高压PLD法生长p型钠掺杂氧化锌纳米线阵列

doi:10.3724/SP.J.1077.2014.13284

无机材料学报 ›› 2014, Vol. 29 ›› Issue (2): 155-161.DOI: 10.3724/SP.J.1077.2014.13284 CSTR: 32189.14.SP.J.1077.2014.13284

高压PLD法生长p型钠掺杂氧化锌纳米线阵列

邱智文¹, 杨晓朋¹, 韩军¹, 曾雪松², 李新化², 曹丙强¹

(1. 济南大学材料科学与工程学院, 山东省高校无机功能材料重点实验室, 济南250022; 2. 中国科学院固体物理研究所, 中国科学院材料物理重点实验室, 合肥230031)

收稿日期:2013-05-27 修回日期:2013-07-01 出版日期:2014-02-20 网络出版日期:2014-01-17
作者简介:邱智文(1988-), 女, 硕士研究生. E-mail: qzw0531@126.com
基金资助:
国家自然科学基金(51002065; 11174112); 山东省泰山学者基金(TSHW20091007); 山东省自然科学基金(BS2010 CL003); 教育部新世纪优秀人才支持计划(NCET-11-1027, 213021A)

p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

QIU Zhi-Wen¹, YANG Xiao-Peng¹, HAN Jun¹, ZENG Xue-Song², LI Xin-Hua², CAO Bing-Qiang¹

(1. Key Lab of Inorganic Functional Material in Universities of Shandong, School of Material Science and Engineering, University of Jinan, Jinan 250022, China; 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031,China)

Received:2013-05-27 Revised:2013-07-01 Published:2014-02-20 Online:2014-01-17
About author:QIU Zhi-Wen. E-mail: qzw0531@126.com
Supported by:
National Natural Science Foundation of China (51002065; 11174112); Shandong Taishan Scholar Foundation (TSHW20091007); Shandong Provincial Natural Science Foundation (BS2010CL003); Program for New Century Excellent Talents in University, MOE of China (NCET-11-1027, 213021A)

摘要/Abstract

摘要： 采用高压脉冲激光沉积法(HP-PLD)研究了压强、金催化层厚度对钠掺杂氧化锌纳米线(ZnO:Na)生长的影响, 并制备了ZnO:Al薄膜/ZnO:Na纳米线阵列同质pn结器件。实验发现, 当金膜厚度为4.2 nm, 生长压强为3.33×10⁴ Pa, 生长温度为875℃时, 可在单晶Si衬底上生长c轴取向性良好的ZnO纳米线阵列。X射线衍射和X射线光电子能谱综合分析证实了Na元素成功掺入ZnO纳米线晶格中。在低温(15 K)光致发光谱中, 观测到了一系列由Na掺杂ZnO产生引起的受主光谱指纹特征, 如中性受主束缚激子峰(3.356 eV, A0X)、导带电子到受主峰(3.312 eV, (e, A0))和施主受主对发光峰(3.233 eV, DAP)等。通过在ZnO:Al薄膜上生长ZnO:Na纳米线阵列形成同质结, 测得I-V曲线具有明显的整流特性, 证实了ZnO:Na纳米线具有良好的p型导电性能。

关键词: 钠掺杂, 氧化锌纳米线, 高压脉冲激光沉积(HP-PLD)

Abstract: Sodium-doped ZnO (ZnO:Na) nanowire arrays were grown with high-pressure pulsed laser deposition (HP-PLD). The influence of growth pressure and thickness of gold catalyst layer on the growth of ZnO:Na nanowires were systemically studied. It is found that c-orientated ZnO nanowire arrays grow on single crystal silicon substrates under the optimized condition, e.g. gold catalyst layer’s thickness of 4.2 nm, growth pressure of 3.33×104 Pa and growth temperature of 875 ℃. X-ray diffraction pattern and X-ray photoelectron spectroscope analyses indicate that Na is introduced into ZnO nanowires successfully. Optical fingerprints of sodium-related acceptors in the low-temperature (15 K) photoluminescence spectrum are observed, such as neutral acceptor-bound exciton emission (3.356 eV, A0X), free-electron to neutral-acceptor emission (3.312 eV, (e, A0)), and donor-to-acceptor pair emission (3.233 eV, DAP). ZnO:Na nanowire arrays grown on ZnO:Al/sapphire substrates form the pn junction. The corresponding I-V curve measurements exhibit a clear rectifying behavior of pn homojunction, which further indicates that such ZnO:Na nanowire is of p-type conductivity.

Key words: ZnO nanowires, high-pressure pulsed laser deposition

中图分类号:

TQ132
O472

邱智文, 杨晓朋,韩军, 曾雪松, 李新化, 曹丙强. 高压PLD法生长p型钠掺杂氧化锌纳米线阵列[J]. 无机材料学报, 2014, 29(2): 155-161.

QIU Zhi-Wen, YANG Xiao-Peng, HAN Jun1 ZENG Xue-Song, LI Xin-Hua, CAO Bing-Qiang. p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition[J]. Journal of Inorganic Materials, 2014, 29(2): 155-161.

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高压PLD法生长p型钠掺杂氧化锌纳米线阵列

p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

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