Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (10): 1176-1182.DOI: 10.15541/jim20230096
• RESEARCH ARTICLE • Previous Articles Next Articles
MA Rundong1,2(), GUO Xiong1,2, SHI Kaixuan1,2, AN Shengli1,2, WANG Ruifen1,2(), GUO Ruihua1,2
Received:
2023-02-25
Revised:
2023-03-13
Published:
2023-10-20
Online:
2023-04-11
Contact:
WANG Ruifen, associate professor. E-mail: wrf2008@imust.edu.cnAbout author:
MA Rundong (1999-), male, Master. E-mail: 896164876@qq.com
Supported by:
CLC Number:
MA Rundong, GUO Xiong, SHI Kaixuan, AN Shengli, WANG Ruifen, GUO Ruihua. S-type Heterojunction of MOS2/g-C3N4: Construction and Photocatalysis[J]. Journal of Inorganic Materials, 2023, 38(10): 1176-1182.
Fig. 2 FE-SEM images of g-C3N4 (a), MoS2 (b) and FE-SEM images (c, d), HR-TEM images (e, f),element mapping (g) and C (h), N (i), S (j), Mo (k) mapping of 5%MGCD
Fig. 3 UV-Vis (a) spectra, Tauc curves (b), PL spectra (c), instantaneous meter photocurrents (d), and EIS (e) patterns of samples Colorful figures are available on website
Fig. 4 Degradation rate of different photocatalyst samples (a), cyclic degradation rate of 5%MGCD with time (b), XRD patterns of 5%MGCD before and after circulation experiment (c), and histogram of free radical trapping experiment (d)
Fig. 5 Energy bands diagram of heterojunction (a), construction of heterojunction of sample and bending of Fermi energy level (b), and diagram of energy band bending caused by built-in electric field (c)
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