硼镓共掺氧化锌透明电极的制备及性能优化

doi:10.15541/jim20250273

无机材料学报 ›› 2026, Vol. 41 ›› Issue (4): 479-485.DOI: 10.15541/jim20250273 CSTR: 32189.14.10.15541/jim20250273

硼镓共掺氧化锌透明电极的制备及性能优化

蒋圣楠¹^,²(), 郑重³, 何唯一¹^,², 刘涛¹^,⁴, 潘秀红¹, 陈锟¹, 郭辉³, 高攀⁵, 刘春俊⁶, 刘学超¹()

¹ 中国科学院上海硅酸盐研究所, 功能晶体与器件全国重点实验室, 上海 201899
² 中国科学院大学材料科学与光电技术学院, 北京 100049
³ 西安电子科技大学微电子学院, 西安 710071
⁴ 上海大学微电子学院, 上海 200444
⁵ 上海电机学院材料学院, 上海 201306
⁶ 北京天科合达半导体股份有限公司, 北京 102629

收稿日期:2025-06-29 修回日期:2025-07-18 出版日期:2025-09-27 网络出版日期:2025-09-27
通讯作者: 刘学超, 研究员. E-mail: xcliu@mail.sic.ac.cn
作者简介:蒋圣楠(2001-), 男, 硕士研究生. E-mail: jiangshengnan23@mails.ucas.ac.cn
基金资助:
国家重点研发计划(2021YFA0716304);国家重点研发计划(2022YFF0504600);中国载人航天空间应用系统项目(KJZ-YY-NCL403)

Preparation and Performance Optimization of Boron-gallium Co-doped Zinc Oxide Transparent Electrodes

JIANG Shengnan¹^,²(), ZHENG Zhong³, HE Weiyi¹^,², LIU Tao¹^,⁴, PAN Xiuhong¹, CHEN Kun¹, GUO Hui³, GAO Pan⁵, LIU Chunjun⁶, LIU Xuechao¹()

¹ State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
² College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
³ School of Microelectronics, Xidian University, Xi’an 710071, China
⁴ School of Microelectronics, Shanghai University, Shanghai 200444, China
⁵ School of Materials, Shanghai Dianji University, Shanghai 201306, China
⁶ Tankeblue Semiconductor Co., Ltd., Beijing 102629, China

Received:2025-06-29 Revised:2025-07-18 Published:2025-09-27 Online:2025-09-27
Contact: LIU Xuechao, professor. E-mail: xcliu@mail.sic.ac.cn
About author:JIANG Shengnan (2001-), male, Master candidate. E-mail: jiangshengnan23@mails.ucas.ac.cn
Supported by:
National Key Research and Development Program of China(2021YFA0716304);National Key Research and Development Program of China(2022YFF0504600);Space Application System of China Manned Space Program(KJZ-YY-NCL403)

摘要/Abstract

摘要：

碳化硅(SiC)光导开关(PCSS)是一类基于超快脉冲激光调控半导体电阻率以实现导通与关断的光电器件, 在脉冲功率系统、介质壁加速器系统、超快电子学等领域具有广阔的应用前景。透明氧化物导电薄膜因其优异的透光性和导电性, 在光电器件透明电极领域具有重要应用价值。本研究采用磁控溅射法制备硼镓共掺氧化锌(Boron-gallium co-doped zinc oxide, BGZO)薄膜, 系统研究了退火温度(300~600 ℃)对薄膜结构与性能的调控规律。X射线衍射分析与霍尔效应测试结果表明, 400 ℃退火处理的薄膜呈现最优的结晶质量与光电性能, 其可见光波段透过率达93%, 电阻率低至1.40×10⁻² Ω·cm。作为应用验证, 将优化后的BGZO薄膜作为透明电极集成至SiC PCSS器件。对比实验显示, 在532 nm、170 mJ脉冲激光连续触发条件下, BGZO薄膜电极器件较传统Ni电极器件表现出更稳定的工作特性, 其界面丝状电流损伤减少, 电极边缘电场分布均匀性提升。本研究为制备高性能透明导电薄膜提供了优化方案, 并证实了其在PCSS器件中的应用优势。

关键词: 硼镓共掺氧化锌, 透明电极, 碳化硅, 光导开关

Abstract:

