Scattering Particles in Bi12SiO20 Crystals Grown by the Vertical Bridgman Method

doi:10.15541/jim20250521

Abstract

Abstract: Bismuth silicon oxide (Bi₁₂SiO₂₀, BSO) crystal is a wide-bandgap, high-resistivity and non-ferroelectric cubic semi-insulator. Due to its linear electro-optic effect, photoconductive properties, piezoelectric performance, and photorefractive effect, it exhibits broad applications in various optoelectronic fields. However, the scattering particles generated from the Bridgman crystal growth, have seriously limited its practical applications. This study focuses on the scattering particles in BSO crystals grown via the vertical Bridgman method. We systematically analyzed the morphology, size, spatial distribution, and chemical composition of the scattering particles by transmission polarizing microscopy (TPM), scanning electron microscope (SEM) with energy dispersive spectroscopy (EDS). Combining thermodynamic and the kinetic processes of crystal growth, the formation mechanism of these scattering particles was also discussed. Results indicate that the scattering particles are primarily composed of metallic platinum (Pt), originating from corrosion of the platinum crucible by the high-temperature melt. These particles exist as linear defects exhibiting a rod-like to H-shaped transitional morphology, where the H-shaped defects display a continuous peak-valley zigzag fine structure along their longitudinal profile. Their formation correlates with the crystal growth environment, showing predominant distribution in the central region of the wafer, while the orientation of the scattering particles aligns closely with the [100] crystal growth direction. Based on the study of this work, we propose optimized growth parameters, including strict control of the raw material stoichiometry and reduction of the melt temperature, to suppress the incorporation of platinum. This work provides a practical foundation for producing large-size BSO crystals with low platinum-scattering defect density and high optical homogeneity.

Key words: Bi₁₂SiO₂₀crystal, vertical Bridgman method, scattering particles, crystal growth

YU Yanqiang, XIONG Wei, CHEN Liang, ZHOU Yao, LI Ying, YUAN Hui. Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250521.

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Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method

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