A:Al2O3(A=Cr, Fe, Ni)晶体生长及其缺陷研究

doi:10.3724/SP.J.1077.2011.01266

无机材料学报 ›› 2011, Vol. 26 ›› Issue (12): 1266-1272.DOI: 10.3724/SP.J.1077.2011.01266 CSTR: 32189.14.SP.J.1077.2011.01266

A:Al₂O₃(A=Cr, Fe, Ni)晶体生长及其缺陷研究

范修军¹, 王越¹, 徐宏²

(北京工业大学1. 应用数理学院; 2. 激光工程研究院, 北京 100124)

收稿日期:2011-01-07 修回日期:2011-03-07 出版日期:2011-12-20 网络出版日期:2011-11-11
作者简介:范修军(1982-), 男, 硕士研究生. E-mail: fanxiujun@emails.bjut.edu.cn
基金资助:
北京市教委基金(JC00615200901)

Growth and Defects Study of A:Al₂O₃(A=Cr, Fe, Ni) Single Crystals

FAN Xiu-Jun¹, WANG Yue¹, XU Hong²

(1. College of Applied Sciences, Beijing University of Technology, Beijing 100124, China; 2. Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China)

Received:2011-01-07 Revised:2011-03-07 Published:2011-12-20 Online:2011-11-11
About author:FAN Xiu-Jun. E-mail: fanxiujun@emails.bjut.edu.cn
Supported by:
Beijing Municipal Commission of Education Foundation (JC00615200901)

摘要/Abstract

摘要： 报道了A:Al₂O₃(A=Cr, Fe, Ni)晶体光学浮区法生长工艺, 研究了旋转速率、生长速率对晶体质量的影响, 制备出了直径6~8 mm、长度为60~80 mm的A:Al₂O₃晶体. A:Al₂O₃晶体的生长方向为<001>方向, X射线双晶摇摆曲线表明A:Al₂O₃晶体具有良好的晶体质量. 通过X射线衍射、扫描电镜、偏光显微镜对晶体中的生长缺陷进行了研究, 结果表明, A:Al₂O₃晶体的主要缺陷为小角度晶界、包裹体和溶质尾迹. 研究了A:Al₂O₃晶体的光谱性能, 并对A:Al₂O₃晶体的介电性能进行了测量, 室温下1000 kHz时A:Al₂O₃晶体表现出较高的介电系数e_r(12.1~15.7)和较小的介电损耗tand(0.0020~0.0002).

关键词: A:Al₂O₃, 晶体生长, 光学浮区法, 晶体缺陷

Abstract: High quality Cr-, Fe- and Ni- doped Al₂O₃ (A:Al₂O₃) single crystals with a diameter of 6?8 mm and a length of 60-80 mm were successfully produced by the floating zone technique. The relationship between crystal quality and growth conditions was discussed, and the optimum preparation parameter was obtained. The crystals growth direction was determined as <001> by X-ray diffraction. The X-ray rocking curve of the crystal had a FWMH of 0.089o, proving excellent quality of the crystal. The as-grown crystals were characterized by polarized optical microscope and scanning electron microscope, as well as X-ray diffraction. The observed primary crystal defects were sub-angle grain boundaries, inclusions and solute trails. The absorption spectra properties and dielectric constant measurements of A:Al₂O₃ crystals and fluorescence spectra for Cr:Al₂O₃ crystals were investigated. In view of the fact that grown A:Al₂O₃ crystals show good quality, a respectively high dielectric constant e_r(12.1-15.7), low dielectric loss tan? (0.0020?0.0002), and favorable thermal stability suggests their utilization as laser matrix, dielectric material for microelectronics and substrate material.

Key words: A:Al₂O₃, single crystal growth, floating zone technique, crystal defects

中图分类号:

O782

范修军, 王越, 徐宏. A:Al₂O₃(A=Cr, Fe, Ni)晶体生长及其缺陷研究[J]. 无机材料学报, 2011, 26(12): 1266-1272.

FAN Xiu-Jun, WANG Yue, XU Hong. Growth and Defects Study of A:Al₂O₃(A=Cr, Fe, Ni) Single Crystals[J]. Journal of Inorganic Materials, 2011, 26(12): 1266-1272.

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A:Al₂O₃(A=Cr, Fe, Ni)晶体生长及其缺陷研究

Growth and Defects Study of A:Al₂O₃(A=Cr, Fe, Ni) Single Crystals

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