Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (4): 378-386.DOI: 10.15541/jim20220699

• Topical Section on Neuromorphic Materials and Devices (Contributing Editor: WAN Qing) • Previous Articles     Next Articles

Recent Progress in Optoelectronic Artificial Synapse Devices

DU Jianyu1,2(), GE Chen2,3()   

  1. 1. School of Science, Tianjin University of Technology, Tianjin 300382, China
    2. Institute of Physics, Chinese Academy of Sciences, Beijing 100039, China
    3. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2022-11-22 Revised:2022-12-12 Published:2023-04-20 Online:2022-12-28
  • Contact: GE Chen, professor. E-mail:
  • About author:DU Jianyu (1989-), male, PhD, lecturer. E-mail:
  • Supported by:
    National Natural Science Foundation of China(12222414);National Natural Science Foundation of China(12074416);The Youth Innovation Promotion Association of CAS(2018008)


For the conventional von Neumann based vision systems, the sensing, memory, and processing units are separated. Shuttling of redundant data between separated image sensing, memory, and processing units causes a high latency and energy consumption. To break these limitations, the next-generation neuromorphic visual systems, which integrate light information sensing, memory, and processing, can reduce the data transfer, thus improving their time and energy efficiencies. As the basis of the hardware-implementing of neuromorphic visual systems, optoelectronic artificial synapse devices have been extensively investigated in recent years. By integrating the functions of synaptic devices and light-sensing elements, the optoelectronic artificial synapse devices pave the way for constructing new neuromorphic vision systems with low latency, high energy efficiency and good reliability. Many materials are widely utilized for optoelectronic artificial synapse devices, and operation mechanisms of the present optoelectronic artificial synapse devices mainly include the ionization and dissociation of oxygen vacancy, the trapping/detrapping of photogenerated carriers, the light-induced phase change, and the interaction between light and ferroelectric materials. In this short review, the recent progresses in optoelectronic artificial synapse devices are introduced from the perspectives of their operation mechanisms. Besides, advantages and challenges of the devices are analyzed from the view of operation mechanisms. Finally, the advanced prospect and research aspect of optoelectronic artificial synapse devices are outlined for the application.

Key words: optoelectronic artificial synapse, oxygen vacancy, photo-generated carrier, light-induced phase change, light-induced ferroelectric polarization reversal, review

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