Journal of Inorganic Materials

   

Crystal Structure and Terahertz Dielectric Properties of (Ti0.5W0.5)5+ Doped MgNb2O6 Ceramics

HUANG Zipeng1,2,3, JIA Wenxiao1,2,3, LI Lingxia1,2,3   

  1. 1. Tianjin University, School of Microelectronics, Tianjin 300072, China;
    2. Tianjin University, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin 300072, China;
    3. Tianjin University, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, China
  • Received:2024-12-10 Revised:2025-02-27
  • About author:HUANG Zipeng(1994-), male, PhD candidate. E-mail: hzptju613@163.com
  • Supported by:
    National Natural Science Foundation of China (52172122); National Key R&D Program of China (2023YFB3812200); Nature Science Foundation of Tianjin City (22JCQNJC00260)

Abstract: MgNb2O6 ceramics offer advantages such as moderate sintering temperature and low dielectric loss, making them widely applicable in the field of wireless communications. As 6G communication technology advances, the communication frequency is shifting from microwave to terahertz wave. The application of MgNb2O6 ceramics in terahertz communication devices can effectively reduce insertion loss, increase relative bandwidth and improve gain. However, the correlation mechanism between MgNb2O6 structure and terahertz dielectric properties remains inadequately understood. To address this gap, MgNb2-x(Ti0.5W0.5)xO6 (x=0-0.03) ceramics were prepared by solid state reaction method in this study. The crystal structure of MgNb2-x(Ti0.5W0.5)xO6 (x=0-0.03) ceramics and its correlation with terahertz dielectric properties were studied using Rietveld refinement, complex chemical bond theory, and terahertz time domain spectroscopy. , The global instability index was introduced to characterize the in-lattice strain in single-phase MgNb2O6 system, establishing a correlation among in-lattice strain, lattice energy and terahertz dielectric loss. The results show that (Ti0.5W0.5)5+ ions can modify the crystal structure. With the increase in doping amount, the internal strain reduces, the stability of crystal structure and lattice energy increase, leading to the decrease in dielectric loss. In addition, the atomic packing density increases with higher (Ti0.5W0.5)5+ ion doping, which effectively inhibits the anharmonic vibration of the crystal and further reduces the dielectric loss. At a sintering temperature of 1340 °C, MgNb2-x(Ti0.5W0.5)xO6 (x=0.03) ceramics have excellent terahertz dielectric properties, with a dielectric constant (εr) of 19.32, dielectric loss of 0.003(@0.30 THz), and an absorption coefficient of 1.64 cm-1(@0.30 THz). The MgNb2-x(Ti0.5W0.5)xO6 (x=0.03) ceramics prepared in this study has a good application prospect in terahertz devices.

Key words: MgNb2O6 ceramic, crystal structure, complex chemical bond theory, internal strain, terahertz dielectric property