无机材料学报 ›› 2025, Vol. 40 ›› Issue (6): 704-710.DOI: 10.15541/jim20240549

• 研究快报 • 上一篇    下一篇

Ga3+掺杂对SrAl2Si2O8陶瓷晶体结构及微波介电性能的影响

尹长志1,2(), 成名飞1,2, 雷微程1,2, 蔡弋炀1,2, 宋小强1,2, 付明1,2, 吕文中1,2, 雷文1,2()   

  1. 1.华中科技大学 光学与电子信息学院, 电子信息功能材料教育部重点实验室(B), 武汉 430074
    2.华中科技大学温州先进制造技术研究院, 温州市微波通信材料与器件重点实验室, 温州 325000
  • 收稿日期:2024-12-31 修回日期:2025-02-26 出版日期:2025-06-20 网络出版日期:2025-03-06
  • 通讯作者: 雷 文, 研究员. E-mail: wenlei@mail.hust.edu.cn
  • 作者简介:尹长志(1994-), 男, 博士研究生. E-mail: ychangzhi@163.com

Effect of Ga3+ Doping on Crystal Structure Evolution and Microwave Dielectric Properties of SrAl2Si2O8 Ceramic

YIN Changzhi1,2(), CHENG Mingfei1,2, LEI Weicheng1,2, CAI Yiyang1,2, SONG Xiaoqiang1,2, FU Ming1,2, LÜ Wenzhong1,2, LEI Wen1,2()   

  1. 1. Key Lab of Functional Materials for Electronic Information (B) of MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
    2. Wenzhou Key Laboratory of Microwave Communication Materials and Devices, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325000, China
  • Received:2024-12-31 Revised:2025-02-26 Published:2025-06-20 Online:2025-03-06
  • Contact: LEI Wen, professor. E-mail: wenlei@mail.hust.edu.cn
  • About author:YIN Changzhi (1994-), male, PhD candidate. E-mail: ychangzhi@163.com
  • Supported by:
    National Natural Science Foundation of China(52302140);Major Scientific and Technological Innovation Project of Wenzhou(ZG2023040);Major Scientific and Technological Innovation Project of Wenzhou(ZG2023042);Joint Funds of the National Natural Science Foundation of China Key Program(U21B2068)

摘要:

长石基微波介质陶瓷以其较低的相对介电常数(εr)和优异的力学性能在5G通信技术中备受关注。本工作采用传统固相法合成了系列微波介质陶瓷SrAl2-xGaxSi2O8(0.1≤x≤2.0)。XRD分析表明, Ga3+能够进入Al3+晶格并形成固溶体。此外, Ga3+取代Al3+可以促使空间群由I2/c(0.1≤x≤1.4)转变为P21/a(1.6≤x≤2.0), 热膨胀系数(CTE)由2.9×10-6-1升高到5.2×10-6-1。空间群演变有效提高了晶体结构的对称性, 从而改善了材料的介电性能和力学性能。Rietveld精修结果表明, Ga3+平均占据4个Al3+晶格位置。所有陶瓷样品均具有致密的显微结构和较高的相对密度(超过95%)。x=1.6所获得的材料具有超低εr(5.8), 品质因数(Q×f)为50700 GHz, 以及负的谐振频率温度系数(τf约为-35×10-6-1)。通过添加质量分数4%的LiF, 陶瓷致密化温度可降低至940 ℃, 并且该复合陶瓷与Ag电极之间展现出良好的化学兼容性。同时, 通过添加CaTiO3陶瓷, 可以将负τf调整到接近零(+3.7×10-6-1)。

关键词: 离子取代, 微波介电陶瓷, 介电性能, 低温共烧陶瓷

Abstract:

The feldspar-based microwave dielectric ceramic with low relative permittivity (εr) and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology. In this work, a series of microwave dielectric ceramic SrAl2-xGaxSi2O8 (0.1≤x≤2.0) was synthesized using the traditional solid-state method. X-ray diffraction pattern indicates that Ga3+ can be dissolved into Al3+, forming a solid solution. Meanwhile, substitution of Ga3+ for Al3+ can promote the space group transition from I2/c (0.1≤x≤1.4) to P21/a (1.6≤x≤2.0) with coefficient of thermal expansion (CTE) increasing from 2.9×10-6-1 to 5.2×10-6-1. During this substitution, the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties. Rietveld refinement results indicate that Ga3+ averagely occupied four Al3+ compositions to form solid solution. All ceramics have a dense microstructure and high relative density above 95%. An ultralow εr of 5.8 was obtained at x=1.6 composition with high quality factor (Q×f) of 50700 GHz and negative temperature coefficients of resonant frequency (τf) of approximately −35×10-6-1. The densification temperature can be reduced to 940 ℃ by adding 4% (in mass) LiF, resulting in good chemical compatibility with Ag electrode. Meanwhile, negative τf can be tuned to near-zero (+3.7×10-6-1) by adding CaTiO3 ceramic.

Key words: ion substitution, microwave dielectric ceramic, dielectric property, low-temperature co-fired ceramic

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