Journal of Inorganic Materials ›› 2021, Vol. 36 ›› Issue (1): 43-48.DOI: 10.15541/jim20200088

Special Issue: 【信息功能】电介质材料

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Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics

BAI Jiawei1,YANG Jing1(),LÜ Zhenfei1,TANG Xiaodong1,2()   

  1. 1. Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
    2. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
  • Received:2020-02-24 Revised:2020-04-27 Published:2021-01-20 Online:2020-07-21
  • About author:BAI Jiawei(1992-), male, PhD candidate. E-mail:
  • Supported by:
    National Natural Science Foundation of China(61574058);National Natural Science Foundation of China(61674058)


Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe12O19 with Ti 4+ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti 4+ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe12-xTixO19 is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti 4+ ions is low, it tends to replace Fe 3+ ions with up-spin. And the magnetization decreases with the increase of Ti dopant. However, with the further increase of Ti 4+ doping, Fe 3+ ions with down-spin is also replaced, and the saturation magnetization increases with the increase of x. The introduction of Ti 4+ ions can also make the grains to be semiconductor, which results in the Maxwell-Wagner interface polarization behavior at the interfaces between semiconducting grains and grain-boundaries. Hence, M-type hexaferrite BaFe12-xTixO19 ceramics appear obvious low frequency dielectric enhancement accompanied by a Maxwell-Wagner dielectric relaxation.

Key words: B-site doping, M-type hexaferrite, magnetic property, dielectric property

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