Research Progress on Counter Electrodes of Quantum Dot-sensitized Solar Cells

doi:10.15541/jim20170307

Abstract

Abstract:

Quantum dots sensitized solar cells (QDSCs) play a key role in the new generation photovoltaic devices due to their low cost and easy fabrication process. The absorption spectrum of quantum dots can be tailored by controlling grain size, and multi-exaction generation. QDSCs using inorganic compound QDs replaces the dye as a sensitizer, which is able to solve the stability of the dye sensitized solar cells. However, further improvement of the conversion efficiency of QDSCs is still a major issue for their application. Recently, tailoring electronic properties of the counter electrode(CE) in QDSCs using different materials has been considered as a promising way to improve photovoltaic performance of QDSCs. This article reviewed the quite recent progress of CE in QDSCs based on synthesis method, surface microtopography and crystal structure. This review gave a panorama of metal chalcogenides, composite materials, hybrid materials, muti-component metal chalcogenides, conductive polymers, and carbon CE materials for QDSCs, while the influence of CE materials on the charge transfer impedance, the electron transport process, catalytic properties, and I-V characteristics was stressed in detail. Finally, an outlook on the future challenges and prospects of novel materials as the CE for QDSCs were also briefly put forward.

Key words: quantum dots, sensitized solar cells, counter electrode, charge transfer resistance, review

CLC Number:

O611

MENG Xiang-Dong, YIN Mo, SHU Ting, HU Yue, SUN Meng, YU Zhao-Liang, LI Hai-Bo. Research Progress on Counter Electrodes of Quantum Dot-sensitized Solar Cells[J]. Journal of Inorganic Materials, 2018, 33(5): 483-493.

Figures/Tables 11

References 79

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CE	QDs	Synthesis method	Electrolyte	R_ct/(?·cm²)	V_oc/mV	J_sc/(mA·cm^-2)	FF/%	ŋ/%
Cu₂S^[24]	CdSe	Dipping immersion	Polysulfide	2.72	590	16.04	56	5.21
PbS^[43]	CdS/ZnS	SILAR	Polysulfide	30.00	580	18.30	45	4.70
CuS^[35]	CdS	CBD	Polysulfide	1.04	570	14.58	55	4.53
CuS^[26]	CdS/CdSe	Heat-sealed method	Polysulfide	47.20	550	16.05	49	4.32
CoS₂^[46]	CdS/CdSe	Thermal sulfidation	Polysulfide	40.60	510	14.44	56	4.16
CuS^[37]	CdS/CdSe	CBD	Polysulfide	2.70	600	12.51	53	4.02
CuS^[38]	CdS, CdSe, ZnS	CBD	Polysulfide	4.40	550	13.87	51	4.01
Cu₂S^[25]	CdS&CdSe	Dipping immersion	Polysulfide	0.65	450	13.45	60	3.65
PbS^[44]	CdSe	Dipping immersion	Polysulfide	130.00	550	9.28	59	3.01
NiS^[49]	CdS, CdSe, ZnS	CBD	Polysulfide	3.16	510	10.38	55	2.97
Co_xSe^[47]	CdS	Hydrothermal	Polysulfide	2.68	650	9.29	35	2.11
FeS^[50]	CdS	Dipping immersion	Polysulfide	13.60	430	9.60	43	1.76
Mo₂S^[51]	CdS、ZnS	Hydrothermal	Polysulfide	/	480	6.22	41	1.21

CE	QDs	Synthesis method	Electrolyte	R_ct/(?·cm²)	V_oc/mV	J_sc/(mA·cm^-2)	FF/%	ŋ/%
Cu₂S^[24]	CdSe	Dipping immersion	Polysulfide	2.72	590	16.04	56	5.21
PbS^[43]	CdS/ZnS	SILAR	Polysulfide	30.00	580	18.30	45	4.70
CuS^[35]	CdS	CBD	Polysulfide	1.04	570	14.58	55	4.53
CuS^[26]	CdS/CdSe	Heat-sealed method	Polysulfide	47.20	550	16.05	49	4.32
CoS₂^[46]	CdS/CdSe	Thermal sulfidation	Polysulfide	40.60	510	14.44	56	4.16
CuS^[37]	CdS/CdSe	CBD	Polysulfide	2.70	600	12.51	53	4.02
CuS^[38]	CdS, CdSe, ZnS	CBD	Polysulfide	4.40	550	13.87	51	4.01
Cu₂S^[25]	CdS&CdSe	Dipping immersion	Polysulfide	0.65	450	13.45	60	3.65
PbS^[44]	CdSe	Dipping immersion	Polysulfide	130.00	550	9.28	59	3.01
NiS^[49]	CdS, CdSe, ZnS	CBD	Polysulfide	3.16	510	10.38	55	2.97
Co_xSe^[47]	CdS	Hydrothermal	Polysulfide	2.68	650	9.29	35	2.11
FeS^[50]	CdS	Dipping immersion	Polysulfide	13.60	430	9.60	43	1.76
Mo₂S^[51]	CdS、ZnS	Hydrothermal	Polysulfide	/	480	6.22	41	1.21

CE	QDs	Synthetic method	Electrolyte	R_ct/(?·cm²)	J_sc/mV	V_oc/(mA·cm^-2)	FF/%	ŋ/%
RGO/Cu₂S^[53]	CdSe	Spin-coating	Polysulfide	1.61	18.40	520.00	46	4.40
CuInS₂/C^[56]	CdS/CdSe	Dotor-blading	Polysulfide	18.79	14.16	512.00	60	4.32
PbS/CB^[61]	CdS/CdSe	Dotor-blading	Polysulfide	10.28	13.32	509.58	58	3.91
CuS/EC^[57]	CdS	Hydrothermal	Polysulfide	/	14.60	521.00	51	3.86
CoS/NiS^[60]	CdS/CdSe	CBD	Polysulfide	1.97	11.15	579.00	53	3.40
ZnO/PbS^[62]	CdSe	SILAR	Polysulfide	5.20	11.17	520.00	53	3.06

CE	QDs	Synthetic method	Electrolyte	R_ct/(?·cm²)	J_sc/mV	V_oc/(mA·cm^-2)	FF/%	ŋ/%
RGO/Cu₂S^[53]	CdSe	Spin-coating	Polysulfide	1.61	18.40	520.00	46	4.40
CuInS₂/C^[56]	CdS/CdSe	Dotor-blading	Polysulfide	18.79	14.16	512.00	60	4.32
PbS/CB^[61]	CdS/CdSe	Dotor-blading	Polysulfide	10.28	13.32	509.58	58	3.91
CuS/EC^[57]	CdS	Hydrothermal	Polysulfide	/	14.60	521.00	51	3.86
CoS/NiS^[60]	CdS/CdSe	CBD	Polysulfide	1.97	11.15	579.00	53	3.40
ZnO/PbS^[62]	CdSe	SILAR	Polysulfide	5.20	11.17	520.00	53	3.06

CE	QDs	Synthetic method	R_ct/(?·cm²)	V_oc/mV	J_sc/(mA·cm^-2)	FF/%	ŋ/%
AuPtNP/RGO	CdSe	Co-reduction	34.25	720	15.2	41	4.50
TiN/CNT-GR	CdSe/CdS	SILAR	14.40	642	14.0	46	4.13
TiN/CNT	CdSe/CdS		23.60	645	13.7	44	3.89
TiN-GR	CdSe/CdS		36.60	636	12.7	43	3.47
TiN	CdSe/CdS		123.00	609	6.6	20	0.80
CuS/Pt	CdS	Coated reaction method	424.00	567	8.0	50	2.27