Te基热电器件反常界面层生长行为及界面稳定性研究

doi:10.15541/jim20240057

无机材料学报 ›› 2024, Vol. 39 ›› Issue (8): 903-910.DOI: 10.15541/jim20240057 CSTR: 32189.14.10.15541/jim20240057

所属专题：【能源环境】热电材料(202409)

Te基热电器件反常界面层生长行为及界面稳定性研究

苗鑫¹(), 闫世强¹, 韦金豆¹, 吴超¹, 樊文浩², 陈少平¹()

1.太原理工大学材料科学与工程学院, 太原 030024
2.太原理工大学物理学院, 太原 030024

收稿日期:2024-01-30 修回日期:2024-02-20 出版日期:2024-08-20 网络出版日期:2024-04-19
通讯作者: 陈少平, 教授. E-mail: chenshaoping@tyut.edu.cn
作者简介:苗鑫(1999-), 男, 硕士研究生. E-mail: miaoxin0242@link.tyut.edu.cn
基金资助:
国家自然科学基金(52202277);山西省科技合作与交流专项项目(202104041101007);山西省省筹资金资助回国留学人员科研项目(2023-083)

Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability

MIAO Xin¹(), YAN Shiqiang¹, WEI Jindou¹, WU Chao¹, FAN Wenhao², CHEN Shaoping¹()

1. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
2. College of Physics, Taiyuan University of Technology, Taiyuan 030024, China

Received:2024-01-30 Revised:2024-02-20 Published:2024-08-20 Online:2024-04-19
Contact: CHEN Shaoping, professor. E-mail: chenshaoping@tyut.edu.cn
About author:MIAO Xin (1999-), male, Master candidate. E-mail: miaoxin0242@link.tyut.edu.cn
Supported by:
National Natural Science Foundation of China(52202277);Special Project of Science and Technology Cooperation and Exchange of Shanxi Province(202104041101007);Shanxi Scholarship Council of China(2023-083)

摘要/Abstract

摘要：

单质Te具有优异的热电优值(ZT), 但其与金属电极连接界面处的剧烈元素交互扩散及反应会引入较大的接触电阻率(ρ_c), 导致器件的转换效率(η)较低。因此, 寻找合适的阻挡层来优化Te与金属电极间的连接至关重要。本研究基于梯度结构报道了一种宽相场Ni-Te合金阻挡层NiTe_2-_m (Ni_xTe(x=0.500~0.908))。结果表明, 当x=0.500时, Ni_0.5Te/Te_0.985Sb_0.015/Ni_0.5Te器件的界面处无任何反应层及微观缺陷, ρ_c小于10 μΩ·cm², η在180 K温差(热端温度473 K)时达到了理论值的75%。同时, 界面具有良好的热稳定性, 在473 K老化期间, 界面微观组织、ρ_c以及η无明显变化。当x>0.500时, 界面反应层厚度随x增大而逐渐减小, 即主导界面反应层生长行为的因素并非常规的界面反应能及浓度梯度等热力学因素。进一步分析表明, 反常生长源于动力学因素中的“原子空位”对反应层生成的迟滞作用。

关键词: Te, 热电器件, 扩散动力学, 阻挡层, 热稳定性

Abstract:

Though Te has excellent figure of merit (ZT), the severe element diffusion and reaction at the Te/metallic-electrodes interface render high contact resistivity (ρ_c) and low device conversion efficiency (η). Therefore, it is critical to develop suitable barrier layers for optimizing the bonding between Te and metallic electrodes. In this work, an appropriate barrier layer, NiTe_2-_m (Ni_xTe (x=0.500~0.908)), was screened based on gradient structure. No reaction layers and defects at the interface of Ni_0.5Te/Te_0.985Sb_0.015/Ni_0.5Te were detected before and after aging at 473 K. Low ρ_c (less than 10 μΩ·cm²) and high η (about 75% of the theoretical value under a temperature difference of 180 K (hot end: 473 K)) were achieved and maintained stable during aging, showing excellent thermal stability of the interface. When x>0.500, the thickness of the interface reaction layer decreased with x increasing, showing the retarding effect dominating the growth behavior of interface reaction layer not from the usual thermodynamic factors, such as interface reaction energy and composition gradient, but from the “atom vacancy” on formation of the reaction layer.

