Journal of Inorganic Materials ›› 2025, Vol. 40 ›› Issue (6): 704-710.DOI: 10.15541/jim20240549

• RESEARCH LETTER • Previous Articles     Next Articles

Effect of Ga3+ Doping on Crystal Structure Evolution and Microwave Dielectric Properties of SrAl2Si2O8 Ceramic

YIN Changzhi1,2(), CHENG Mingfei1,2, LEI Weicheng1,2, CAI Yiyang1,2, SONG Xiaoqiang1,2, FU Ming1,2, LÜ Wenzhong1,2, LEI Wen1,2()   

  1. 1. Key Lab of Functional Materials for Electronic Information (B) of MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
    2. Wenzhou Key Laboratory of Microwave Communication Materials and Devices, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325000, China
  • Received:2024-12-31 Revised:2025-02-26 Published:2025-06-20 Online:2025-03-06
  • Contact: LEI Wen, professor. E-mail: wenlei@mail.hust.edu.cn
  • About author:YIN Changzhi (1994-), male, PhD candidate. E-mail: ychangzhi@163.com
  • Supported by:
    National Natural Science Foundation of China(52302140);Major Scientific and Technological Innovation Project of Wenzhou(ZG2023040);Major Scientific and Technological Innovation Project of Wenzhou(ZG2023042);Joint Funds of the National Natural Science Foundation of China Key Program(U21B2068)

Abstract:

The feldspar-based microwave dielectric ceramic with low relative permittivity (εr) and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology. In this work, a series of microwave dielectric ceramic SrAl2-xGaxSi2O8 (0.1≤x≤2.0) was synthesized using the traditional solid-state method. X-ray diffraction pattern indicates that Ga3+ can be dissolved into Al3+, forming a solid solution. Meanwhile, substitution of Ga3+ for Al3+ can promote the space group transition from I2/c (0.1≤x≤1.4) to P21/a (1.6≤x≤2.0) with coefficient of thermal expansion (CTE) increasing from 2.9×10-6-1 to 5.2×10-6-1. During this substitution, the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties. Rietveld refinement results indicate that Ga3+ averagely occupied four Al3+ compositions to form solid solution. All ceramics have a dense microstructure and high relative density above 95%. An ultralow εr of 5.8 was obtained at x=1.6 composition with high quality factor (Q×f) of 50700 GHz and negative temperature coefficients of resonant frequency (τf) of approximately −35×10-6-1. The densification temperature can be reduced to 940 ℃ by adding 4% (in mass) LiF, resulting in good chemical compatibility with Ag electrode. Meanwhile, negative τf can be tuned to near-zero (+3.7×10-6-1) by adding CaTiO3 ceramic.

Key words: ion substitution, microwave dielectric ceramic, dielectric property, low-temperature co-fired ceramic

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