Scattering Particles in Bi12SiO20 Crystals Grown by the Vertical Bridgman Method

doi:10.15541/jim20250521

Abstract

Abstract:

Bismuth silicon oxide (Bi₁₂SiO₂₀, BSO) crystal is a wide-bandgap, high-resistivity and non-ferroelectric cubic semi-insulator. Due to its linear electro-optic effect, photoconductive properties, piezoelectric performance, and photorefractive effect, it exhibits broad applications in various optoelectronic fields. However, the scattering particles generated from the Bridgman crystal growth have seriously limited its practical applications. This study focuses on the scattering particles in BSO crystals grown via the vertical Bridgman method. The morphology, size, spatial distribution, and chemical composition of the scattering particles by transmission polarizing microscopy (TPM), scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) were systematically analyzed. Combining thermodynamic and kinetic processes of crystal growth, the formation mechanism of these scattering particles was also discussed. Results indicate that the scattering particles are primarily composed of metallic platinum (Pt), originating from corrosion of the platinum crucible by the high-temperature melt. These particles exist as linear defects exhibiting a rod-like to H-shaped transitional morphology, where the H-shaped defects display a continuous peak-valley zigzag fine structure along their longitudinal profile. Their formation correlates with the crystal growth environment, showing predominant distribution in the central region of the wafer, while the orientation of the scattering particles aligns closely with the [100] crystal growth direction. Based on this work, the optimized growth parameters are proposed, including strict control of the raw material stoichiometry and reduction of the melt temperature, to suppress the incorporation of platinum. This work provides a practical foundation for producing large-size BSO crystals with low platinum-scattering defect density and high optical homogeneity.

Key words: Bi₁₂SiO₂₀ crystal, vertical Bridgman method, scattering particle, crystal growth

CLC Number:

TQ174

YU Yanqiang, XIONG Wei, CHEN Liang, ZHOU Yao, LI Ying, YUAN Hui. Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method[J]. Journal of Inorganic Materials, 2026, 41(10): 1453-1458.

Figures/Tables 9

Fig. 1 Scattering particles observed under intense light and transmission test areas

Fig. 2 Transmission spectra of the labeled areas in Fig. 1 Colorful figure is available on website

Fig. 3 Gaussian fitting curve of the angle distribution between the scattering particle orientation and the crystal growth direction [100]

Fig. 4 Schematic diagram of the spatial position distribution of scattering particles in BSO crystal (a) Angle with the growth direction [100]; (b) Distribution in the x-y plane

Fig. 5 TPM and SEM images of scattering particles in BSO crystal before corrosion (a, c) Scattering particles on the A-side of the crystal; (b, d) Scattering particles on the B-side of the crystal

Fig. 6 SEM images of scattering particles in BSO crystal after 2 h HNO3 etching (a) Scattering particles on the A-side of the crystal; (b) Scattering particles on the B-side of the crystal

Fig. 7 SEM images of scattering particles in BSO crystal after 6 h HNO3 etching (a) Transition between cylindrical and H-shaped particles; (b-d) H-shaped scattering particles in the BSO crystal

Fig. 8 SEM images (a, d) and EDS spectra (b, c, e, f) of scattering particles in BSO crystal

Table 1 SEM-EDS component analysis of the scattering particles in BSO crystal

Spectrum	Pt/% (in atomic)	Bi/% (in atomic)	Si/% (in atomic)	O/% (in atomic)
1	85.39	-	-	14.61
3	-	48.12	3.09	48.79
18	92.54	-	-	7.46
19	-	43.56	3.26	53.19

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Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method

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