Key words: Te, thermoelectric device, diffusion dynamic, barrier, thermal stability

中图分类号:

TN377

苗鑫, 闫世强, 韦金豆, 吴超, 樊文浩, 陈少平. Te基热电器件反常界面层生长行为及界面稳定性研究[J]. 无机材料学报, 2024, 39(8): 903-910.

MIAO Xin, YAN Shiqiang, WEI Jindou, WU Chao, FAN Wenhao, CHEN Shaoping. Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability[J]. Journal of Inorganic Materials, 2024, 39(8): 903-910.

图/表 17

图1 Te0.985Sb0.015前驱粉末的微观形貌及成分组成

Fig. 1 Microstructure and composition of Te0.985Sb0.015 precursor powder (a) Backscattered SEM image; (b) XRD patterns and quasi-1D chain crystal structure of Te and Te0.985Sb0.015 powders; Colorful figures are available on website

图2 NixTe样品的成分及晶格参数

Fig. 2 Composition and lattice parameters of NixTe samples (a) XRD patterns; (b) Lattice constant a changed with x

图3 (a) Te0.985Sb0.015/NixTe各界面反应层(Interface Reaction Layers, IRLs)的厚度, (b)各界面产物的摩尔生成吉布斯自由能ΔrGT

Fig. 3 (a) Thicknesses of the interface reaction layers (IRLs) at the Te0.985Sb0.015/NixTe interfaces, and (b) formation Gibbs free energies in molar (ΔrGT) of the interface products at the Te0.985Sb0.015/NixTe interfaces

图4 Te/NiTe2-m界面反应层(Interface Reaction Layer, IRL)生长行为模型图

Fig. 4 Diagram of the growth of the interface reaction layer (IRL) at Te/NiTe2-m interface

表1 Te0.985Sb0.015/NixTe界面处原子的总迁移量CN·l

Table 1 Total migration of atoms (CN·l) at Te0.985Sb0.015/NixTe interface

Total migration of atoms	x=0.500	x=0.563	x=0.667	x=0.833	x=0.908	Te_0.985Sb_0.015/Ni
C_N·l/(mol·cm^-2)	0	0.1297	0.2134	0.2810	0.3154	0.5653

图5 473 K老化6及12 d后的Te0.985Sb0.015/NixTe界面微观结构

Fig. 5 Microstructures of Te0.985Sb0.015/NixTe interfaces after aging at 473 K for 6 and 12 d Backscattering SEM images for (a) x=0.500, (b) x=0.563, and (c) x=0.667

图6 NixTe/Te0.985Sb0.015/NixTe (x=0.500, 0.563, 0.667)单臂器件的性能

Fig. 6 Performance of NixTe/Te0.985Sb0.015/NixTe (x=0.500, 0.563, 0.667) single-leg devices (a, b) Room temperature V-I curves and contact resistivity, ρc, before aging; (c) Time-dependent room temperature ρc; (d) Time-dependent efficiency, η, under a temperature difference of 180 K (hot end: 473 K, cold end: 293 K)

图S1 烧结态Te0.985Sb0.015的断口形貌及元素分布

Fig. S1 Fracture microstructure and element distribution of sintered Te0.985Sb0.015 (a, b) Backscattered SEM images; (c) Corresponding EDS mapping

图S2 平行于烧结压力方向上的Te0.985Sb0.015的热电性能

Fig. S2 Thermoelectric performance of Te0.985Sb0.015 in the direction parallel to the sintering pressure (a) Total thermal conductivity, κ; (b) Carrier concentration, n; (c) Resistivity; (d) Seebeck coefficient; (e) Power factor, PF; (f) Dimensionless ZT of Te0.985Sb0.015; The test results of Pei et al.[15] are also drawn in the figures for comparison

图S3 NixTe样品的电性能

Fig. S3 Electrical performance of NixTe samples (a) Resistivity; (b) Seebeck coefficient

图S4 烧结态Te0.985Sb0.015/NixTe界面的微观形貌以及元素分布

Fig. S4 Microstructures and element distributions of sintered Te0.985Sb0.015/NixTe interfaces Backscatter SEM images and EDS spectra for (a) x=0.500, (b) x=0.563, (c) x=0.667, (d) x=0.833, and (e) x=0.908

