SnO2退火温度对钙钛矿太阳能电池性能的影响

doi:10.15541/jim20190650

摘要/Abstract

摘要：

电子传输层是钙钛矿太阳能电池的关键部分, 起到阻挡空穴、传输电子和减少电子空穴复合的作用。本研究采用低温溶液法制备SnO₂薄膜作为钙钛矿电池的电子传输层, 研究SnO₂的退火温度对电子传输层微观形貌、物理性能以及钙钛矿太阳能电池性能的影响。结果表明: 当退火温度为60、90、120和240 ℃时, SnO₂薄膜表面存在较多的孔隙; 而退火温度为150、180和210 ℃时, 薄膜表面孔隙较少。在实验温度下, 制备的SnO₂薄膜为四方相, FTO玻璃上涂覆SnO₂薄膜后其透过率要优于空白FTO玻璃的透过率。当SnO₂退火温度为180 ℃时, 薄膜的电子迁移率最高, 钙钛矿电池具有最佳的传输电阻和复合电阻, 所得电池的性能最优, 其光电转换效率为17.28%, 开路电压为1.09 V, 短路电流为20.91 mA/cm², 填充因子为75.91%。

关键词: 钙钛矿太阳能电池, 电子传输层, SnO₂, 退火温度

Abstract:

Electron transport layer is a key part for perovskite solar cell (PSC), which can block holes and transmit electrons to reduce recombination. In this study, SnO₂ was synthesized with low-temperature solution-processed method and used as electronic transport layer for perovskite solar cells. The influence of annealing temperature on the properties of SnO₂ films and PSCs were systematically studied. The results showed that with the annealing temperatures at 60, 90, 120, 240 ℃, the surfaces of SnO₂ films own more pores; while annealed at 150, 180, 210 ℃, the corresponding surfaces show fewer pores. It was found that the transmittance of FTO glass covered with SnO₂ films is better than that of the bare FTO glass. With SnO₂ annealed at 180 ℃, the electron mobility of the thin film is the highest. The corresponding PSC possesses the best transmission resistance, composite resistance, and superior photovoltaic performance. The photoelectric conversion efficiency, the open-circuit voltage, the short-circuit current and the filling factor were 17.28%, 1.09 V, 20.91 mA/cm² and 75.91%, respectively.

Key words: perovskite solar cell, electronic transport layer, SnO₂, annealing temperature

中图分类号:

TQ174

王艳香, 高培养, 范学运, 李家科, 郭平春, 黄丽群, 孙健. SnO₂退火温度对钙钛矿太阳能电池性能的影响[J]. 无机材料学报, 2021, 36(2): 168-174.

WANG Yanxiang, GAO Peiyang, FAN Xueyun, LI Jiake, GUO Pingchun, HUANG Liqun, SUN Jian. Effect of SnO₂ Annealing Temperature on the Performance of Perovskite Solar Cells[J]. Journal of Inorganic Materials, 2021, 36(2): 168-174.

图/表 14

图1 FTO和不同退火温度制得的SnO2薄膜的FSEM照片

Fig. 1 FSEM images of FTO and SnO2 films annealed at different temperatures (a, j) Bare FTO; (b) 60 ℃; (c) 90 ℃; (d) 120 ℃; (e) 150 ℃; (f, i) 180 ℃; (g) 210 ℃; (h) 240 ℃

图 S1 不同退火温度制得的SnO2薄膜的AFM图像(20 μm×20 μm)

Fig. 8 AFM images of SnO2 films prepared at different annealing temperatures (20 μm×20 μm) (a) 60 ℃; (b) 90 ℃; (c) 120 ℃; (d) 150 ℃; (e) 180 ℃; (f) 210 ℃; (g) 240 ℃

