Growth and Structure of CN films by RF-reactive Sputtering

Journal of Inorganic Materials

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Growth and Structure of CN films by RF-reactive Sputtering

YU Qingxuan; FANG Rongchuan

Department of Physics; University of Science and Technology of China Hefei 200026 China

Received:1996-07-08 Revised:1996-09-16 Published:1997-08-20 Online:1997-08-20

Abstract

Abstract: Carbon nitride thin films were deposited on Si (100) substrates using the RF-reastive sput-tering technigue. These films were characterized by transimssion electron microscopy, infrared spectroscopy, X-ray photoelectron spectra (XPS) and X-ray diffraction (XRS). It was found that the structure and morpho1ogy of the CN films varied with deposition parameters. Under optimum conditions, β-C₃N₄ phase was synthesized.

Key words: RF-reactive sputtering, carbon nitride thin films, growth, structure

YU Qingxuan,FANG Rongchuan. Growth and Structure of CN films by RF-reactive Sputtering[J]. Journal of Inorganic Materials.

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Growth and Structure of CN films by RF-reactive Sputtering

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