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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

原位反应结合多孔Si3N4陶瓷的制备及其介电性能

夏咏锋1,2, 曾宇平1, 江东亮1

  

  1. 1. 中国科学院上海硅酸盐研究所, 上海 200050; 2. 中国科学院研究生院, 北京 100049
  • 收稿日期:2007-09-20 修回日期:2007-12-24 出版日期:2008-07-20 网络出版日期:2008-07-20

Preparation and Dielectric Properties of In Situ Reaction Bonded Porous Si3N4 Ceramics

XIA Yong-Feng1,2, ZENG Yu-Ping1, JIANG Dong-Liang1   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2007-09-20 Revised:2007-12-24 Published:2008-07-20 Online:2008-07-20

PDF (PC)

1963

被引次数

3

摘要： 以氮化硅(Si3N4)和氧化铝(Al2O3)为起始原料, 利用原位反应结合技术制备Si3N4多孔陶瓷. 研究烧结温度和保温时间对Si3N4多孔陶瓷的微观结构、力学性能以及介电性能的影响. 结果表明: 烧结温度在1350℃以下, 保温时间<4h时, 随着烧结温度的升高, 保温时间的延长, 样品的强度和介电常数增大; 但条件超出这个范围, 结果刚好相反; 物相分析表明多孔陶瓷主要由Si3N4和Al2O3以及Si3N4氧化生成的SiO2(方石英)组成. 所制备的多孔Si3N4陶瓷的气孔率范围为25.34%～48.86%, 抗弯强度为34.77～127.85MPa, 介电常数为3.0～4.6, 介电损耗约为0.002.

关键词: Si3N4多孔陶瓷, 介电性能, 反应结合, 气孔率

Abstract: Porous Si3N4 ceramics were prepared by in situ reaction-bonding technology, using Si3N4 and Al2O3 as starting materials. The effects of sintering temperature and holding time on their porosities, flexural strength, and dielectric properties were studied. The strength and dielectric constants of samples are improved with increasing of sintering temperature and holding time; but the result is reverse in the condition of sintering temperature >1350℃ and holding time >4h. The phase analyses results indicate that the porous Si3N4 ceramics are mainly composed of α-Si3N4, oxidated SiO2 (cristobalite) and Al2O3. Porous Si3N4 ceramics with porosities from 25.34% to 43.92% and flexural strength from 42.54 to 127.85MPa are obtained. Their dielectric constants are in the range from 3.3 to 4.6 and dielectric loss is about 0.005.

Key words: porous Si3N4 ceramics, dielectric properties, in situ reaction bonding, porosity

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