PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响

doi:10.3724/SP.J.1077.2013.12203

无机材料学报 ›› 2013, Vol. 28 ›› Issue (2): 201-206.DOI: 10.3724/SP.J.1077.2013.12203 CSTR: 32189.14.SP.J.1077.2013.12203

PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响

于方丽^1,2, 白宇², 秦毅², 岳冬², 罗才军², 杨建锋²

(1. 盐城工学院材料工程学院, 盐城 224051; 2. 西安交通大学金属材料强度国家重点实验室, 西安710049)

收稿日期:2012-04-03 修回日期:2012-05-30 出版日期:2013-02-10 网络出版日期:2013-01-23
作者简介:于方丽(1979–), 女, 博士, 讲师. E-mail: yufangli0405@163.com
基金资助:
国家自然科学基金(51202211, 51202187);江苏省新型环保重点实验室开放课题基金(AE201013)

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

YU Fang-Li^1,2, BAI YU², QIN Yi², YUE Dong², LUO Cai-Jun², YANG Jian-Feng²

(1. School of Materials Engineering, Yancheng Institute of Technology, Yancheng 224051, China; 2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China)

Received:2012-04-03 Revised:2012-05-30 Published:2013-02-10 Online:2013-01-23
About author:YU Fang-Li. E-mail: yufangli0405@163.com
Supported by:
National Natural Science Foundation of China (51202211, 51202187);Research Fund of Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province (AE201013)

摘要/Abstract

摘要：

在单晶Si和多晶Cu基底表面上使用等离子体增强化学气相沉积(PECVD)方法沉积了SiC薄膜. 通过高分辨透射电子显微镜(HRTEM)、X射线光电子能谱仪(XPS)及扫描电子显微镜(SEM)研究基底温度对SiC薄膜成分、结构及生长速度的影响规律。结果表明: 在60~500℃基底温度下制备的SiC薄膜均为非晶态薄膜, 薄膜的生长速度随基底温度的升高而线性降低, 并且在相同沉积条件下, 薄膜在Si基底上的生长速度要高于Cu基底。此外, 薄膜中的硅碳原子比随基底温度的升高而降低, 当基底温度控制在350℃左右时, 可以获得硅碳比为1:1较理想的SiC薄膜。

关键词: 碳化硅, 等离子体增强化学气相沉积, 非晶态薄膜, 生长速度, 基底温度

Abstract:

SiC films were deposited on the surface of single crystal Si(100) and polycrystalline Cu by plasma enhanced chemical vapor deposition (PECVD). The effect of substrate temperature on the composition, structure and growth rate of as-deposited films was studied by high resolution transmission electron microscope (HRTEM), X-ray photoelectron spectroscope (XPS) and scanning electron microscope (SEM). The results showed that the as-deposited films were amorphous and the growth rate of films decreased with increasing substrate temperature from 60℃ to 500℃. In addition, the growth rate of films deposited on the Si(100) wafer was higher than ones deposited on the polycrystalline Cu under the same deposition conditions. Meanwhile, it was found that the Si/C ratio of films decreased with the increase of substrate temperature. When the substrate temperature was controlled at about 350℃, the Si/C ratio in film was nearly equal to 1:1.

Key words: SiC, PECVD, amorphous film, growth rate, substrate temperature

中图分类号:

TB34

于方丽, 白宇, 秦毅, 岳冬, 罗才军, 杨建锋. PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响[J]. 无机材料学报, 2013, 28(2): 201-206.

YU Fang-Li, BAI YU, QIN Yi, YUE Dong, LUO Cai-Jun, YANG Jian-Feng. Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD[J]. Journal of Inorganic Materials, 2013, 28(2): 201-206.

图/表 8

Table 1 Raw materials used in the experiment

Raw materials	Description
SiH₄	Purity, 99.999%, Diluted to10% by H₂
CH₄	Purity, 99.999%
H₂	Purity, 99.999%
Ar	Purity, 99.99%
Si(100) wafer	P-type doping semiconductor
Cu wafer	Rolling state, Thickness, 0.1 mm

Table 2 Deposition parameters of thin films

SiH₄ flow rate /sccm	CH₄ flow rate /sccm	H₂ flow rate /sccm	Substrate temperature /℃	RF /(W·cm^-2)	Pressure /Pa
20	20	130	60-500	1.3	100

Table 3 The etching solution and time of different substrate

Substrate	Etching solution	Etching time /s
Si (100)	Mixed solution of HF and HNO₃ (5:1)	30-35
Cu	50 vol% HNO₃	150-180

图1 不同基底温度下单晶Si (100)与多晶铜基底表面沉积薄膜的剖面SEM照片

Fig. 1 SEM images of deposited films on the single crystal Si (100) and polycrystalline Cu substrates at different substrate temperatures

图2 不同基底温度下SiC薄膜生长速度

Fig. 2 The deposition rate of SiC films at different substrate temperature

图3 不同基底温度下单晶Si (100)及多晶铜表面沉积SiC薄膜的HRTEM照片

Fig. 3 HRTEM images of SiC films on the single crystal Si (100) and polycrystalline Cu substrates at different substrate temperature

图4 单晶Si(100)表面生长薄膜XPS图谱

Fig. 4 XPS spectra of as-deposited films on the surface of single crystal Si(100)

图5 单晶Si(100)及多晶铜基底表面生长的SiC薄膜中Si与C原子百分含量

Fig. 5 Atomic content of Si and C atoms in SiC films on the surfaces of single crystal Si(100) and polycrystalline Cu, (a) Si; (b) Cu

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PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

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