碳化硅纳米线增强多孔碳化硅陶瓷基复合材料的制备

doi:10.15541/jim20210230

无机材料学报 ›› 2022, Vol. 37 ›› Issue (4): 459-466.DOI: 10.15541/jim20210230

所属专题：【结构材料】陶瓷基复合材料

碳化硅纳米线增强多孔碳化硅陶瓷基复合材料的制备

阮景¹^,²^,³(), 杨金山¹^,²(), 闫静怡¹^,²^,⁴, 游潇¹^,²^,⁴, 王萌萌¹^,²^,⁴, 胡建宝¹^,², 张翔宇¹^,², 丁玉生¹^,², 董绍明¹^,²^,⁵()

1.中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室, 上海 200050
2.中国科学院上海硅酸盐研究所结构陶瓷及复合材料工程研究中心, 上海 201899
3.上海科技大学物质学院, 上海 201210
4.中国科学院大学, 北京 100039
5.中国科学院大学材料科学与光电工程中心, 北京 100049

收稿日期:2021-04-07 修回日期:2021-06-27 出版日期:2022-04-20 网络出版日期:2021-06-30
通讯作者: 杨金山, 研究员. E-mail: jyang@mail.sic.ac.cn;
董绍明, 研究员. E-mail: smdong@mail.sic.ac.cn
作者简介:阮景(1993–), 男, 博士研究生. E-mail: ruanjing@shanghaitech.edu.cn

Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity

RUAN Jing¹^,²^,³(), YANG Jinshan¹^,²(), YAN Jingyi¹^,²^,⁴, YOU Xiao¹^,²^,⁴, WANG Mengmeng¹^,²^,⁴, HU Jianbao¹^,², ZHANG Xiangyu¹^,², DING Yusheng¹^,², DONG Shaoming¹^,²^,⁵()

1. State Key Laboratory of High Performance Ceramics & Superﬁne Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
3. ShanghaiTech University, Material College, Shanghai 201210, China
4. University of Chinese Academy of Sciences, Beijing 100039, China
5. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-04-07 Revised:2021-06-27 Published:2022-04-20 Online:2021-06-30
Contact: YANG Jinshan, professor. E-mail: jyang@mail.sic.ac.cn;
DONG Shaoming, professor. E-mail: smdong@.sic.ac.cn
About author:RUAN Jing (1993–), male, PhD candidate. E-mail: ruanjing@shanghaitech.edu.cn
Supported by:
National Natural Science Foundation to china(51772310);Chinese Academy of Sciences Key Research Program of Frontier Sciences(QYZDY-SSWJSC031);Innovation Academy for Light-duty Gas Turbine, Chinese Academy of Sciences(CXYJJ20-MS-02)

摘要/Abstract

摘要：

构建多孔碳化硅纳米线(SiCNWs)网络并控制化学气相渗透(CVI)过程,可设计并获得轻质、高强度和低导热率SiC复合材料。首先将SiCNWs和聚乙烯醇(PVA)混合,制备具有最佳体积分数(15.6%)和均匀孔隙结构的SiCNWs网络;通过控制CVI参数获得具有小而均匀孔隙结构的SiCNWs增强多孔SiC(SiCNWs/SiC)陶瓷基复合材料。SiC基体形貌受沉积参数(如温度和反应气体浓度)的影响,从球状颗粒向六棱锥颗粒形状转变。SiCNWs/SiC陶瓷基复合材料的孔隙率为38.9%时,强度达到(194.3±21.3) MPa,导热系数为(1.9 ± 0.1) W/(m∙K),显示出增韧效果,并具有低导热系数。

关键词: SiC基复合材料, 碳化硅纳米线, CVI参数, 孔隙率, 热导率

Abstract:

Porous design of SiC composites with lightweight, high strength and low thermal conductivity can be obtained by constructing porous silicon carbide nanowires (SiCNWs) network and controlling chemical vapor infiltration (CVI) process. The SiCNWs network with an optimized volume fraction (15.6%) and uniform pore structure was prepared by mixing SiCNWs and polyvinyl alcohol (PVA) firstly. SiCNWs reinforced porous SiC ceramic matrix composite (SiCNWs/SiC) with a small uniform pore can be obtained by controlling the CVI parameters. The morphology of the grown SiC matrix, from the spherical particles to the hexagonal pyramid particles, can be influenced by the CVI parameters, such as temperature and reactive gas concentration. The strength of the SiCNWs/SiC ceramic matrix composites reaches (194.3±21.3) MPa with a porosity of 38.9% and thermal conductivity of (1.9± 0.1) W/(m·K), which shows the toughening effect and low thermal conductivity design.

Key words: SiC ceramic matrix composite, silicon carbide nanowire, CVI parameter, porosity, thermal conductivity

中图分类号:

TQ174

阮景, 杨金山, 闫静怡, 游潇, 王萌萌, 胡建宝, 张翔宇, 丁玉生, 董绍明. 碳化硅纳米线增强多孔碳化硅陶瓷基复合材料的制备[J]. 无机材料学报, 2022, 37(4): 459-466.

RUAN Jing, YANG Jinshan, YAN Jingyi, YOU Xiao, WANG Mengmeng, HU Jianbao, ZHANG Xiangyu, DING Yusheng, DONG Shaoming. Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity[J]. Journal of Inorganic Materials, 2022, 37(4): 459-466.

图/表 8

Fig. 1 Surface morphologies of the SiCNWs/PVA film (a), SiCNWs network without PyC and SiC deposition (b), surface morphologies of sample without (c) and with (d) PyC interphase after short time CVI process, and without (e) and with (f) PyC interphase after a long time CVI process

Fig. 2 Growth morphology of SiC matrix CVI deposited at temperatures of (a) 950 ℃, (b) 1030 ℃, and (c) 1100 ℃

Fig. 3 SEM images of the prepared SiCNWs/SiC ceramic matrix composites (a) External surface view of the sample under 8 h CVI process at 1030 ℃; (b) Fracture surface view and (c) corresponding enlarged region of the sample under 8 h CVI process at 1030 ℃; (d) External surface view of the sample under 8 h CVI process at 1100 ℃; (e) Fracture surface view and (f) corresponding enlarged region of the sample under 8 h CVI process at 1100 ℃

Fig. 4 Cumulative pore volume distribution with different pore size

Fig. 5 Changes of strength and thermal conductivity with porosity of porous SiCNWs/SiC ceramic matrix composite

Table 1 Strength and thermal conductivity of different materials

Materials	Porosity/%	Strength /MPa	Thermal conductivity/(W·m^-1·K^-1)	Ref.
Porous SiC-SiO₂ ceramic	~72	~2.7	0.066	[37]
Sc-doped porous SiC ceramic	~61%	10.5	7.700	[38]
Porous Al₂O₃-SiC	~38	28.0	-	[39]
Porous ZrB₂-SiC ceramics	~59%	~78.0	-	[40]
Porous SiC ceramic	~40%	~10.7	0.580	[41]
Porous SiCNWs/SiC ceramic matrix composite	~39%	~194.3	1.900	This work
Porous SiCNWs/SiC ceramic matrix composite	~62%	~49.0	1.600	This work

Fig. 6 Biaxial bending strength of the SiCNWs/SiC ceramic matrix composite with or without PyC interphase

Fig. 7 Fracture morphologies of the SiCNWs/SiC ceramic matrix composite (a) Without interphase; (b) With PyC interphase

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碳化硅纳米线增强多孔碳化硅陶瓷基复合材料的制备

Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity

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