图S5 烧结态Te0.985Sb0.015/Ni界面的背散射SEM照片

Fig. S5 Backscatter SEM image of sintered Te0.985Sb0.015/Ni interface

表S1 热力学数据

Table S1 Thermodynamic data. Values of entropy (ST), enthalpy (HT), and Gibbs free energy (GT) at 298.15, 600.00 and 700.00 K, respectively

Phase lable	Formula in reference	Formula used here	Temperature/K	S_T/(J·mol^-1·K^-1)	H_T/(kJ·mol^-1)	G_T/(kJ·mol^-1)	Ref.
δ(-NiTe_2-_x, 52.2%-66.7% (in atom) Te)	Ni_0.476Te_0.524	Ni_0.908Te	298.15	76.393	-51.908	-74.685	[40]
			600.00	112.729	-36.120	-103.758
			700.00	121.397	-30.494	-115.472
	Ni_0.4Te_0.6	Ni_0.667Te	298.15	66.917	-47.833	-67.785	[40]
			600.00	98.732	-33.987	-93.226
			700.00	106.415	-29.000	-103.491
	Ni_0.333Te_0.667	Ni_0.5Te	298.15	60.135	-43.778	-61.707	[40]
			600.00	88.253	-31.552	-84.504
			700.00	95.001	-27.172	-93.673
Te	Te	Te	298.15	49.497	0.000	-14.757	[41]
			600.00	69.537	8.766	-32.956
			700.00	74.694	12.114	-40.171
Ni	Ni	Ni	298.15	29.874	0.000	-8.907	[41]
			600.00	50.419	9.008	-21.243
			700.00	55.546	12.326	-26.557

表S2 298.15, 600.00和700.00 K条件下各界面反应产物的摩尔生成吉布斯自由能∆rGT

Table S2 Molar formation Gibbs free energies (ΔrGT) of interface products at 298.15, 600.00 and 700.00 K, respectively

Chemical reaction equation	Temperature/K	Δ_rS_T/(J·mol^-1·K^-1)	Δ_rH_T/(kJ·mol^-1)	Δ_rG_T/(kJ·mol^-1)
0.25Te+0.75Ni_0.667Te→Ni_0.5Te	298.15	-2.427	-7.903	-7.180
	600.00	-3.180	-8.253	-6.345
	700.00	-3.484	-8.451	-6.012
0.449Te+0.551Ni_0.908Te→Ni_0.5Te	298.15	-4.182	-15.177	-13.930
	600.00	-5.083	-15.586	-12.536
	700.00	-5.426	-15.809	-12.010
1.5Ni+Te→Ni_1.5Te	298.15	5.692	-57.500	-59.197
	600.00	5.969	-57.318	-60.899
	700.00	8.110	-56.023	-61.700

表S3 各层材料的密度ρ、摩尔质量M以及每摩尔物质中结合态Te的物质的量n

Table S3 Density (ρ), molar mass (M) and moles of the bound Te per mole substance

Item	NiTe₂ (Ni_0.5Te)	NiTe_1.776 (Ni_0.563Te)	NiTe_1.5 (Ni_0.667Te)	NiTe_1.2 (Ni_0.833Te)	NiTe_1.1 (Ni_0.908Te)	Ni	Te	NiTe_0.667 (Ni_1.5Te)
M/(g·mol^-1)	313.893	285.311	250.093	211.813	199.053	58.693	127.600	143.802
n	2.000	1.776	1.500	1.200	1.100	0.000	-	0.667
ρ/(g·cm^-3)	7.701	7.565	7.363	7.086	6.976	8.910	-	8.126

图S6 老化前在180 K温差(热端473 K, 冷端293 K)条件下Ni0.5Te/Te0.985Sb0.015/Ni0.5Te单臂器件的性能

Fig. S6 Performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K) (a) Current-dependent output voltage, Uout; (b) Current-dependent heat flux, Q

图S7 180 K温差 (热端473 K, 冷端293 K)条件下Ni0.5Te/Te0.985Sb0.015/Ni0.5Te单臂器件的性能随老化时间的变化

Fig. S7 Aging-time dependent performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K) (a, c) Current-dependent output voltages, Uout and (b, d) current-dependent heat flux, Q, after aging for (a, b) 3 and (c, d) 6-15 d; Aging-time dependent (e) open-circuit voltage, Uo and (f) internal resistance, Rin with inset in (f) showing internal resistivity, R, of the devices

