N-B-Al共掺荧光4H-SiC施主受主对发光性能研究

doi:10.15541/jim20160268

摘要/Abstract

摘要：

施主受主共掺杂的荧光4H-SiC可以通过复合发出可见光, 影响其发光性能的一个重要因素是施主-受主掺杂的浓度。本研究通过PVT生长方法制备了3英寸N-B-Al共掺的4H-SiC晶体, 采用Raman光谱、SIMS对晶体的结晶类型和掺杂浓度进行了表征; 采用PL发射谱和激发谱、荧光衰减曲线表征和内量子效率对晶体的发光波长、强度、施主-受主对复合发光性能进行了研究。结果发现, 低浓度Al掺杂样品在室温下发出黄绿色荧光。低浓度Al掺杂在晶体中提供较少的受主; 高浓度B、N掺杂形成施主, 从而贡献充足的电子-空穴对。这些电子-空穴的复合提高了施主-受主对复合的内量子效率, 进而增强光致发光强度, 增加平均发光寿命。

关键词: 碳化硅, 光致发光, 内量子效率

Abstract:

Fluorescent 4H-SiC, co-doped with donor and acceptor impurities, can work as phosphor for visible light emission by recombination. Donor concentration and acceptor impurities are two important factors which influence luminescent properties of fluorescent 4H-SiC. In this study, 3 inch N-B-Al co-doped 4H-SiC crystals were prepared by physical vapor transport method. Crystalline type and N-B-Al concentration of the doped 4H-SiC were measured by Raman spectrum and secondary ion mass spectra. Influences of doping concentrations on the photoluminescence were studied by photoluminescence excitation and emission spectra, luminescence decay curves, and internal and external quantum efficiencies. It is found that p-type fluorescent 4H-SiC with low Al doping concentration shows intensive yellow-green fluorescence at room temperature. Heavily doped N and B and lightly doped Al in 4H-SiC produce enough electron hole pairs for the recombination. This sufficient recombination enhances internal quantum efficiency of fluorescent 4H-SiC. Furthermore, the recombination is also helpful to increase their photoluminescence intensity and average fluorescence lifetime.

Key words: silicon carbide, photoluminescence, IQE

中图分类号:

TB23

卓世异, 刘熙, 高攀, 严成锋, 施尔畏. N-B-Al共掺荧光4H-SiC施主受主对发光性能研究[J]. 无机材料学报, 2017, 32(1): 51-55.

ZHUO Shi-Yi, LIU Xi, GAO Pan, YAN Cheng-Feng, SHI Er-Wei. Luminescence of Donor-acceptor-pair in Fluorescent 4H-SiC Doped with Nitrogen, Boron and Aluminum[J]. Journal of Inorganic Materials, 2017, 32(1): 51-55.

图/表 8

图1 (a) 3英寸PVT法生长的荧光4H-SiC晶片; (b)样品在能量5 mJ、波长325 nm激光激发条件下发射出可见光的照片, 其中325 nm脉冲激光光斑大约10 mm

Fig. 1 (a) Photographs of 3-inch fluorescent 4H-SiC wafer grown by PVT method; (b) a visible light emitting fluorescent 4H-SiC sample excited by 325 nm pulsed laser source with a power of 5 mJ. The spot diameter of 325 nm laser source is about 10 mm

图2 室温下样品a~g的拉曼光谱图

Fig. 2 Room temperature Raman scattering spectra of a~g samples (which listed in Table 1)

表1 样品a~g中N、B、Al掺杂浓度([B], [Al], [N])的SIMS表征结果

Table 1 SIMS results of N, B, Al doping concentration ([B], [Al], [N]) in samples a-g

Sample	[B]/cm^-3	[Al]/cm^-3	[N]/cm^-3
a	9.68×10¹⁸	8.81×10¹⁶	8.49×10¹⁸
b	9.05×10¹⁸	1.77×10¹⁶	7.60×10¹⁸
c	1.09×10¹⁹	3.30×10¹⁶	8.12×10¹⁸
d	8.08×10¹⁸	7.19×10¹⁵	6.91×10¹⁸
e	1.05×10¹⁹	6.10×10¹⁵	3.49×10¹⁸
f	1.08×10¹⁹	3.91×10¹⁵	7.01×10¹⁸
g	5.66×10¹⁷	3.34×10¹⁶	1.20×10¹⁸

图3 室温下样品a~g的光致发光激发谱图

Fig. 3 Room temperature photoluminescence excitation spectra of samples a-g

图4 室温下样品a~g的光致发光发射谱图

Fig. 4 Room temperature photoluminescence emission spectra of samples a-g

图5 室温下样品a~g的光致发光衰减曲线

Fig. 5 Room temperature photoluminescence decay curves of samples a-g(Inert: fitting of two Gaussian bands for PL spectra of samples a-g)

表2 样品a~g荧光寿命计算结果

Table 2 Fluorescence life time of samples a-g

Sample	τ₁/μs	τ₂/μs	τ/μs
a	72.60	1542.13	910.38
b	93.12	1838.96	1167.66
c	78.79	1699.81	1040.48
d	88.58	1910.29	1247.37
e	79.29	1822.03	1142.43
f	100.80	2093.37	1407.54
g	171.02	1341.72	1021.90

表3 PL谱计算样品吸收比值、内量子效率和外量子效率

Table 3 Values of absorbance and internal and external quantum efficiencies (IQE and EQE) evaluated from PL spectra

Sample	IQE/%	Abs	EQE/%
a	7.86	0.689	5.41
b	9.67	0.937	9.07
c	8.71	0.678	5.90
d	11.13	0.939	10.45
e	10.17	0.937	9.53
f	11.88	0.928	11.03
g	1.07	0.628	0.67

参考文献 13

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