Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics

doi:10.15541/jim20200088

Abstract

Abstract:

Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe₁₂O₁₉with Ti ⁴⁺ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe_12-_xTi_xO₁₉ (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti ⁴⁺ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe_12-_xTi_xO₁₉ is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti ⁴⁺ ions is low, it tends to replace Fe ³⁺ ions with up-spin. And the magnetization decreases with the increase of Ti dopant. However, with the further increase of Ti ⁴⁺ doping, Fe ³⁺ ions with down-spin is also replaced, and the saturation magnetization increases with the increase of x. The introduction of Ti ⁴⁺ ions can also make the grains to be semiconductor, which results in the Maxwell-Wagner interface polarization behavior at the interfaces between semiconducting grains and grain-boundaries. Hence, M-type hexaferrite BaFe_12-_xTi_xO₁₉ ceramics appear obvious low frequency dielectric enhancement accompanied by a Maxwell-Wagner dielectric relaxation.

Key words: B-site doping, M-type hexaferrite, magnetic property, dielectric property

CLC Number:

TQ174

BAI Jiawei, YANG Jing, LÜ Zhenfei, TANG Xiaodong. Magnetic and Dielectric Properties of Ti ⁴⁺-doped M-type Hexaferrite BaFe_12-_xTi_xO₁₉ Ceramics[J]. Journal of Inorganic Materials, 2021, 36(1): 43-48.

Figures/Tables 5

Fig. 1 XRD patterns of BaFe12-xTixO19 with different Ti-doping contents

Fig. 2 SEM images of BaFe12-xTixO19 with different Ti-doping contents

Fig. 3 Hysteresis loops (a) ((b): magnified curves), relationship between x and Ms of BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) at room temperature (c)

Fig. 4 Frequency-dependent permittivity (a) and dielectric loss tangent (b) of BaFe12-xTixO19(x=0, 0.5, 1.5) at room temperature

Fig. 5 The impedance spectra of BaFe12-xTixO19 at x=0 (a) and x=1.5 (b) at 330 K with insets showing the enlarged drawing of corresponding region and the equivalent circuit model

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Magnetic and Dielectric Properties of Ti ⁴⁺-doped M-type Hexaferrite BaFe_12-_xTi_xO₁₉ Ceramics

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