参考文献 43

[1]	WEI J, YANG L, MA Z, et al. Review of current high-ZT thermoelectric materials. Journal of Materials Science, 2020, 55(27): 12642.
[2]	LIU H T, SUN Q, ZHONG Y, et al. Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder. Materials Today Physics, 2022, 24: 100677.
[3]	SU L, WANG D, WANG S, et al. High thermoelectric performance realized through manipulating layered phonon-electron decoupling. Science, 2022, 375(6587): 1385.
[4]	SUN J, WANG R, CUI W, et al. Percolation process-mediated rich defects in hole-doped PbSe with enhanced thermoelectric performance. Chemistry of Materials, 2022, 34(14): 6450.
[5]	AN D, WANG J, ZHANG J, et al. Retarding Ostwald ripening through Gibbs adsorption and interfacial complexions leads to high-performance SnTe thermoelectrics. Energy & Environmental Science, 2021, 14(10): 5469.
[6]	YANG J, LI G, ZHU H, et al. Next-generation thermoelectric cooling modules based on high-performance Mg₃(Bi,Sb)₂ material. Joule, 2022, 6(1): 193.
[7]	CHU J, HUANG J, LIU R, et al. Electrode interface optimization advances conversion efficiency and stability of thermoelectric devices. Nature Communications, 2020, 11(1): 2723.
[8]	BJØRK R. The universal influence of contact resistance on the efficiency of a thermoelectric generator. Journal of Electronic Materials, 2015, 44(8): 2869.
[9]	ZHANG Q H, BAI S Q, CHEN L D. Technologies and applications of thermoelectric devices: current status, challenges and prospects. Journal of Inorganic Materials, 2019, 34(3): 279.
[10]	WU X, HAN Z, ZHU Y, et al. A general design strategy for thermoelectric interface materials in n-type Mg₃Sb_1.5Bi_0.5 single leg used in TEGs. Acta Materialia, 2022, 226: 117616.
[11]	HU X K, ZHANG S M, ZHAO F, et al. Thermoelectric device: contact interface and interface materials. Journal of Inorganic Materials, 2019, 34(3): 269.
[12]	SAKANO M, HIRAYAMA M, TAKAHASHI T, et al. Radial spin texture in elemental tellurium with chiral crystal structure. Physical Review Letters, 2020, 124(13): 136404.
[13]	REITZ J R. Electronic band structure of selenium and tellurium. Physical Review, 1957, 105(4): 1233.
[14]	李蓉, 陈少平, 樊文浩, 等. 孤对电子对碲热电传输性能的影响. 材料导报, 2018, 32(21): 3726.
[15]	LIN S Q, LI W, ZHANG X Y, et al. Sb induces both doping and precipitation for improving the thermoelectric performance of elemental Te. Inorganic Chemistry Frontiers, 2017, 4(6): 1066.
[16]	RAO F, DING K, ZHOU Y, et al. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science, 2017, 358(6369): 1423.
[17]	GUO J, FAN W, WANG Y, et al. Study on improving comprehensive property of Te-based thermoelectric joint. Journal of Alloys and Compounds, 2021, 886: 161242.
[18]	郭敬云, 陈少平, 樊文浩, 等. 改善Te基热电材料与复合电极界面性能. 物理学报, 2020, 69(14): 179.
[19]	HE Z, CHANG L G, LIN Y, et al. Real-time visualization of solid-phase ion migration kinetics on nanowire monolayer. Journal of the American Chemical Society, 2020, 142(17): 7968.
[20]	TASHIRO M, SUKENAGA S, IKEMOTO K, et al. Interfacial reactions between pure Cu, Ni, and Ni-Cu alloys and p-type Bi₂Te₃ bulk thermoelectric material. Journal of Materials Science, 2021, 56(29): 16545.
[21]	FERRERES X R, AMINORROAYA YAMINI S, NANCARROW M, et al. One-step bonding of Ni electrode to n-type PbTe—a step towards fabrication of thermoelectric generators. Materials & Design, 2016, 107: 90.
[22]	ZHANG J, WEI P, ZHANG H, et al. Enhanced contact performance and thermal tolerance of Ni/Bi₂Te₃ joints for Bi₂Te₃-based thermoelectric devices. ACS Applied Materials & Interfaces, 2023, 15(18): 22705.
