直流反应磁控溅射沉积CuInS2薄膜的结构与电学性质

doi:10.3724/SP.J.1077.2011.01287

无机材料学报 ›› 2011, Vol. 26 ›› Issue (12): 1287-1292.DOI: 10.3724/SP.J.1077.2011.01287 CSTR: 32189.14.SP.J.1077.2011.01287

直流反应磁控溅射沉积CuInS₂薄膜的结构与电学性质

颜畅, 刘芳洋, 赖延清, 李轶, 李劼, 刘业翔

(中南大学冶金科学与工程学院, 长沙 410083)

收稿日期:2010-12-30 修回日期:2011-02-28 出版日期:2011-12-20 网络出版日期:2011-11-11
作者简介:颜畅(1987-), 男, 硕士研究生. E-mail: millor9@126.com
基金资助:
博士点基金新教师项目(200805331121); 湖南省自然科学基金(09JJ3110)

Structure and Electrical Property of CuInS₂ Thin Films Deposited by DC Reactive Magnetron Sputtering

YAN Chang, LIU Fang-Yang, LAI Yan-Qing, LI Yi, LI Jie, LIU Ye-Xiang

(School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China)

Received:2010-12-30 Revised:2011-02-28 Published:2011-12-20 Online:2011-11-11
About author:YAN Chang. E-mail: millor9@126.com
Supported by:
Research Fund of Young Scholars for the Doctoral Program of Higher Education of China (200805331121); Natural Science Foundation of Hunan Province of China (09JJ3110)

摘要/Abstract

摘要： 采用直流反应磁控溅射技术在玻璃基底上制备了太阳电池用CuInS₂薄膜. 以X射线能量色散谱仪、扫描电镜、X射线衍射仪、冷热探针和霍尔效应测试系统对薄膜进行了表征. 结果表明, 薄膜成分可通过调整Cu靶和In靶的功率比PCu/PIn来进行调控; 而薄膜形貌则取决于靶功率比和薄膜的成分. 随着PCu/PIn的增大, 薄膜物相由富铟相向CuInS₂转变. 对于CuInS₂薄膜, 提高铜铟原子比[Cu]/[In]可改善薄膜的结晶质量. 但当薄膜富铜时, 过高的[Cu]/[In]又会导致薄膜结晶质量的下降. 当CuInS₂薄膜为富铜与略微贫铜时, 其导电类型为P型; 且载流子浓度随[Cu]/[In]增加而增大, 并远高于其它贫铜薄膜. CuInS₂薄膜的载流子迁移率明显高于富铟相薄膜; 且随着[Cu]/[In]的提高, CuInS₂薄膜的载流子迁移率呈上升趋势, 而电阻率则迅速下降.

关键词: 反应磁控溅射, 铜铟硫, 太阳能电池, 电学性质, 薄膜

Abstract: CuInS₂ thin films for solar cells were prepared on the glass substrate by DC reactive magnetron sputtering technique. Produced films were characterized by EDS, SEM, XRD, hot point probe and Hall electrical measurement. The results suggest that the composition of the films are determined and controlled by the power ratio of copper target and indium target, while the morphology of thin films depends on the composition of thin films and target power ratio. As the atomic ratio [Cu]/[In] increases, the film phases transform from the In-rich phases to CuInS₂ phases. Although increasing atomic ratio [Cu]/[In] can improve the crystalline quality of CuInS₂ thin films, high [Cu]/[In] in Cu-rich thin films will lead to the declination of crystalline quality. Cu-rich or slightly Cu-poor CuInS₂ films show P-type conducting. With the increase of the atomic ratio [Cu]/[In], the carrier concentration and the carrier mobility of CuInS₂ thin film raises, but the resistivity declines sharply. It is also found that and the carrier concentration and carrier mobility of the Cu-rich CuInS₂ films are much higher than that of Cu-poor ones.

Key words: reactive magnetron sputtering, CuInS₂, solar cell, electrical property, thin film

中图分类号:

O643

颜畅, 刘芳洋, 赖延清, 李轶, 李劼, 刘业翔. 直流反应磁控溅射沉积CuInS₂薄膜的结构与电学性质[J]. 无机材料学报, 2011, 26(12): 1287-1292.

YAN Chang, LIU Fang-Yang, LAI Yan-Qing, LI Yi, LI Jie, LIU Ye-Xiang. Structure and Electrical Property of CuInS₂ Thin Films Deposited by DC Reactive Magnetron Sputtering[J]. Journal of Inorganic Materials, 2011, 26(12): 1287-1292.

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直流反应磁控溅射沉积CuInS₂薄膜的结构与电学性质

Structure and Electrical Property of CuInS₂ Thin Films Deposited by DC Reactive Magnetron Sputtering

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