无机材料学报

• 研究论文 •    下一篇

ZnO基稀磁半导体薄膜材料研究进展

刘学超1,2, 施尔畏1, 张华伟1,2, 宋力昕1, 陈之战   

  1. 1. 中国科学院上海硅酸盐研究所, 上海 200050;
    2. 中国科学院研究生院, 北京 100049
  • 收稿日期:2005-05-28 修回日期:2005-10-10 出版日期:2006-05-20 网络出版日期:2006-05-20

Recent Progress in Developing ZnO-based Thin Films of Diluted Magnetic Semiconductors

LIU Xue-Chao1,2, SHI Er-Wei1, ZHANG Hua-Wei1,2, SONG Li-Xin1, CHEN Zhi-Zhan1   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
    2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2005-05-28 Revised:2005-10-10 Published:2006-05-20 Online:2006-05-20

摘要: 稀磁半导体(DMSs)材料同时利用了电子的电荷和自旋属性, 具有优异的磁、磁光、磁电等性能, 在材料科学和未来自旋电子器件领域具有广阔的应用前景. 本文对近几年来ZnO基稀磁半导体薄膜材料研究进展作一综述, 对研究热点和存在问题作一评价, 提出解决的思路, 最后对DMSs器件的潜在应用作简单介绍.

关键词: ZnO, 稀磁半导体, 过渡金属, 自旋电子器件

Abstract: Diluted magnetic semiconductors (DMSs) are expected to play an important role in interdisciplinary materials science and future spintronics because charge and spin of electrons are accommodated into single matter resulting in interesting magnetic, magneto-optical, magneto-electric and other properties. In this paper, the recent progress in developing ZnO-based DMSs was reviewed, the hot research and existing problems were evaluated, much better analysis was proposed, and some potential use of DMSs was also presented.

Key words: ZnO, diluted magnetic semiconductors (DMSs), transition metals (TM), spintronic devices

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