[23]	CHEN J, FAN W, WANG Y, et al. Improvement of stability in a Mg₂Si-based thermoelectric single-leg device via Mg₅₀Si₁₅Ni₅₀ barrier. Journal of Alloys and Compounds, 2022, 926: 166888.
[24]	WANG Y, CHEN J, JIANG Y, et al. Suppression of interfacial diffusion in Mg₃Sb₂ thermoelectric materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-graded structure. ACS Applied Materials & Interfaces, 2022, 14(29): 33419.
[25]	CHEN S, CHEN J, FAN W, et al. Improvement of contact and bonding performance of Mg₂Si/Mg₂SiNi₃ thermoelectric joints by optimizing the concentration gradient of Mg. Journal of Electronic Materials, 2022, 51(5): 2256.
[26]	SUN Y, YIN L, ZHANG Z, et al. Low contact resistivity and excellent thermal stability of p-type YbMg_0.8Zn_1.2Sb₂/Fe-Sb junction for thermoelectric applications. Acta Materialia, 2022, 235: 118066.
[27]	SUN Z, CHEN X, ZHANG J, et al. Achieving reliable CoSb₃ based thermoelectric joints with low contact resistivity using a high-entropy alloy diffusion barrier layer. Journal of Materiomics, 2022, 8(4): 882.
[28]	ARVHULT C M, GUÉNEAU C, GOSSÉ S, et al. Thermodynamic assessment of the Ni-Te system. Journal of Materials Science, 2019, 54(16): 11304.
[29]	LIAO C N, LEE C H, CHEN W J. Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper. Electrochemical and Solid-State Letters, 2007, 10(9): 23.
[30]	XIA H, CHEN C L, DRYMIOTIS F, et al. Interfacial reaction between Nb foil and n-type PbTe thermoelectric materials during thermoelectric contact fabrication. Journal of Electronic Materials, 2014, 43(11): 4064.
[31]	LI C C, DRYMIOTIS F, LIAO L L, et al. Interfacial reactions between PbTe-based thermoelectric materials and Cu and Ag bonding materials. Journal of Materials Chemistry C, 2015, 3(40): 10590.
[32]	WANG X, GU M, LIAO J C, et al. High temperature interfacial stability of Fe/Bi_0.5Sb_1.5Te₃ thermoelectric elements. Journal of Inorganic Materials, 2021, 36(2): 197.
[33]	TSUTOMU K, HIROMASA T, SATO H K, et al. Enhancement of average thermoelectric figure of merit by increasing the grain-size of Mg_3.2Sb_1.5Bi_0.49Te_0.01. Applied Physics Letters, 2018, 112(3): 33903.
[34]	AN D, CHEN S, LU Z, et al. Low thermal conductivity and optimized thermoelectric properties of p-type Te-Sb₂Se₃: synergistic effect of doping and defect engineering. ACS Applied Materials & Interfaces, 2019, 11(31): 27788.
[35]	NORÉN L, TING V, WITHERS R L, et al. An electron and X-ray diffraction investigation of Ni₁₊_xTe₂ and Ni₁₊_xSe₂CdI₂/NiAs type solid solution phases. Journal of Solid State Chemistry, 2001, 161(2): 266.
[36]	ANDERSON J S. Nonstoichiometric compounds: a critique of current structural views. Proceedings of the Indian Academy of Sciences - Chemical Sciences, 1984, 93(6): 861.
[37]	CHEN J, ZHANG Y, YU Z, et al. Interface growth and void formation in Sn/Cu and Sn_0.7Cu/Cu systems. Applied Sciences, 2018, 8(12): 2703.
[38]	LIN Y, WU X, LI Y, et al. Revealing multi-stage growth mechanism of Kirkendall voids at electrode interfaces of Bi₂Te₃-based thermoelectric devices with in-situ TEM technique. Nano Energy, 2022, 102: 107736.
[39]	LIU R, XING Y, LIAO J, et al. Thermal-inert and ohmic-contact interface for high performance half-Heusler based thermoelectric generator. Nature Communications, 2022, 13(1): 7738.
[40]	BALL R G J, DICKINSON S, CORDFUNKE E H P, et al. Thermochemical data acquisition. Part II. Luxembourg: Commission of the European Communities, 1992: 106.
[41]	BARIN I. Thermochemical data of pure substances. 3rd ed. Weinheim: VCH Verlagsgesellschaft mbH, 1995: 1198.
[42]	叶贡欣. 扩散控制固相反应动力学关系的研究. 合肥水泥研究设计院院刊, 1992(1): 10.
[43]	陈立东, 刘睿恒, 史迅. 热电材料与器件. 北京: 科学出版社, 2018: 1.

