Nb-modified Bi4Ti3O12 Piezoelectric for High Temperature Applications

doi:10.3724/SP.J.1077.2010.01169

Abstract

Abstract: Nb-modified Bi₄Ti₃O₁₂ (BIT+xmol%Nb₂O₅) layer-structured piezoelectric ceramics were prepared by the solid state reaction method (at the pressure of about 12MPa). The quantity of grain growth along a-b plane is much more than that along c-axis with the increasing amount of Nb₂O₅. After Nb₂O₅doping, the size of grain becomes small and unanimity. The electrical conductivity and dielectric loss are significantly reduced, while relative density, piezoelectric activity and electromechanical properties of Bi₄Ti₃O₁₂-based ceramics are improved by the modification of Nb₂O₅. The electrical conductivity of BIT+4.00mol% Nb₂O₅(10^-13S/cm) decreases by 2 orders of magnitude compared with the undoped one. Besides, the BIT+4.00mol% Nb2O5 ceramic exhibits optimum electrical properties: relative density r=98.7%, tanδ=0.23%, d₃₃=18pC/N, Q_m=2804, k_p=8.1%, k_t=18.6%, N_p=2227Hz·m and N_t=2025Hz·m, and the d₃₃ remains 17pC/N after annealing at 600℃, which indicates that the ceramic is a potential material for high temperature applications.

Key words: piezoelectric ceramics, microstructure, electromechanical properties, Bi₄Ti₃O₁₂

CLC Number:

TQ174

JIANG Xiang-Ping, YANG Qing, CHEN Chao, TU Na, YU Zu-Deng, LI Yue-Ming. Nb-modified Bi₄Ti₃O₁₂ Piezoelectric for High Temperature Applications[J]. Journal of Inorganic Materials, 2010, 25(11): 1169-1174.

References

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Nb-modified Bi₄Ti₃O₁₂ Piezoelectric for High Temperature Applications

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