Preparation of Li-N-H Codoped p-type ZnO Films

doi:10.3724/SP.J.1077.2006.01511

Journal of Inorganic Materials

• Research Paper • Previous Articles

Preparation of Li-N-H Codoped p-type ZnO Films

LU Yang-Fan, YE Zhi-Zhen, ZENG Yu-Jia, CHEN Lan-Lan, ZHU Li-Ping, ZHAO Bing-Hui

(State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China)

Received:2006-01-06 Revised:2006-02-27 Published:2006-11-20 Online:2006-11-20

Abstract

Abstract: Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω·cm, Hall mobility of 0.5cm²/(V·s), carrier density of 4.92×10¹⁷cm^-3, and transmittance of about 90%.

Key words: p-type ZnO, magnetron sputtering, codoping

CLC Number:

TN304
O484

LU Yang-Fan,YE Zhi-Zhen,ZENG Yu-Jia,CHEN Lan-Lan,ZHU Li-Ping,ZHAO Bing-Hui. Preparation of Li-N-H Codoped p-type ZnO Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01511.

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Preparation of Li-N-H Codoped p-type ZnO Films

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