功率模块封装用高强度高热导率Si3N4陶瓷的研究进展

doi:10.15541/jim20230037

无机材料学报 ›› 2023, Vol. 38 ›› Issue (10): 1117-1132.DOI: 10.15541/jim20230037 CSTR: 32189.14.10.15541/jim20230037

所属专题：【结构材料】超高温结构陶瓷(202409)；【结构材料】高导热陶瓷(202409)

• 综述 • 下一篇

功率模块封装用高强度高热导率Si₃N₄陶瓷的研究进展

付师¹^,²(), 杨增朝¹(), 李江涛¹^,²()

1.中国科学院理化技术研究所, 低温重点实验室, 北京 100190
2.中国科学院大学材料与光电研究中心, 北京 100049

收稿日期:2023-01-20 修回日期:2023-04-07 出版日期:2023-10-20 网络出版日期:2023-05-24
通讯作者: 李江涛, 研究员. E-mail: lijiangtao@mail.ipc.ac.cn;
杨增朝, 高级工程师. E-mail: yangzengchao@mail.ipc.ac.cn
作者简介:付师(1995-), 男, 博士研究生. E-mail: fushi18@mails.ucas.ac.cn
基金资助:
国家重点研发计划(2022YFE0201200);国家自然科学基金(92263205)

Progress of High Strength and High Thermal Conductivity Si₃N₄ Ceramics for Power Module Packaging

FU Shi¹^,²(), YANG Zengchao¹(), LI Jiangtao¹^,²()

1. Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2023-01-20 Revised:2023-04-07 Published:2023-10-20 Online:2023-05-24
Contact: LI Jiangtao, professor. E-mail: lijiangtao@mail.ipc.ac.cn;
YANG Zengchao, senior engineer. E-mail: yangzengchao@mail.ipc.ac.cn
About author:FU Shi (1995-), male, PhD candidate. E-mail: fushi18@mails.ucas.ac.cn
Supported by:
National Key R&D Program of China(2022YFE0201200);National Natural Science Foundation of China(92263205)

摘要/Abstract

摘要：

随着以SiC和GaN为代表的第三代宽禁带半导体的崛起, 电力电子器件向高输出功率和高功率密度的方向快速发展, 对用于功率模块封装的陶瓷基板材料提出更高的性能要求。传统的Al₂O₃和AlN陶瓷由于热导率较低或力学性能较差, 均不能满足新一代功率模块封装的应用需求, 相较之下, 新发展的Si₃N₄陶瓷因兼具高强度和高热导率, 成为最具潜力的绝缘性散热基板材料。近年来, 研究人员通过筛选有效的烧结助剂体系, 并对烧结工艺进行优化, 在制备高强度高热导率Si₃N₄陶瓷方面取得一系列突破性进展。另外, 伴随覆铜Si₃N₄陶瓷基板工程应用的推进, 对其制成的基板的力、热和电学性能的评价也成为研究热点。本文从影响Si₃N₄陶瓷热导率的关键因素出发, 重点对通过烧结助剂的选择和烧结工艺的改进来提高Si₃N₄陶瓷热导率的国内外工作进行综述。此外, 首次系统总结并介绍了Si₃N₄陶瓷基板的介电击穿强度以及覆铜后性能评价研究的最新进展, 最后展望了高热导率Si₃N₄陶瓷基板的未来发展方向。

关键词: 氮化硅, 热导率, 力学性能, 烧结助剂, 烧结工艺, 综述

Abstract:

With the rise of the third-generation wide-bandgap semiconductors represented by SiC and GaN, power electronic devices are developing rapidly towards high output power and high power density, putting forward higher performance requirements on ceramic substrate materials used for power module packaging. The conventional Al₂O₃ and AlN ceramics are inadequate for the new generation of power module packaging applications due to low thermal conductivity or poor mechanical properties. In comparison, the newly developed Si₃N₄ ceramics have become the most potential insulating heat dissipation substrate materials due to its excellent mechanical properties and high thermal conductivity. In recent years, researchers have made a series of breakthroughs in the preparation of high strength and high thermal conductivity Si₃N₄ ceramics by screening effective sintering additive systems and optimizing the sintering processes. Meanwhile, as the advancement of the engineering application of coppered Si₃N₄ ceramic substrate, the evaluation of its mechanical, thermal, and electrical properties has become a research hotspot. Starting from the factors affecting thermal conductivity of Si₃N₄ ceramics, this article reviews the domestic and international research work focused on sintering aids selection and sintering processes improvement to enhance the thermal conductivity of Si₃N₄ ceramics. In addition, the latest progress in the dielectric breakdown strength of Si₃N₄ceramic substrates and the evaluation of properties after being coppered are also systematically summarized and introduced. Based on above progresses and faced challengies, the future development direction of high strength and high thermal conductivity Si₃N₄ ceramic substrates is prospected.