Te基热电器件反常界面层生长行为及界面稳定性研究

Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 17

参考文献 43

相关文章 15

编辑推荐

Metrics

本文评价

[1]	陈浩, 樊文浩, 安德成, 陈少平. 能带优化和载流子调控改善SnTe的热电性能[J]. 无机材料学报, 2024, 39(3): 306-312.
[2]	张哲, 孙婷婷, 王连军, 江莞. 不同维度Ag₂Se构筑柔性热电薄膜的性能优化与器件集成研究[J]. 无机材料学报, 2024, 39(11): 1221-1227.
[3]	孟雨婷, 王雪梅, 章淑娴, 陈志炜, 裴艳中. Bi₂Te₃基热电材料的单带和双带传输特性转变[J]. 无机材料学报, 2024, 39(11): 1283-1291.
[4]	胡忠良, 傅赟天, 蒋蒙, 王连军, 江莞. Nb/Mg₃SbBi界面层热稳定性研究[J]. 无机材料学报, 2023, 38(8): 931-937.
[5]	肖娅妮, 吕嘉南, 李振明, 刘铭扬, 刘伟, 任志刚, 刘弘景, 杨东旺, 鄢永高. Bi₂Te₃基热电材料的湿热稳定性研究[J]. 无机材料学报, 2023, 38(7): 800-806.
[6]	李悦, 张旭良, 景芳丽, 胡章贵, 吴以成. 铈掺杂硼酸钙镧晶体的生长与性能研究[J]. 无机材料学报, 2023, 38(5): 583-588.
[7]	王磊, 李建军, 宁军, 胡天玉, 王洪阳, 张占群, 武琳馨. CoFe₂O₄@Zeolite催化剂活化过一硫酸盐对甲基橙的强化降解: 性能与机理[J]. 无机材料学报, 2023, 38(4): 469-476.
[8]	孙晗, 李文俊, 贾子璇, 张岩, 殷利迎, 介万奇, 徐亚东. ACRT技术对大尺寸ZnTe晶体溶液法制备及其性能影响[J]. 无机材料学报, 2023, 38(3): 310-315.
[9]	华思恒, 杨东旺, 唐昊, 袁雄, 展若雨, 徐卓明, 吕嘉南, 肖娅妮, 鄢永高, 唐新峰. n型Bi₂Te₃基材料表面处理对热电单元性能的影响[J]. 无机材料学报, 2023, 38(2): 163-169.
[10]	鲁志强, 刘可可, 李强, 胡芹, 冯利萍, 张清杰, 吴劲松, 苏贤礼, 唐新峰. p型多晶Bi_0.5Sb_1.5Te₃合金类施主效应与热电性能[J]. 无机材料学报, 2023, 38(11): 1331-1337.
[11]	万家宝, 张明辉, 苏怀宇, 曹枝军, 刘学超, 谢坚生, 王祥远, 时英辉, 王亮, 雷水金. GeO₂-La₂O₃-TiO₂玻璃的结构、热学和光学性质[J]. 无机材料学报, 2023, 38(10): 1230-1236.
[12]	洪督, 牛亚然, 李红, 钟鑫, 郑学斌. 等离子喷涂TiC-Graphite复合涂层摩擦磨损性能[J]. 无机材料学报, 2022, 37(6): 643-650.
[13]	娄许诺, 邓后权, 李爽, 张青堂, 熊文杰, 唐国栋. Ge掺杂MnTe材料的热电输运性能[J]. 无机材料学报, 2022, 37(2): 209-214.
[14]	任培安, 汪聪, 訾鹏, 陶奇睿, 苏贤礼, 唐新峰. Te与In共掺杂对Cu₂SnSe₃热电性能的影响[J]. 无机材料学报, 2022, 37(10): 1079-1086.
[15]	张岑岑, 王雪, 彭良明. 基于分步式双重调控n型(PbTe)_1-_x_-_y(PbS)_x(Sb₂Se₃)_y体系的热电传输特性[J]. 无机材料学报, 2021, 36(9): 936-942.