepared by High-energy Microwave Irradiation[J]. Journal of Inorganic Materials, 2014, 29(2): 149-154.

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高能微波辐照条件下SiC晶粒的生长过程分析

Growth Process of SiC Grains Prepared by High-energy Microwave Irradiation

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