图S2 不同退火温度下获得的SnO2薄膜的XRD图谱

Fig.9 XRD patterns of SnO2 films prepared at different annealing temperatures

图2 以FTO为基底180 ℃退火制得的SnO2薄膜的XPS图谱

Fig. 2 XPS spectra of SnO2 film annealed at 180 ℃ with FTO as substrate (a) Full survey; (b) Sn3d; (c) O1s; (d) Cl2p

图3 以FTO为基底不同退火温度下获得的SnO2薄膜的紫外-可见吸收光谱图(彩色曲线见电子版)

Fig. 3 UV-visible absorption spectra of SnO2 films annealed at different temperatures with FTO as substrate (Colourful curves are available on web)

表S1 不同退火温度下SnO2薄膜的带隙

Table 1 Bandgap of SnO2 films annealed at different temperatures

Temperature/℃	60	90	120	150	180	210	240
Band gap/eV	3.88	3.87	3.88	3.91	3.90	3.88	3.88

表1 以不同退火温度制得的SnO2薄膜为ETL的PSC的光电性能参数

Table 1 Photoelectric parameters of PSCs with SnO2 ETLs annealed at different temperatures

Temperature/℃	V_OC/V	J_SC/(mA∙cm^-2)	FF/%	PCE/%
60	0.87	18.85	40.75	6.72
90	0.90	19.15	55.70	9.60
120	0.97	19.56	71.67	13.60
150	1.06	19.65	74.36	15.48
180	1.09	20.91	75.91	17.28
210	1.06	19.27	73.32	14.91
240	0.99	19.23	70.75	13.43

图4 以180 ℃退火温度制得的SnO2薄膜为ETL的PSC的断面FSEM照片

Fig. 4 Cross-sectional FSEM image of PSC with SnO2 ETL annealed at 180 ℃

图5 以不同退火温度制得的SnO2薄膜为ETL的PSC的(a) J-V曲线, (b) PCE分布直方图, (c) IPCE曲线; (d) 以180 ℃退火温度制得的SnO2薄膜为ETL的PSC的IPCE及积分电流曲线(彩色曲线见电子版)

Fig. 5 (a) J-V curves, (b) PCE histograms, (c) IPCE spectra of PSCs prepared with SnO2 ETLs annealed at different temperatures; (d) IPCE and integral current curves of PSC with SnO2 ETL annealed at 180 ℃ (Colourful curves are available on web)

图6 以不同退火温度制得的SnO2为ETL的钙钛矿薄膜的光致发光图谱

Fig. 6 PL spectra of perovskite films prepared with SnO2 ETL annealed at different temperatures

图S3 退火温度为60和90 ℃制得的SnO2为ETL的钙钛矿薄膜的瞬态荧光光谱

Fig. 10 TRPL spectra of perovskite films prepared with SnO2 ETLs annealed at 60 and 90 ℃

图7 以不同退火温度制得的SnO2薄膜为ETL的PSC的电化学阻抗谱图

Fig. 7 Nyquist plots of PSCs prepared with SnO2 ETLs annealed at different temperatures

图S4 以不同退火温度制得的SnO2薄膜为ETL的PSC的(a)电化学阻抗谱局部放大图和(b)等效电路图

Fig. 11 (a) Zoom-in high-frequency region of Nyquist plot and (b) equivalent circuit for PSCs with SnO2 ETLs annealed at different temperatures

表2 以FTO为基底在不同退火温度下制得的SnO2薄膜的电学性能参数

Table 2 Electrical properties of SnO2 films annealed at different temperatures with FTO as substrate

Temperature/℃	Resistivity/ (×10^-4, Ω∙cm)	Carrier mobility/ (cm²∙V^-1·s^-1)
60	1.40	23.11
90	1.74	25.60
120	1.80	33.98
150	1.24	45.26
180	1.46	57.89
210	1.64	39.81
240	1.38	26.21

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SnO₂退火温度对钙钛矿太阳能电池性能的影响

Effect of SnO₂ Annealing Temperature on the Performance of Perovskite Solar Cells

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