图1 电磁波谱, 红色框中为X射线对应的波长范围, 图上方曲线为电磁波能量

Fig. 1 Electromagnetic spectrum with the red box indicating the wavelength range corresponding to X-rays, and the curve above representing the electromagnetic wave energy

图2 色心可逆形成机理[45]

Fig. 2 Reversible formation mechanism of color center[45] (a) LAS-Sm relationship between diffuse reflectance intensity and X-ray dose rate accompanied by its corresponding photos; (b) EPR spectra of O element in initial state, photochromic state, and decolorized state; (c) Photochromic and luminescent modulation mechanism of LAS-Sm fluorescent powder; (d) Morphology of leaves and roses after irradiation with gradually prolonged time or different dose rates in bright and dark fields

图3 氧化还原反应机理[20,25]

Fig. 3 Redox reaction mechanism[20,25] (a) Digital photos of WO3 powder under different X-ray irradiation times[20]; (b, c) XPS (Al-Kα) nuclear level spectra of WO3 powder before (b) and after (c) X-ray irradiation[20]; (d) General model for X-ray induced photochromism of transition metal oxides[25]

图4 交叉弛豫相关的缺陷光电子转移机制[19]

Fig. 4 Photoelectron transfer mechanism of defects associated with cross-relaxation[19] (a) Photos of NaLuF4: Ho3+ NCs doped with different concentrations of Ho3+ ions at different X-ray irradiation doses; (b) Color changing mechanism of NaLuF4: Ho3+ NCs

图5 XP材料在X射线探测器领域的应用[18,21,27,57]

Fig. 5 Application of XP materials in X-ray detectors[18,21,27,57] (a-c) X-ray detection performance of single component and heterojunction detectors under 15 keV X-ray and -50 V bias[57]: (a) Current density of single component and heterojunction as a function of incident dose rate; (b) Dose dependent current density of single component and heterojunction with dashed line representing a signal-to-noise ratio (SNR) of 3; (c) Comparison of dark current density, sensitivity, and detection limit (LOD) of several advanced polycrystalline perovskite X-ray detectors; (d) Single crystal exposed to Cu-Kα X-ray (λ at 0.154056 nm, generator power at 2.97 kW) discoloration photo[18]; (e) Colour images of Al-Kα X-rays over time after 1 min of irradiation[27]; (f) Reflectance of BaMgSiO4 after exposure to different doses of X-rays (1.875 Gy·min-1)[21]; (g) Relationship between ΔR1 (coloring) and comprehensive X-ray irradiation dose[21]; (h) Dosimetric behavior of BaMgSiO4 under different X-ray irradiation intensities[21]; (i) Concept validation dosimeter for colorimetric detection of radiation dose[21]

图6 XP材料在X射线成像领域的应用[26,28,36]

Fig. 6 XP materials for X-ray imaging applications[26,28,36] (a) X-ray image of a tape measure[28]; (b) Pig trotters with a large flashing screen[28]; (c) Dynamic X-ray image of a chopper[28]; (d) High resolution Xr LEI illustrated by schematic diagram of 3D electronic imaging achieved by a flexible detector integrated with nano scintillators (Firstly, insert the detector into the 3D electronic circuit board for conformal coating; Next, the image of the electronic board is projected onto the detector; After stopping the X-ray, the detector is transferred to a hot substrate for thermal stimulation and subsequent luminescence imaging)[36]; (e) Xr LEI (voltage 50 kV) of 3D electronic board using prototype NaLuF4:Tb (15%, in mol) @NaYF4 detector[36]; (f) Photos of organic gel scintillators immersed in water under visible light and 365 nm ultraviolet light[26]; (g) Photos of snails under visible light and organic gel scintillators conducting self-healing X-ray imaging in water[26]

图7 XP材料在信息储存和防伪领域的应用[35]

Fig. 7 Application of XP materials in the field of information storage and anti-counterfeiting[35] (a) BNN:Er ceramic for reading, writing, and erasing processes of optical information; (b) Dual mode for fast optical storage; (c) Dynamic encryption for optical storage model