射频磁控溅射制备HfLaO薄膜结构和光学性能研究

doi:10.3724/SP.J.1077.2011.01281

无机材料学报 ›› 2011, Vol. 26 ›› Issue (12): 1281-1286.DOI: 10.3724/SP.J.1077.2011.01281 CSTR: 32189.14.SP.J.1077.2011.01281

射频磁控溅射制备HfLaO薄膜结构和光学性能研究

李智¹, 苗春雨², 马春雨², 张庆瑜²

(1. 大连大学机械工程学院, 大连 116622; 2. 大连理工大学物理与光电工程学院, 大连116023)

收稿日期:2011-01-11 修回日期:2011-04-11 出版日期:2011-12-20 网络出版日期:2011-11-11
基金资助:
辽宁省教育厅高校科研计划项目(2008049); 国家自然科学基金(10605009, 10774018); 中央高校基本科研业务专项基金(DUT11LK44)

Structural and Optical Properties of HfLaO Films Prepared by RF Magnetron Sputtering

LI Zhi¹, MIAO Chun-Yu², MA Chun-Yu², ZHANG Qing-Yu²

(1. Department of Mechanical Engineering, Dalian University, Dalian 116622, China; 2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China)

Received:2011-01-11 Revised:2011-04-11 Published:2011-12-20 Online:2011-11-11
Supported by:
S&T Plan Projects of Liaoning Provincial Education Department (2008049), National Natural Science Foundation (10605009, 10774018); Fundamental Research Funds for the Central Universities (DUT11LK44)

摘要/Abstract

摘要： 采用射频磁控溅射技术制备HfLaO薄膜, 利用X射线衍射(XRD)分析了薄膜的微结构, 通过紫外?可见光分光光度计测量了薄膜的透过谱, 计算了薄膜的折射率和禁带宽度, 利用原子力显微镜观察了薄膜的表面形貌. 结果表明: 沉积态HfLaO(La: 25%~37%)薄膜均为非晶态, 随着La掺入量的增加, HfLaO薄膜的结晶化温度逐渐升高, HfLaO(La~37%)薄膜经900℃高温退火后仍为非晶态, 具有优良的热稳定性, AFM形貌分析显示非晶薄膜表面非常平整. 随着 La掺入量的增加, HfLaO薄膜的透射率先降后增, 在可见光范围薄膜均保持较高的透射率(82%以上). HfLaO薄膜的折射率为1.77~1.87. 随着La掺入量的增加, HfLaO薄膜的折射率呈先增后降的变化趋势, 同时HfLaO薄膜的Eg逐渐降低, 分别为5.9eV(La~17%)、5.87eV(La~25%)、5.8eV(La~33%)和5.77eV(La ~37%).

关键词: HfLaO薄膜, 磁控溅射, 热学稳定性, 光学性能

Abstract: HfLaO films doped with different La contents, varying from 17% to 37%, were deposited using RF magnetron sputtering. The structure, thermal stability, surface morphology, and optical properties of HfLaO films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM) and spectrophotometry. The results indicate that as-deposited HfLaO with 25%-37% La films are amorphous. With the increase of La contents, the crystallization temperature for HfLaO films is increased. The HfLaO film with 37% La remains amorphous even after annealed at 900℃. The AFM images show amorphous HfLaO films, which imply a good thermal stability have a relatively smooth surface. The average transmittance in the visible range is above 82% for all the films. The amorphous structure yields films of significantly higher transparency than the polycrystalline structure does. The refractive indices of the films are determined to be in the range 1.77-1.87. As the La concent increases the refractive indices of the films are initially increased and then decreased. The optical band gap of the HfLaO films decreases to 5.9eV (La 17%), 5.87eV(La 25%), 5.8eV(La 33%), 5.77eV(La 37%), respectively.

Key words: HfLaO films, magnetron sputtering, thermal stability, optical properties

中图分类号:

O484
TN386

李智, 苗春雨, 马春雨, 张庆瑜. 射频磁控溅射制备HfLaO薄膜结构和光学性能研究[J]. 无机材料学报, 2011, 26(12): 1281-1286.

LI Zhi, MIAO Chun-Yu, MA Chun-Yu, ZHANG Qing-Yu. Structural and Optical Properties of HfLaO Films Prepared by RF Magnetron Sputtering[J]. Journal of Inorganic Materials, 2011, 26(12): 1281-1286.

参考文献

[1] Sayan S, Aravamudhan S, Busch B W, et al. Chemical vapor deposition of HfO2 films on Si(100). J. Vac. Sci. Technol., 2002, A20 (2): 507-512.

[2] Aygun G, Yildiz I. Interfacial and structural properties of sputtered HfO2 layers. J. Appl. Phys., 2009, 106(1): 014312-1-7.

[3] Cisneros-Morales M C, Aita C R. The effect of nanocrystalline size in monoclinic HfO2 films on lattice expansion and near edge optical absorption. Appl. Phys.Lett., 2010, 96(19): 191904-1-3.

[4] Wu Y H, Yang M Y, Chin Albert, et al . Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 -. IEEE Electron Device Lett., 2000, 21(7):341-343.

[5] He W, Zhang L, Chan D S H, et al . Cubic structured HfO2 with optimized doping of lanthanum for higher dielectric constant. IEEE Electron Device Lett., 2009, 30(6): 623-625.

[6] Yamamoto Y, Kita K, Kyuno K, et al. Structural and electrical properties of HfLaOx films for an amorphous high k gate insulator. Appl. Phys. Lett., 2006, 89(3): 032903-1-3.

[7] Wang X P, Li M F, Chin Albert, et al. Physical and electrical characteristics of high k gate dielectric Hf1-xLaxOy. Solid State Electronics, 2006, 50(6): 986-991.

[8] Huang L Y, Li A D, Zhang W Q, et al. Fabrication and characterization of La doped HfO2 gate dielectrics by metal organic chemical vapor deposition. Appl. Surf. Sci., 2010, 256(8): 2496-2499.

[9] Tan T T, Liu Z T, Lu H C, et al. Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing. Optical Materials, 2010, 32(3): 432-435.

[10] Das N C, Sahoo N K, Bhattacharyya D, et al. Correlation between local structure and refractive index of e-beam evaporated (HfO2-SiO2) composite thin films. J. Appl. Phys., 2010, 108(2): 023515-1-5.

[11] Khoshman J M, Kordesch M E. Optical properties of a-HfO2 thin films. Surf. Coat. Technal., 2006, 201(6): 3530-3535.

[12] Xiong Y H, Tu H L, Du J, et al. Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric. Appl. Phys. Lett., 2010, 97(1): 012901-1-3.

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射频磁控溅射制备HfLaO薄膜结构和光学性能研究

Structural and Optical Properties of HfLaO Films Prepared by RF Magnetron Sputtering

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