Silicon carbide (SiC) photoconductive semiconductor switches (PCSS) are optoelectronic devices that utilize ultrafast pulsed lasers to modulate semiconductor resistivity for switching operations. Transparent oxide conductive films, especially zinc oxide thin films, are considered as a potential alternative electrode materials to reduce the on-resistance due to their excellent optical transparency and electrical conductivity. However, zinc oxide thin films are prone to ablation damage under high-energy pulsed laser irradiation, leading to crack formation and significantly affecting the device’s lifespan. Additionally, uneven local electric field distribution in the electrodes poses challenges to the long-term stability of the device. In this study, boron-gallium co-doped zinc oxide (BGZO) thin films were prepared by magnetron sputtering, and effects of annealing temperature (300-600 ℃) on their structural and electrical properties were investigated. X-ray diffraction and Hall effect measurements revealed that these films annealed at 400 ℃ exhibited optimal crystallinity and electrical performance, achieving a visible-light transmittance of 93% and a resistivity as low as 1.40×10^-2 Ω·cm. After integrating the optimized BGZO films as transparent electrodes into SiC PCSS devices, these BGZO-based devices, under 532 nm wavelength and 170 mJ pulsed laser excitation, exhibited more stable operation than conventional Ni-based electrodes, with reduced filamentary current damage at the SiC-electrode interface and improved electric field uniformity at the electrode edges. This study provides an optimized fabrication strategy for high-performance transparent conductive films and confirms their advantages in PCSS applications.

Key words: boron-gallium co-doped zinc oxide, transparent electrode, silicon carbide, photoconductive semiconductor switch

中图分类号:

TQ174

蒋圣楠, 郑重, 何唯一, 刘涛, 潘秀红, 陈锟, 郭辉, 高攀, 刘春俊, 刘学超. 硼镓共掺氧化锌透明电极的制备及性能优化[J]. 无机材料学报, 2026, 41(4): 479-485.

JIANG Shengnan, ZHENG Zhong, HE Weiyi, LIU Tao, PAN Xiuhong, CHEN Kun, GUO Hui, GAO Pan, LIU Chunjun, LIU Xuechao. Preparation and Performance Optimization of Boron-gallium Co-doped Zinc Oxide Transparent Electrodes[J]. Journal of Inorganic Materials, 2026, 41(4): 479-485.

图/表 12

图1 SiC PCSS电极结构图

Fig. 1 Diagrams of SiC PCSS electrode components (a) Au/TiW/Ni/SiC; (b) Au/TiW/BGZO/SiC

图2 退火前和不同退火温度下BGZO薄膜的XRD图谱

Fig. 2 XRD patterns of BGZO thin films before and after annealing at different temperatures

图3 退火前和不同退火温度下BGZO薄膜的EDS测试结果

Fig. 3 EDS test results of BGZO thin films before and after annealing at different temperatures (a) As-dep.; (b) 300 ℃; (c) 400 ℃; (d) 500 ℃; (e) 600 ℃

图4 退火前和不同退火温度下BGZO薄膜的SEM照片

Fig. 4 SEM images of BGZO thin films before and after annealing at different temperatures (a) As-dep.; (b) 300 ℃; (c) 400 ℃; (d) 500 ℃; (e) 600 ℃

表1 退火前和不同退火温度下BGZO薄膜Zn/Ga比

Table 1 Zn/Ga ratio of BGZO thin films before and after annealing at different temperatures

Temperature/℃	Zn/Ga
As-dep.	43.65
300	43.38
400	33.90
500	34.54
600	32.82

图5 退火前和不同退火温度下BGZO薄膜的光学透过率

Fig. 5 Transmittance of BGZO thin films before and after annealing at different temperatures

图6 退火前和不同退火温度下BGZO薄膜的Tauc图

Fig. 6 Tauc plots of BGZO thin films before and after annealing at different temperatures

表2 退火前和不同退火温度下BGZO薄膜的光学禁带宽度

Table 2 Optical bandgap of BGZO thin films before and after annealing at different temperatures

Temperature/℃	Bandgap/eV
As-dep.	3.37
300	3.38
400	3.43
500	3.41
600	3.41

表3 不同退火温度下BGZO薄膜的电学性能

Table 3 Electrical properties of BGZO thin films at different annealing temperatures

Temperature/℃	Carrier concentration/ (×10²⁰, cm^-3)	Hall mobility/ (cm²·V^-1·s^-1)	Resistivity/ (Ω·cm)
300	0.278	0.62	0.362
400	1.382	1.78	0.028
500	1.834	2.64	0.014
600	0.783	5.06	0.016

图7 PCSS导通特性

Fig. 7 Output characteristics of PCSS

图8 PCSS电极边缘的SEM照片

Fig. 8 SEM images of PCSS electrode edge (a) Ni-PCSS-1; (b) Ni-PCSS-2; (c) BGZO-PCSS-1; (d) BGZO-PCSS-2

图9 PCSS电极边缘电场仿真

Fig. 9 Electric field simulation of electrode edge (a) Electrode edge electric field simulation; (b) Distribution of electric field strength at the edge of simulated electrode

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硼镓共掺氧化锌透明电极的制备及性能优化

Preparation and Performance Optimization of Boron-gallium Co-doped Zinc Oxide Transparent Electrodes

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