Recent Progress in Optoelectronic Artificial Synapse Devices

doi:10.15541/jim20220699

Abstract

Abstract:

For the conventional von Neumann based vision systems, the sensing, memory, and processing units are separated. Shuttling of redundant data between separated image sensing, memory, and processing units causes a high latency and energy consumption. To break these limitations, the next-generation neuromorphic visual systems, which integrate light information sensing, memory, and processing, can reduce the data transfer, thus improving their time and energy efficiencies. As the basis of the hardware-implementing of neuromorphic visual systems, optoelectronic artificial synapse devices have been extensively investigated in recent years. By integrating the functions of synaptic devices and light-sensing elements, the optoelectronic artificial synapse devices pave the way for constructing new neuromorphic vision systems with low latency, high energy efficiency and good reliability. Many materials are widely utilized for optoelectronic artificial synapse devices, and operation mechanisms of the present optoelectronic artificial synapse devices mainly include the ionization and dissociation of oxygen vacancy, the trapping/detrapping of photogenerated carriers, the light-induced phase change, and the interaction between light and ferroelectric materials. In this short review, the recent progresses in optoelectronic artificial synapse devices are introduced from the perspectives of their operation mechanisms. Besides, advantages and challenges of the devices are analyzed from the view of operation mechanisms. Finally, the advanced prospect and research aspect of optoelectronic artificial synapse devices are outlined for the application.

Key words: optoelectronic artificial synapse, oxygen vacancy, photo-generated carrier, light-induced phase change, light-induced ferroelectric polarization reversal, review

CLC Number:

TQ174

DU Jianyu, GE Chen. Recent Progress in Optoelectronic Artificial Synapse Devices[J]. Journal of Inorganic Materials, 2023, 38(4): 378-386.

Figures/Tables 5

Fig. 1 Research based on the operation mechanism of ionization and dissociation of oxygen vacancy (a) Device structure, optical microscope image of an IGZO-based photonic neuromorphic device; (b) Current decaying characteristics of IGZO, ISO, ISZO, and IZO films (from top to bottom) after pulsed UV exposure; (c) Relationship between the activation energy and the relaxation time constant for various amorphous oxide semiconductors; (d) Typical photoinduced current generation and decaying characteristics of IGZO semiconductor upon UV-light exposure[21]; (e) Artificial neuromorphic system for eyesight simulation based on SnOx/IGZO; (f) Current variation and decay of IGZO, SnOx/IGZO devices after 450 nm-light pulse stimulus; (g) Schematic process of the selective memory for the moth and dragonfly image with the time (left panel), and the selective amnesia and memory processes achieved by utilizing 9 positive and negative VGS pulses[20]

Fig. 2 Research based on operation mechanism of trapping/detrapping of photogenerated carriers (a) Schematic of emulating a biological synapse by using a synaptic transistor based on the hybrid structure of Si NM and MAPbI3; (b) EPSC of a synaptic transistor triggered by an optical spike; (c) Dependence of the PPF index (defined as A2/A1) on Δt; (d) Dependence of the maximum EPSC triggered by 30 optical spikes on the backgate voltage; (e) EPSC triggered by 30 optical spikes at various backgate voltages[22]; (f) Schematic illustration of the CsPbBr3 quantum dots-based synapse devices; (g) Schematic energy diagram of the device during light programming operation and during electrical erasing operation under dark condition; (h) Transient characteristic of the synaptic device after light programming operation with fixed light intensity and wavelength varied from 365 to 660 nm; (i) Long-term potentiation (bottom panel) and long-term depressing (top panel) of the CsPbBr3 quantum dots-based synapse devices under different light illumination[25]

Fig. 3 Research based on the operation mechanism of the light-induced phase change (a) Schematic of the all-optical memory device based on GST; (b) Optical transmission data of the waveguide are encoded by switching between crystalline and amorphous phases GST; (c) Multiple repetitions of the same switching cycle[26]; (d) Schematic illustration of the neuromorphic devices based on VO2 film; (e) ID response to UV irradiation at different durations; (f) Relationship between ΔID and incident UV dose; (g) Realization of neuromorphic preprocessing function to achieve image noise reduction utilizing the sensor array, with the system being spatially divided into a convolution kernel array part for visual information preprocessing and an ANN part for image recognition; (h) Recognition accuracy with and without neuromorphic preprocessing[27]; Colorful figures are available on website

Fig. 4 Research based on the interaction between light and ferroelectric materials (a) PFM phase-maps (30 μm×30 μm) of BaTiO3 film, with PDOWN and PUP regions being written by applying voltage to the tip of −8 or +8 V, respectively, but after illumination (blue laser, 10 min) PUP domains being switched back; (b) Low-resistance state (LRS) to high-resistance state (HRS) switching promoted by optically induced polarization reversal[44]; (c) Sketch of the experiment geometry; (d) PFM phase images acquired in the dark before and after UV illumination, showing the MoS2 flake boundary by the dashed lines[43]; (e) Schematic configuration of the device and the mechanism behind the optically and electrically tunable channel conductance; (f) Long-term optical potentiation and electrical depression in the WS2/ PZT optoelectronic synapses[45]

Fig. 5 Research based on the interaction between light and ferroelectric materials[50] (a) Schematic illustration of optoelectronic synapses based on MoS2/ BaTiO3; (b) Non-volatile multi-level conductance switching under optical excitation and electrical excitation; (c) Summary of the On/Off ratio and retention time for various optoelectronic synapses reported previously; (d) PFM phase diagrams of the MoS2/ BaTiO3 heterostructure as a function of the light exposure time; (e) Preprocess of the image noise reduction utilizing the sensor array; (f) Comparisons of the recognition accuracy of the pre-prepared images

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