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无机材料学报

无机材料学报

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Yb2O3的掺杂方式对Ba(Ti1-y)Zry)O3陶瓷介电性能的影响

齐建全; 桂治轮; 王永力; 李琦; 李龙土   

  1. 清华大学材料系新型陶瓷与精细工艺国家重点实验室 北京 100084
  • 收稿日期:2000-09-22 修回日期:2000-10-30 出版日期:2001-09-20 网络出版日期:2001-09-20

Influence of Doping Style of Yb2O3 on Dielectric Character of Ba(Ti1-yZry)O3 Ceramics

QI Jian-Quan; GUI Zhi-Lun; WANG Yong-Li; LI Qi; LI Long-Tu   

  1. Dept. Mat. Sci & Eng.; Tsinghua University; Beijing 100084; China
  • Received:2000-09-22 Revised:2000-10-30 Published:2001-09-20 Online:2001-09-20

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摘要： 在Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３中，Ｙｂ２Ｏ３的不同掺杂方式引起了材料性能的显著变化．采用 Ｂａ（Ｔｉ１－ｙＺr
ｙ）Ｏ３合成后Ｙｂ２Ｏ３的适量掺杂，陶瓷介温峰明显地移动，介电常数大幅度提高， 获得了室温介电常数＞２５０００，１２５０℃左右烧成，符合Ｙ５Ｖ标准的高介材料．合成后掺杂的 Ｙｂ２Ｏ３，使材料介电常数提高，可能与施主掺杂引入的局域化电子有关．合成前掺杂Ｙｂ２Ｏ３ 的样品，介电常数较低，移峰效率偏小，可能是Ｙｂ的Ｔｉ位受主取代使施主引入的局域化电子 得到补偿的结果．

关键词: Yb2O3, Ba（Ti1-yZry）O3, 介电性能

Abstract: A distinct diversification of dielectric character of Ba(Ti1-yZry)O3 ceramics doped with Yb2O3 in different doping style was observed.
When adapted content of Yb2O3 is added after synthesis of Ba(Ti1-yZry)O3, the ferroelectric phase transition points of the ceramics are shifted distinctly,
and the dielectric constants at these points increase greatly. This doping method at 1250℃ results in the sample with a high dielectric constant over
25000 at room temperature and according with Y5V specifications. The enhancement of dielectric constant of Ba(Ti1-yZry)O3 caused by the doping of Yb2O3
after synthesis is associated with the localization of electrons produced by donor doping. Doping by Yb2O3 before synthesis results in the sample with a relative
low dielectric constant and a weak efficiency of Curie point shifting. This is due to the compensation of localized-electrons by acceptors that introduced by
the doping of Yb3+ replacing Ti site in perovskite lattice.

Key words: Yb2O3, Ba(Ti1-yZry)O3, dielectric properties

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