Research on Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate

doi:10.15541/jim20250481

Abstract

Abstract: Due to the large lattice mismatch and thermal mismatch between gallium nitride (GaN) and hetero-substrates, high-density mismatch dislocations are introduced in the GaN epitaxial layer, thereby reducing the performance and lifetime of the devices. The most fundamental solution to this problem is to grow GaN on GaN homo-substrate. In this paper, GaN films were first grown on a patterned sapphire substrate using metal-organic chemical vapor deposition method. Then, the GaN films were wet-etched to fabricate a sapphire patterned-porous film composite substrate. Subsequently, GaN single crystals were grown on this substrate, and GaN bulk single crystals were obtained by self-peeling. The feasibility of this process was experimentally verified. The test results of X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy (PL), and cathodoluminescence spectroscopy (CL) confirm that the crystalline and quality of grown GaN single crystals were improved. At the same time, the growth mechanism of GaN single crystals on the sapphire patterned-porous thin film composite substrate is expounded, providing a new idea for improving the quality of self-stripping GaN single crystals.

Key words: pattern, porous, composite, GaN

CLC Number:

TQ174

SHAO Huihui, LI Qiubo, WANG Shouzhi, WANG Zhongxin, SUN Defu, JIANG Kaize, QI Zhanguo, XU Xiangang, XU Mingsheng, ZHANG Lei. Research on Growth of GaN Single Crystals on Sapphire Patterned-porous Thin Film Composite Substrate[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250481.

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