Key words: silicon nitride, thermal conductivity, mechanical property, sintering additives, sintering processes, review

中图分类号:

TQ174

付师, 杨增朝, 李江涛. 功率模块封装用高强度高热导率Si₃N₄陶瓷的研究进展[J]. 无机材料学报, 2023, 38(10): 1117-1132.

FU Shi, YANG Zengchao, LI Jiangtao. Progress of High Strength and High Thermal Conductivity Si₃N₄ Ceramics for Power Module Packaging[J]. Journal of Inorganic Materials, 2023, 38(10): 1117-1132.

图/表 22

图1 功率模块和金属化陶瓷基板示意图[7]

Fig. 1 Schematic diagram of power module and metallized ceramic substrate[7]

表1 Al2O3、AlN和Si3N4三种陶瓷基板材料的性能[8]

Table 1 Properties of Al2O3, AlN and Si3N4 ceramic substrate materials[8]

Material	Al₂O₃	AlN	Si₃N₄
Density/(g·cm^-3)	3.9	3.3	3.2
Elasticity modulus/GPa	370	310	320
Bending strength/MPa	300-400	220-310	600-750
Fracture toughness/(MPa·m^1/2)	3.5-4.0	3.0-3.5	6.5-7.5
Thermal expansion coefficient/ (×10^-6, K^-1)	7-8	4.6	2.7-3.4
Thermal conductivity/ (W·m^-1·K^-1)	18-24	67-150	27-54
Dielectric strength/(kV·mm^-1)	10-18	14-16	12-18
Resistivity/(Ω·m)	>10¹²	>10¹²	>10¹²
Relative permittivity	9-10	6.0-8.5	7-9

图2 (a)Si3N4覆铜基板在-40~250 ℃热循环1000次后的外观; (b)AlN覆铜基板在-40~250 ℃热循环7次后的外观; (c)Cu板分层脱落的侧视图((b)中白色圆圈内)[9]

Fig. 2 Appearance of (a) Si3N4 coppered substrate after 1000 thermal cycles of -40 to 250 ℃, (b) AlN coppered substrate after 7 cycles of -40 to 250 ℃, and (c) side view of the delaminated Cu plate indicated by white circle in (b) [9]

图3 影响Si3N4陶瓷热导率的微结构因素

Fig. 3 Microstructure factors affecting the thermal conductivity of Si3N4 ceramics

图4 晶粒尺寸对不同晶界膜厚度β-Si3N4热导率的影响规律[35]

Fig. 4 Effect of grain size on the thermal conductivity of β-Si3N4 with various grain-boundary film thicknesses[35] Grain-boundary film thickness δ=1, 10 and 50 nm. Calculations were performed using the aspect ratio at 5 and the volume fraction of grain boundary phase at 6%. ‘Para’ and ‘perp’ indicate thermal conductivity parallel and perpendicular to the hot-press direction, respectively

图5 通过调控Y2O3/SiO2比率改变β-Si3N4的热导率和晶格氧含量[18]

Fig. 5 Thermal conductivity and lattice oxygen content of β-Si3N4 changed by adjusting the ratio of Y2O3/SiO2[18]

图6 稀土氧化物烧结助剂离子半径对β-Si3N4(a)热导率、(b)热扩散系数和(c)晶格氧含量的影响[43]

Fig. 6 Relationships between ionic radii of rare-earth oxide additives and (a) thermal conductivity, (b) thermal diffusivity and (c) lattice oxygen content of β-Si3N4[43]

图7 Si3N4样品的明场TEM照片[46]

Fig. 7 Bright-field (BF) TEM images of Si3N4 samples[46] (a) Containing lattice defects (indicated by black arrows); (b) No lattice defects included

图8 不同烧结助剂体系和烧结方法制备高热导率Si3N4陶瓷的研究进展

Fig. 8 Developments of high thermal conductivity Si3N4 ceramics with different sintering additives systems and sintering methods GPS: Gas pressure sintering, HIP: Hot isostatic pressing, HP: Hot pressed, SRBSN: Sintering of reaction-bonded Si3N4, M-SRBSN: Modified sintering of reaction-bonded Si3N4, SPS: Spark plasma sintering, PLS: pressless sintering, PSRBSN: Pressure-sintered reaction-bonded Si3N4. Numbers in the chart represent relevant references

图9 Si3N4 陶瓷的(a)平均晶粒尺寸、(b)弯曲强度、(c)断裂韧性和(d)热导率随稀土离子半径的变化[79]

Fig. 9 Change of (a) average grain size, (b) bending strength, (c) fracture toughness, and (d) thermal conductivity of Si3N4 ceramics with radius of rare earth ion[79] REM: Before annealing; REMH: After annealing

图10 含Gd2O3-MgSiN2烧结助剂的Si3N4 1900 ℃烧结12 h后抛光表面的元素分布图[80]

