Journal of Inorganic Materials ›› 2026, Vol. 41 ›› Issue (10): 1453-1458.DOI: 10.15541/jim20250521

• RESEARCH ARTICLE • Previous Articles     Next Articles

Scattering Particles in Bi12SiO20 Crystals Grown by the Vertical Bridgman Method

YU Yanqiang1,2(), XIONG Wei2(), CHEN Liang2, ZHOU Yao2, LI Ying1(), YUAN Hui2   

  1. 1 School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
    2 State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2025-12-31 Revised:2026-01-29 Published:2026-10-20 Online:2026-04-03
  • Contact: XIONG Wei, associate professor. E-mail: xiongwei@mail.sic.ac.cn;
    LI Ying, associate professor. E-mail: liying@usst.edu.cn
  • About author:YU Yanqiang (1997-), male, Master candidate. E-mail: yuyanqiang2023@163.com
  • Supported by:
    National Natural Science Foundation of China(12375187);National Natural Science Foundation of China(52573302)

Abstract:

Bismuth silicon oxide (Bi12SiO20, BSO) crystal is a wide-bandgap, high-resistivity and non-ferroelectric cubic semi-insulator. Due to its linear electro-optic effect, photoconductive properties, piezoelectric performance, and photorefractive effect, it exhibits broad applications in various optoelectronic fields. However, the scattering particles generated from the Bridgman crystal growth have seriously limited its practical applications. This study focuses on the scattering particles in BSO crystals grown via the vertical Bridgman method. The morphology, size, spatial distribution, and chemical composition of the scattering particles by transmission polarizing microscopy (TPM), scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) were systematically analyzed. Combining thermodynamic and kinetic processes of crystal growth, the formation mechanism of these scattering particles was also discussed. Results indicate that the scattering particles are primarily composed of metallic platinum (Pt), originating from corrosion of the platinum crucible by the high-temperature melt. These particles exist as linear defects exhibiting a rod-like to H-shaped transitional morphology, where the H-shaped defects display a continuous peak-valley zigzag fine structure along their longitudinal profile. Their formation correlates with the crystal growth environment, showing predominant distribution in the central region of the wafer, while the orientation of the scattering particles aligns closely with the [100] crystal growth direction. Based on this work, the optimized growth parameters are proposed, including strict control of the raw material stoichiometry and reduction of the melt temperature, to suppress the incorporation of platinum. This work provides a practical foundation for producing large-size BSO crystals with low platinum-scattering defect density and high optical homogeneity.

Key words: Bi12SiO20 crystal, vertical Bridgman method, scattering particle, crystal growth

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