无机材料学报 ›› 2022, Vol. 37 ›› Issue (9): 947-953.DOI: 10.15541/jim20220101

• 研究论文 • 上一篇    下一篇

复合烧结助剂对Si3N4陶瓷力学性能和热导率的影响

付师1,2(), 杨增朝1, 李宏华1(), 王良1, 李江涛1,2()   

  1. 1.中国科学院 理化技术研究所, 低温重点实验室, 北京 100190
    2.中国科学院大学 材料与光电研究中心, 北京 100049
  • 收稿日期:2022-03-02 修回日期:2022-04-29 出版日期:2022-09-20 网络出版日期:2022-05-27
  • 通讯作者: 李江涛, 研究员. E-mail: lijiangtao@mail.ipc.ac.cn;
    李宏华, 助理研究员. E-mail: lihonghua@mail.ipc.ac.cn
  • 作者简介:付 师(1995-), 男, 博士研究生. E-mail: fushi18@mails.ucas.ac.cn
  • 基金资助:
    国家重点研发计划(2017YFB0310303);国家自然科学基金(52072381);国家自然科学基金(U1904217)

Mechanical Properties and Thermal Conductivity of Si3N4 Ceramics with Composite Sintering Additives

FU Shi1,2(), YANG Zengchao1, LI Honghua1(), WANG Liang1, LI Jiangtao1,2()   

  1. 1. Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Science, Beijing 100190, China
    2. Center of Materials Science and Optoelectronics Engineering, University of the Chinese Academy of Science, Beijing 100049, China
  • Received:2022-03-02 Revised:2022-04-29 Published:2022-09-20 Online:2022-05-27
  • Contact: LI Jiangtao, professor. E-mail: lijiangtao@mail.ipc.ac.cn;
    LI Honghua, lecturer. E-mail: lihonghua@mail.ipc.ac.cn
  • About author:FU Shi, male, PhD candidate. E-mail: fushi18@mails.ucas.ac.cn
  • Supported by:
    National Key Research and Development Program of China(2017YFB0310303);National Natural Science Foundation of China(52072381);National Natural Science Foundation of China(U1904217)

摘要:

Si3N4陶瓷因兼具优异的力学和热学性能, 成为第三代半导体陶瓷基板的首选材料之一。本研究以7种不同离子半径的稀土氧化物(RE2O3, RE=Sc、Lu、Yb、Y、Gd、Nd、La)与非氧化物(MgSiN2)作复合烧结助剂, 通过热压烧结和退火热处理制备了高强、高热导Si3N4陶瓷, 并系统研究了复合烧结助剂中RE2O3种类对Si3N4陶瓷物相组成、微结构、力学性能和热导率的影响规律。热压后Si3N4陶瓷力学性能优越, 其中添加Nd2O3-MgSiN2的样品弯曲强度达到(1115±49) MPa。退火处理后Si3N4陶瓷的热导率得到大幅提升, 呈现出随稀土离子半径减小而逐渐增大的规律, 其中添加Sc2O3-MgSiN2的样品退火后的热导率从54.7 W·m-1·K-1提升至80.7 W·m-1·K-1, 提升了47.6%。该结果表明, 相较于国际上通用的Y2O3-MgSiN2和Yb2O3-MgSiN2烧结助剂组合, Sc2O3-MgSiN2有望成为制备高强度、高热导Si3N4陶瓷的新型复合助剂。

关键词: 氮化硅, 复合烧结助剂, 退火处理, 热导率

Abstract:

Si3N4 ceramics have become one of the most promising materials for third-generation semiconductor’s ceramic substrates due to its excellent mechanical and thermal properties. In this work, seven rare earth oxides (RE2O3, RE=Sc, Lu, Yb, Y, Gd, Nd, La) and non-oxides (MgSiN2) were used as composite sintering additives to prepare Si3N4 ceramics with high strength and high thermal conductivity by hot pressing sintering and annealing. The effects of RE2O3 types in the composite additives on the phase composition, microstructure, mechanical properties, and thermal conductivity of Si3N4 ceramics were systematically studied. The mechanical properties of Si3N4 ceramics after hot pressing sintering were superior to that without hot pressing, and the bending strength of the sample with Nd2O3-MgSiN2 additive reached (1115±49) MPa. After annealing, the thermal conductivity of Si3N4 ceramics increased significantly, and gradually increased with the decrease of the rare earth ion’s radius. The thermal conductivity of the sample with Sc2O3-MgSiN2 additive increased from 54.7 W·m-1·K-1 to 80.7 W·m-1·K-1 (increased by 47.6%) after annealing. The results indicate that Sc2O3-MgSiN2 is expected to be a new composite additive for the preparation of high strength and high thermal conductivity Si3N4 ceramics as compared to the internationally accepted combination of Y2O3-MgSiN2 and Yb2O3-MgSiN2 additives.

Key words: silicon nitride, composite sintering additives, annealing, thermal conductivity

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