蓝宝石图形-多孔薄膜复合衬底生长GaN单晶研究

doi:10.15541/jim20250481

无机材料学报

• •

蓝宝石图形-多孔薄膜复合衬底生长GaN单晶研究

邵慧慧¹, 李秋波^2,3, 王守志^2,3, 王忠新^2,3, 孙德福², 蒋凯泽², 齐占国², 徐现刚², 徐明升^1,2, 张雷^2,3

1.山东大学,集成电路学院, 济南 250100;
2.山东大学新一代半导体材料研究院,晶体材料全国重点实验室, 济南 250100;
3.山东晶镓半导体有限公司,济南 250100

收稿日期:2025-12-04 修回日期:2026-01-22
作者简介:邵慧慧(1985-),女, 博士研究生. E-mail: shaohuihui0901@sdu.edu.cn
基金资助:
国家自然科学基金(52202265, 52302004, 52502007, 62434010); 山东省泰山学者计划(tsqn202306330); 山东省自然科学基金(ZR2021MB034, ZR2022QF044, ZR2022MF229); 山东大学晶体材料全国重点实验室(KF2104)

Research on Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate

SHAO Huihui¹, LI Qiubo^2,3, WANG Shouzhi^2,3, WANG Zhongxin^2,3, SUN Defu², JIANG Kaize², QI Zhanguo², XU Xiangang², XU Mingsheng^1,2, ZHANG Lei^2,3

1. School of Integrated Circuits, Shandong University, Jinan 250100, China;
2. Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China;
3. Shandong Crystal GaN Semiconductor Co., Ltd, Jinan 250100, China

Received:2025-12-04 Revised:2026-01-22
About author:SHAO Huihui (1985-), female, PhD candidate. E-mail: shaohuihui0901@sdu.edu.cn
Supported by:
National Natural Science Foundation of China (52202265, 52302004, 52502007, 62434010); Taishan Scholars Program of Shandong Province (tsqn202306330); Natural Science Foundation of Shandong Province (ZR2021MB034, ZR2022QF044, ZR2022MF229); State Key Laboratory of Crystal Materials, Shandong University (KF2104)

摘要/Abstract

摘要： 氮化镓(GaN)及其合金材料因具有宽禁带、高载流子迁移率、高击穿电压、化学性质稳定等优点,在半导体发光二极管、激光二极管、光电探测器、高频高功率微波器件等领域具有广阔的应用前景。由于GaN与异质衬底之间存在较大的晶格失配和热失配,导致在GaN外延层中引入高密度的失配位错而降低器件的性能与寿命。解决这一问题最根本的方法就是在GaN同质衬底上进行外延生长。本研究采用金属有机化学气相沉积法首先在蓝宝石图案化衬底上生长氮化镓薄膜,然后湿法腐蚀氮化镓薄膜,制备出蓝宝石图形-多孔薄膜复合衬底,再在其上生长氮化镓单晶,自剥离得到氮化镓体块单晶,实验证明了此工艺的可行性。通过X射线衍射(XRD)、拉曼光谱、光致发光谱(PL)、阴极荧光光谱(CL)测试结果证实,在蓝宝石图形-多孔薄膜复合衬底上生长GaN单晶的质量和光学质量都有所提高。同时阐述了蓝宝石图形-多孔薄膜复合衬底上生长GaN单晶的生长机制,为生长提高自剥离GaN单晶质量提供了新的思路。

关键词: 图形, 多孔, 复合, GaN

Abstract: Due to the large lattice mismatch and thermal mismatch between gallium nitride (GaN) and hetero-substrates, high-density mismatch dislocations are introduced in the GaN epitaxial layer, thereby reducing the performance and lifetime of the devices. The most fundamental solution to this problem is to grow GaN on GaN homo-substrate. In this paper, GaN films were first grown on a patterned sapphire substrate using metal-organic chemical vapor deposition method. Then, the GaN films were wet-etched to fabricate a sapphire patterned-porous film composite substrate. Subsequently, GaN single crystals were grown on this substrate, and GaN bulk single crystals were obtained by self-peeling. The feasibility of this process was experimentally verified. The test results of X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy (PL), and cathodoluminescence spectroscopy (CL) confirm that the crystalline and quality of grown GaN single crystals were improved. At the same time, the growth mechanism of GaN single crystals on the sapphire patterned-porous thin film composite substrate is expounded, providing a new idea for improving the quality of self-stripping GaN single crystals.

Key words: pattern, porous, composite, GaN

中图分类号:

TQ174

邵慧慧, 李秋波, 王守志, 王忠新, 孙德福, 蒋凯泽, 齐占国, 徐现刚, 徐明升, 张雷. 蓝宝石图形-多孔薄膜复合衬底生长GaN单晶研究[J]. 无机材料学报, DOI: 10.15541/jim20250481.

SHAO Huihui, LI Qiubo, WANG Shouzhi, WANG Zhongxin, SUN Defu, JIANG Kaize, QI Zhanguo, XU Xiangang, XU Mingsheng, ZHANG Lei. Research on Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250481.

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蓝宝石图形-多孔薄膜复合衬底生长GaN单晶研究

Research on Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate

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