蓝宝石图形-多孔薄膜复合衬底生长GaN单晶

doi:10.15541/jim20250481

无机材料学报 ›› 2026, Vol. 41 ›› Issue (8): 1141-1147.DOI: 10.15541/jim20250481

蓝宝石图形-多孔薄膜复合衬底生长GaN单晶

邵慧慧¹(), 李秋波²^,³, 王守志²^,³, 王忠新²^,³, 孙德福², 蒋凯泽², 齐占国², 徐现刚², 徐明升¹^,²(), 张雷²^,³()

¹ 山东大学集成电路学院, 济南 250100
² 山东大学晶体材料全国重点实验室，新一代半导体材料研究院, 济南 250100
³ 山东晶镓半导体有限公司, 济南 250100

收稿日期:2025-12-04 修回日期:2026-01-22 出版日期:2026-08-20 网络出版日期:2026-03-18
通讯作者: 张雷, 教授. E-mail: leizhang528@sdu.edu.cn;
徐明升, 教授. E-mail: xums@sdu.edu.cn
作者简介:邵慧慧(1985-), 女, 博士研究生. E-mail: shaohuihui0901@sdu.edu.cn

Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate

SHAO Huihui¹(), LI Qiubo²^,³, WANG Shouzhi²^,³, WANG Zhongxin²^,³, SUN Defu², JIANG Kaize², QI Zhanguo², XU Xiangang², XU Mingsheng¹^,²(), ZHANG Lei²^,³()

¹ School of Integrated Circuits, Shandong University, Jinan 250100, China
² State Key Lab of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
³ Shandong Crystal GaN Semiconductor Co., Ltd., Jinan 250100, China

Received:2025-12-04 Revised:2026-01-22 Published:2026-08-20 Online:2026-03-18
Contact: ZHANG Lei, professor. E-mail: leizhang528@sdu.edu.cn;
XU Mingsheng, professor. E-mail: xums@sdu.edu.cn
About author:SHAO Huihui (1985-), female, PhD candidate. E-mail: shaohuihui0901@sdu.edu.cn
Supported by:
National Natural Science Foundation of China(52202265);National Natural Science Foundation of China(52302004);National Natural Science Foundation of China(52502007);National Natural Science Foundation of China(62434010);Taishan Scholars Program of Shandong Province(tsqn202306330);Natural Science Foundation of Shandong Province(ZR2021MB034);Natural Science Foundation of Shandong Province(ZR2022QF044);Natural Science Foundation of Shandong Province(ZR2022MF229);State Key Laboratory of Crystal Materials, Shandong University(KF2104)

摘要/Abstract

摘要：

氮化镓(GaN)及其合金材料因具有宽禁带、高载流子迁移率、高击穿电压、化学性质稳定等优点, 在半导体发光二极管、激光二极管、光电探测器、高频高功率微波器件等领域具有广阔的应用前景。由于GaN与异质衬底之间存在较大的晶格失配和热失配, 在GaN外延层中引入高密度的失配位错会降低器件的性能与寿命。解决这一问题最根本的方法就是在GaN同质衬底上进行外延生长。本研究采用金属有机化学气相沉积法首先在蓝宝石图案化衬底上生长GaN薄膜, 然后经过湿法腐蚀, 制备出蓝宝石图形-多孔薄膜复合衬底, 再在其上生长GaN单晶, 自剥离得到GaN体块单晶, 实验证明了此工艺的可行性。X射线衍射(XRD)、拉曼光谱、光致发光(PL)光谱、阴极荧光(CL)光谱测试结果证实, 在蓝宝石图形-多孔薄膜复合衬底上生长GaN单晶的质量和光学质量都有所提高。同时, 阐述了蓝宝石图形-多孔薄膜复合衬底上生长GaN单晶的生长机制, 为生长高质量自剥离GaN单晶提供了新的思路。

关键词: 蓝宝石图形, 多孔, 复合衬底, GaN

Abstract:

Due to the large lattice mismatch and thermal mismatch between gallium nitride (GaN) and hetero-substrates, high-density mismatch dislocations are introduced in the GaN epitaxial layer, thereby reducing the performance and lifetime of the devices. The most fundamental solution to this problem is to grow GaN on GaN homo-substrate. In this study, GaN films were first grown on a patterned sapphire substrate using metal-organic chemical vapor deposition method. Then, the GaN films were wet-etched to fabricate a sapphire patterned-porous film composite substrate. Subsequently, GaN single crystals were grown on this substrate, and GaN bulk single crystals were obtained by self-peeling. The feasibility of this process was experimentally verified. The test results of X-ray diffraction (XRD), Raman spectroscopy, photoluminescence (PL) spectroscopy, and cathodoluminescence (CL) spectroscopy confirm that the crystallinity and quality of grown GaN single crystals were improved. At the same time, the growth mechanism of GaN single crystals on the sapphire patterned-porous thin film composite substrate is expounded, providing a new idea for improving the quality of self-stripping GaN single crystals.

Key words: sapphire pattern, porous, composite substrate, GaN

中图分类号:

TQ174

邵慧慧, 李秋波, 王守志, 王忠新, 孙德福, 蒋凯泽, 齐占国, 徐现刚, 徐明升, 张雷. 蓝宝石图形-多孔薄膜复合衬底生长GaN单晶[J]. 无机材料学报, 2026, 41(8): 1141-1147.

SHAO Huihui, LI Qiubo, WANG Shouzhi, WANG Zhongxin, SUN Defu, JIANG Kaize, QI Zhanguo, XU Xiangang, XU Mingsheng, ZHANG Lei. Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate[J]. Journal of Inorganic Materials, 2026, 41(8): 1141-1147.

图/表 7

Fig. 1 Wet etching porous structure (a) Sapphire pattern-porous thin film composite substrate; (b) Zoomed-in view of the square box

Fig. 2 GaN crystals grown on different substrates (a) Sapphire substrate; (b) PSS; (c) Sapphire patterned-porous thin film composite substrate

Fig. 3 SEM cross-sectional images of GaN crystal grown on sapphire patterned-porous thin film composite substrate (a) Interface of sapphire and GaN growth; (b) Zoomed-in view of the interface

Fig. 4 X-ray rocking curves of the (002) and (102) planes of GaN single crystals grown on different substrates a: Sapphire substrate; b: PSS; c: Sapphire patterned-porous thin film composite substrate

Fig. 5 Raman spectra of GaN single crystals grown on different substrates a: Sapphire substrate; b: PSS; c: Sapphire patterned-porous thin film composite substrate

Fig. 6 PL spectra of GaN single crystals grown on different substrates a: Sapphire substrate; b: PSS; c: Sapphire patterned-porous thin film composite substrate

Fig. 7 CL spectra of GaN single crystals grown on different substrates (a) Sapphire substrate; (b) PSS; (c) Sapphire patterned-porous thin film composite substrate

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蓝宝石图形-多孔薄膜复合衬底生长GaN单晶

Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate

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