非本征背照触发平面型4H-SiC光导开关性能研究

doi:10.15541/jim20240136

无机材料学报

非本征背照触发平面型4H-SiC光导开关性能研究

王浩^1,2, 刘学超¹, 郑重³, 潘秀红¹, 徐锦涛¹, 朱新锋^1,2, 陈锟¹, 邓伟杰¹, 汤美波¹, 郭辉³, 高攀⁴

1.中国科学院上海硅酸盐研究所, 上海 201889;
2.中国科学院大学, 北京 100049;
3.西安电子科技大学微电子学院, 西安 710071;
4.上海电机学院材料学院, 上海 201306

收稿日期:2024-03-20 修回日期:2024-04-10 出版日期:2024-04-19 网络出版日期:2024-04-19
作者简介:王浩(1999-), 男, 硕士研究生. E-mail: wanghao218@mails.ucas.ac.cn
基金资助:
国家重点研发计划项目(2021YFA0716304); 上海市科技项目(22511100300, 23DZ2201500)

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

WANG Hao^1,2, LIU Xuechao¹, ZHENG Zhong³, PAN Xiuhong¹, XU Jintao¹, ZHU Xinfeng^1,2, CHEN Kun¹, DENG Weijie¹, TANG Meibo¹, GUO Hui³, GAO Pan⁴

1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201889, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. School of Microelectronics, Xidian University, Xi’an 710071, China;
4. School of Material Science, Shanghai Dianji University, Shanghai 201306, China

Received:2024-03-20 Revised:2024-04-10 Published:2024-04-19 Online:2024-04-19
About author:WANG Hao (1999-), male, Master candidate. E-mail: wanghao218@mails.ucas.ac.cn
Supported by:
National Key R&D Program of China (2021YFA0716304); Shanghai Science and Technology Programs (22511100300, 23DZ2201500)

摘要/Abstract

摘要： 光导开关(PCSS)是在脉冲高功率系统和微波技术应用的关键开关器件。减小碳化硅(SiC)光导开关的损伤,增加器件寿命是重要的研究方向。本工作在直径4英寸、厚度500 μm的高纯半绝缘4H-SiC衬底上制备多种结构的光导开关器件,重点研究了导通电阻和损伤机制。1 kV偏压下,采用532 nm、170 mJ的脉冲激光背面照射触发经过950 ℃退火的Au/TiW/Ni电极体系的碳化硅光导开关,最小导通电阻为6.0 Ω。当激光光斑直径大于光导开关器件沟道宽度时,采用背面照射触发相较于前面照射触发可以减小导通电阻并减轻损伤。碳化硅光导开关器件在10 Hz激光下触发200 s,Au/TiW/Ni体系光导开关损伤形貌为黑色枝状烧蚀,主要原因是热载流子引起的热应力。采用400 ℃退火的硼镓共掺杂氧化锌(BGZO)薄膜替换金属Ni,黑色烧蚀得到缓解,但是在光导开关阳极出现同心圆弧损伤,同心圆弧损伤主要成因是脉冲激光的衍射和热效应的共同作用。

关键词: 碳化硅, 光导开关, 导通电阻, 失效分析

Abstract: Photoconductive semiconductor switches (PCSS) can be applied in pulsed high power systems and microwave techniques. Reducing the damage and increasing the lifetime of silicon carbide (SiC) PCSS are important research trends. PCSSs with various structures were prepared on 4-inch diameter, 500 μm thick high-purity semi-insulating 4H-SiC substrates. The on-state resistance and damage mechanisms were investigated. It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950 ℃ had a minimum on-state resistance of 6.0 Ω at 1 kV bias with a 532 nm, 170 mJ pulsed laser by backside illumination trigger. The backside trigger can reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot is larger than the channel length of PCSS. For the 200 s trigger test by a 10 Hz laser, the black branch-like ablation on Au/TiW/Ni PCSS is mainly caused by thermal stress owing to hot carriers. Replacing metal Ni with boron gallium co-doped zinc oxide (BGZO) thin films annealed at 400 ℃, black branch-like ablation was alleviated while concentric arc damage was obvious at the anode. The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Key words: silicon carbide, photoconductive switch, on-state resistance, failure analysis

中图分类号:

TN36

王浩, 刘学超, 郑重, 潘秀红, 徐锦涛, 朱新锋, 陈锟, 邓伟杰, 汤美波, 郭辉, 高攀. 非本征背照触发平面型4H-SiC光导开关性能研究[J]. 无机材料学报, DOI: 10.15541/jim20240136.

WANG Hao, LIU Xuechao, ZHENG Zhong, PAN Xiuhong, XU Jintao, ZHU Xinfeng, CHEN Kun, DENG Weijie, TANG Meibo, GUO Hui, GAO Pan. Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20240136.

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非本征背照触发平面型4H-SiC光导开关性能研究

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

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