坩埚下降法生长Bi12SiO20晶体中的散射颗粒研究

doi:10.15541/jim20250521

摘要/Abstract

摘要： 硅酸铋(Bi₁₂SiO₂₀, BSO)晶体是一种宽带隙、高电阻率的非铁电立方半绝缘体,凭借其线性电光效应、光电导特性、压电性能及光折变效应,在诸多光电子领域展现出广阔的应用前景。目前,采用坩埚下降法生长的 BSO晶体中易形成散射颗粒缺陷,严重制约其实际应用。本研究以坩埚下降法生长的BSO晶体为研究对象,采用偏光显微镜、扫描电子显微镜-能量色散X射线光谱及分光光度计等表征手段,系统分析了BSO晶体中散射颗粒的形貌、尺寸、空间分布及化学组成,并结合晶体生长热力学与动力学过程,探讨了散射颗粒的形成机制。结果表明,BSO晶体中的散射颗粒主要成分为金属铂,其来源于高温下BSO熔体对铂金坩埚的腐蚀反应;该类颗粒以棒状-H状过渡的线状缺陷存在,H状缺陷在纵向轮廓上呈连续的波峰-波谷锯齿状精细结构;其形成与晶体生长环境相关,主要分布在晶片中心区域,且散射颗粒取向与晶体[100]生长方向基本一致。基于散射颗粒的本质与形成路径,本研究提出严格控制原料比、降低熔体生长温度等优化生长工艺参数的解决方案,为制备大尺寸、低铂金散射颗粒、高光学均匀性的BSO晶体提供了依据。

关键词: Bi₁₂SiO₂₀晶体, 坩埚下降法, 散射颗粒, 晶体生长

Abstract: Bismuth silicon oxide (Bi₁₂SiO₂₀, BSO) crystal is a wide-bandgap, high-resistivity and non-ferroelectric cubic semi-insulator. Due to its linear electro-optic effect, photoconductive properties, piezoelectric performance, and photorefractive effect, it exhibits broad applications in various optoelectronic fields. However, the scattering particles generated from the Bridgman crystal growth, have seriously limited its practical applications. This study focuses on the scattering particles in BSO crystals grown via the vertical Bridgman method. We systematically analyzed the morphology, size, spatial distribution, and chemical composition of the scattering particles by transmission polarizing microscopy (TPM), scanning electron microscope (SEM) with energy dispersive spectroscopy (EDS). Combining thermodynamic and the kinetic processes of crystal growth, the formation mechanism of these scattering particles was also discussed. Results indicate that the scattering particles are primarily composed of metallic platinum (Pt), originating from corrosion of the platinum crucible by the high-temperature melt. These particles exist as linear defects exhibiting a rod-like to H-shaped transitional morphology, where the H-shaped defects display a continuous peak-valley zigzag fine structure along their longitudinal profile. Their formation correlates with the crystal growth environment, showing predominant distribution in the central region of the wafer, while the orientation of the scattering particles aligns closely with the [100] crystal growth direction. Based on the study of this work, we propose optimized growth parameters, including strict control of the raw material stoichiometry and reduction of the melt temperature, to suppress the incorporation of platinum. This work provides a practical foundation for producing large-size BSO crystals with low platinum-scattering defect density and high optical homogeneity.

Key words: Bi₁₂SiO₂₀crystal, vertical Bridgman method, scattering particles, crystal growth

俞延强, 熊巍, 陈良, 周尧, 李颖, 袁晖. 坩埚下降法生长Bi₁₂SiO₂₀晶体中的散射颗粒研究[J]. 无机材料学报, DOI: 10.15541/jim20250521.

YU Yanqiang, XIONG Wei, CHEN Liang, ZHOU Yao, LI Ying, YUAN Hui. Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250521.

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坩埚下降法生长Bi₁₂SiO₂₀晶体中的散射颗粒研究

Scattering Particles in Bi₁₂SiO₂₀ Crystals Grown by the Vertical Bridgman Method

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