Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

doi:10.15541/jim20180587

Abstract

Abstract:

Due to its unique physical and chemical property, diamond is widely used in many fields such as detectors and optoelectronic devices. Many scholars’ attention is drew into single crystal diamond because of its potential to significantly increase the functionality of these devices. Presently, single crystal diamonds grown heteroepitaxially on iridium (Ir) substrates reach the largest size and an excellent growth quality. In this paper, substrates with different structures for nucleation and growth processes of epitaxial diamond are introduced. The mechanisms of diamond nucleation by Bias Enhanced Nucleation (BEN) method and growth undergoing an Epitaxial Lateral Overgrowth (ELO) process are described, including technique of Patterned Nucleation and Growth(PNG). Limitations of current study are pointed out, and the future development of heteroepitaxial theory and experiment are also forecasted in this paper.

Key words: single crystal diamond, heteroepitaxial growth, bias enhanced nucleation, epitaxial lateral overgrowth, review

CLC Number:

O782

WANG Yang, ZHU Jia-Qi, HU Zhong-Bo, DAI Bing. Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism[J]. Journal of Inorganic Materials, 2019, 34(9): 909-917.

Figures/Tables 8

Fig. 1 Heteroepitaxial diamond growth on different substrate materials[32,33,34] (a) c-BN(001); (b) c-BN(111); (c) Al2O3(0001); (d) Ni(001); (e) Ni(111); (f) Pt(111); (g) Si(001); (h) 4H-SiC(001); (i) Ir(001)

Table 1 Quality of diamond grown on different layer structures based on Ir(100) substrate

Bottom substrate	Structure	Thickness	Quality	Ref.
Metal oxide (MO)	MgO(100)/Ir(100)/diamond(100)	50 μm	tilt0.16°	[42, 47]
	SrTiO₃(100)/Ir(100)/diamond(100)	34 μm	tilt0.17° twist0.38°	[48]
	Al₂O₃(11ˉ20)/Ir(100)/diamond(100)	38 μm	tilt~0.30°	[49]
Si	Si(100)/MgO(100)/Ir(100)/diamond(100)	8 μm	tilt0.88° twist4.13°	[50]
	Si(100)/YSZ(100)/Ir(100)/diamond(100)	1.60 mm	tilt0.18° twist0.29°	[16, 51]
	Si(100)/SrTiO₃(100)/Ir(100)/diamond(100)	350 μm	tilt0.38° twist0.98°	[52]
	Si(100)/CaF₂(100)/Ir(100)/diamond(100)	-	tilt0.61°	[53]

Table 2 Experimental conditions for Bias Enhanced Nucleation (BEN) and growth of diamond on iridium[59]

	Nucleation process			Primary growth	Rapid growth
	H₂ cleaning	H₂/CH₄ stabilization	BEN	Primary growth	Rapid growth
CH₄/%	0(Pure H₂)	4	4	0.6	5
Pressure/(×10³, Pa)	2	2	2	2	20
Power/W	400	400	400	400	3000
Bias voltage/V	0	0	-307	0	0
Substrate temperature/℃	(600±50)	(650±50)	(700±50)	(600±50)	(880±30)
Duration/min	10	10	40-45	30	Up to 48 h

Fig. 2 Changes in the shape of plasma ball after application of bias voltage[57] (a) Photograph; (b) Schematic

Fig. 3 Procedure of single diamond eptaxial growth on Ir substrate[16, 60-64] (a) Preparation of substrate; (b) Bias Enhanced Nucleation (BEN) process; (c) Oriented growth; (d) Patterned growth; (e) Heteroepitaxial diamond MS: Megnetron Sputtering; PLD: Pulsed Laser Deposition; MBE: Molecular Beam Epitaxy

Fig. 4 SEM images[72] of the iridium surface after BEN treatment (a), local spots after BEN (b) and after a subsequent growth step (c)

Fig. 5 (a-g) Sequence of TEM images showing typical dynamics of the attachment process, with surfaces of particles I and II enabling transient contact at many points and orientations before finally attaching and growing together; (h) High-resolution image of interface in (g)[77]

Fig. 6 Heteroepitaxial diamond films on Ir/SrTiO3(100)[48] (a-c) TEM images; (d) Reduction in mosaic spreaded with increasing thickness

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