Fig. 10 Elemental distributions of the polished surface of Si3N4 with Gd2O3-MgSiN2 additives after sintering at 1900 ℃ for 12 h[80]

图11 烧结助剂ZrH2在Si3N4陶瓷烧结中的作用机理示意图[76]

Fig. 11 Schematic diagram of the mechanism of sintering additive ZrH2 in the sintering of Si3N4 ceramics[76]

图12 添加碳对Si3N4陶瓷微结构的影响[67]

Fig. 12 Effect of carbon addition on the microstructure of Si3N4 ceramics[67] (a, b) Low-magnification images of (a) SN and (b) SNC; (c, d) High- magnification images of (c) SN and (d) SNC. SN: Carbon free; SNC: Containing carbon

图13 含Y2O3-MgO和YF3-MgF2烧结助剂Si3N4样品的β-Si3N4晶粒生长动力学研究[88]

Fig. 13 Kinetic analysis of β-Si3N4 grain growth in Si3N4 samples with Y2O3-MgO and YF3-MgF2 additives[88]

图14 不同烧结工艺制备Si3N4陶瓷热导率和(a)烧结时间和(b)晶格氧含量及其与(c)弯曲强度之间的关系[16,93,94]

Fig. 14 Relationships between thermal conductivity of Si3N4 ceramics prepared by different sintering processes and (a) sintering time, (b) lattice oxygen content and (c) flexural strength[16,93,94]

图15 四种不同埋粉方式示意图[95]

Fig. 15 Schematic diagram of the four different embedding conditions[95]

图16 不同预烧结温度对两步烧结后Si3N4微结构的影响((a)1500 ℃, (b)1525 ℃, (c)1550 ℃和(d)1600 ℃); (e)预烧结和两步烧结后Si3N4样品的相对密度; (f)两步烧结后Si3N4的热导率和弯曲强度[97]

Fig. 16 Effect of different pre-sintering temperature on the microstructure of Si3N4 after two-step sintering((a) 1500 ℃, (b) 1525 ℃, (c) 1550 ℃ and (d) 1600 ℃), (e) relative density of Si3N4 samples after pre-sintering and two-step sintering, and (f) thermal conductivity and flexural strength of Si3N4 samples after two-step sintering[97]

图17 不同烧结方法和烧结助剂制备Si3N4陶瓷的热导率、弯曲强度和断裂韧性

Fig. 17 Thermal conductivity, bending strength and fracture toughness of Si3N4 ceramics prepared by different sintering methods and additives Numbers in the chart represent relevant references

图18 基板厚度对烧结(a)1, (b)3, (c)6, (d)12, (e)24和(f)48 h的Si3N4陶瓷介电击穿强度(DBS)的影响[117]

Fig. 18 Effect of substrate thickness on the dielectric breakdown strength (DBS) of Si3N4 ceramics sintered for (a) 1, (b) 3, (c) 6, (d) 12, (e) 24, and (f) 48 h[117]

图19 β-Si3N4晶粒与晶界相/晶间玻璃薄膜(IGFs)之间界面的连接路径示意图[117]

Fig. 19 Schematic images of the connecting path for the interface between β-Si3N4 grain and grain boundary phases/ intergranular glassy films (IGFs) in the substrates which have (a) smaller and (b) larger ratio of grain size to substrate thickness[117]

表2 用于热循环测试的Si3N4陶瓷基板和AlN陶瓷基板的力学和热学性能[118]

Table 2 Mechanical and thermal properties of Si3N4 ceramic substrates and AlN ceramic substrates for thermal cycle testing[118]

Ceramic substrate (Material code)	Flexural strength/MPa	Fracture toughness/(MPa·m^1/2)	Thermal conductivity/(W·m^-1·K^-1)
Si₃N₄ (SN-1)	669±29	10.5±0.2	140
Si₃N₄(SN-2)	909±303	5.2±0.2	21
Si₃N₄ (SN-3)	977±79	5.5±0.1	-
Si₃N₄ (SN-4)	604±25	8.0±0.4	90
AlN	461±62	3.2±0.2	180

图20 SN-1覆铜基板不同热循环次数后的照片((a)10次, (b)100次, (c)200次和(d)1000次); (e)陶瓷覆铜基板剩余/起始强度比随热循环次数的变化; (f)10次热循环后Si3N4覆铜基板的剩余强度/初始强度比与断裂韧性的关系[118]

Fig. 20 Images of the SN-1 coppered substrate after different thermal cycles ((a) 10 cycles, (b) 100 cycles, (c) 200 cycles, and (d) 1000 cycles), (e) plots of residual to initial strength ratio vs. thermal cycle number of the coppered substrates, and (f) relationship between residual to initial strength ratio and fracture toughness of the Si3N4 coppered substrates after 10 cycles[118]

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功率模块封装用高强度高热导率Si₃N₄陶瓷的研究进展

Progress of High Strength and High Thermal Conductivity Si₃N₄ Ceramics for Power Module Packaging

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