Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic

doi:10.3724/SP.J.1077.2011.10828

Abstract

Abstract: The amorphous bulk Si-C-N ceramic was prepared by chemical vapor deposition (CVD). The thermal behaviors of as-prepared Si-C-N ceramic were investigated using TG/DSC, XRD, SEM and TEM. The phase separation firstly occurred in amorphous Si-C-N during the heat treatment, and one of separating phases appeared granular. β-SiC was formed in the granular separating phase. The amorphous Si-C-N began to crystallize at about 1200℃ when the ceramic exposed to the heat treatment. The crystallization temperature was about 1372.6℃, which was determined by DSC under the condition of continuous heating at a heating rate of 20℃/min. β-SiC was found at 1200℃, while β-Si₃N₄and α-SiC were formed at about 1500℃. A laminate-like structure appears in the heat-treated Si-C-N. This kind of structure was proved to be the highly crystallized Si-C-N.

Key words: amorphous, Si-C-N ceramic, thermal behavior, crystallization

CLC Number:

TQ174

LU Guo-Feng, QIAO Sheng-Ru, ZHANG Cheng-Yu, JIAO Geng-Sheng. Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic[J]. Journal of Inorganic Materials, 2011, 26(7): 779-784.

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