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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

ZnO压敏陶瓷的晶粒生长和电学性能

章天金; 周东祥; 龚树萍   

  1. 华中理工大学电子科学与技术系; 武汉 430074
  • 收稿日期:1998-12-14 修回日期:1999-02-01 出版日期:1999-12-20 网络出版日期:1999-12-20

Effects of Valence States of Additions on the Grain Growth and Electrical Properties of Low Breakdown Voltage ZnO Varistors

ZHANG Tian-Jin; ZHOU Dong-Xiang; GONG Shu-Ping   

  1. Department of Electronic Science and Technology; HUST; Wuhan 430074; China
  • Received:1998-12-14 Revised:1999-02-01 Published:1999-12-20 Online:1999-12-20

PDF (PC)

1035

被引次数

38

摘要： 研究了不同价态Co、Mn添加物对低压ZnO压敏陶瓷晶粒生长和电学性能的影响，分析了由于不同价态Mn和Co掺杂所产生的缺陷类型，应用晶粒生长的动力学方程：Gn=Dtexp(-E/RT)确定了晶粒生长的动力学指数和激活能．实验结果表明：对于低压ZnO压敏陶瓷，其晶粒生长的动力学指数n＝6，激活能E＝224±17kJ／mol，随着Mn、Co价态的增加，ZnO压敏陶瓷的平均晶粒大小增加，提高烧结温度，ZnO压敏陶瓷的压敏场强E1mA降低，漏电流IL增加，非线性系数α降低．在低压ZnO压敏陶瓷的制备过程中，烧结温度以不超过1250℃为宜．

关键词: 晶粒生长, 电性能, 价态

Abstract: Grain growth and electrical properties in ZnO system with various valence states of manganese and cobalt were studied. The results were discussed by means of defects
produced by the additions. The grain growth was analyzed from the kinetic grian growth equation: Gn=Dtexp(-E/RT). The results show that the grain growth kinetic exponent
n is 6 and activation energy is 224±17kJ/mol. The grain size increases with the valence states of manganese and cobalt. Raising the firing temperatures can decrease
the breakdown voltage, but the leakage current will increase and its nonlinear coefficient will decline when the firing temperature is too high. In general, the firing temperature is not
exceed 1250℃.

Key words: grain growth, electrical property, valence state

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