Structure and Properties of C-N Films Prepared by Hot Filament Assisted rf Plasma CVD

Journal of Inorganic Materials

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Structure and Properties of C-N Films Prepared by Hot Filament Assisted rf Plasma CVD

CHEN Guang-Hua^{1; 2}; WU Xian-Cheng¹; HE De-Yan¹

1. Department of Physics; Lanzhou University; Lanzhou 730000; China; 2. Department of Applied Physics; Beijing Polytechnic University） Beijing 100022; China

Received:2000-03-07 Revised:2000-06-05 Published:2001-03-20 Online:2001-03-20

Abstract

Abstract: Polycrystalline carbon nitride thin films were prepared on Si (100) by hot filament assisted rf plasma-enhanced chemical vapor deposition with negative bias methods. X-ray distraction (XRD) spectra indicate that the obtained CN films contain both crystalline β－C₃N₄ and β-C₃N₄, and a presently unknown structure. Some crystalline particles of 1-2μm in size with hexagonal cross section exist in the polycrystalline carbon nitride film. The maximum hardness of C₃N₄ thin film is 72.66GPa.

Key words: CVD, C₃N₄, XRD, SEM, Hardness

CLC Number:

O484

CHEN Guang-Hua,WU Xian-Cheng,HE De-Yan. Structure and Properties of C-N Films Prepared by Hot Filament Assisted rf Plasma CVD[J]. Journal of Inorganic Materials.

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Structure and Properties of C-N Films Prepared by Hot Filament Assisted rf Plasma CVD

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