低位错密度8英寸导电型碳化硅单晶衬底制备

doi:10.15541/jim20230325

无机材料学报 ›› 2023, Vol. 38 ›› Issue (11): 1371-1372.DOI: 10.15541/jim20230325 CSTR: 32189.14.10.15541/jim20230325

• 科技进展 • 上一篇

低位错密度8英寸导电型碳化硅单晶衬底制备

熊希希¹(), 杨祥龙¹(), 陈秀芳¹(), 李晓蒙¹, 谢雪健¹, 胡国杰¹, 彭燕¹, 于国建², 胡小波¹, 王垚浩², 徐现刚¹

1.山东大学晶体材料国家重点实验室, 新一代半导体材料研究院，济南 250100
2.广州南砂晶圆半导体技术有限公司, 广州 511458

收稿日期:2023-07-18 修回日期:2023-08-04 出版日期:2023-08-21 网络出版日期:2023-08-21
通讯作者: 杨祥龙, 副教授. E-mail: yangxl2016@sdu.edu.cn;
陈秀芳, 教授. E-mail: cxf@sdu.edu.cn
作者简介:熊希希(1994-), 男, 博士研究生. E-mail: xiongxixi@summitcrystal.com
基金资助:
国家自然科学基金(52022052);国家自然科学基金(62004118);山东省重点研发计划(2022ZLGX02)

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

XIONG Xixi¹(), YANG Xianglong¹(), CHEN Xiufang¹(), LI Xiaomeng¹, XIE Xuejian¹, HU Guojie¹, PENG Yan¹, YU Guojian², HU Xiaobo¹, WANG Yaohao², XU Xiangang¹

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2. Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China

Received:2023-07-18 Revised:2023-08-04 Published:2023-08-21 Online:2023-08-21
Contact: YANG Xianglong, associate professor. E-mail: yangxl2016@sdu.edu.cn;
CHEN Xiufang, professor. E-mail: cxf@sdu.edu.cn
About author:XIONG Xixi (1994-), male, PhD candidate. E-mail: xiongxixi@summitcrystal.com
Supported by:
National Natural Science Foundation of China(52022052);National Natural Science Foundation of China(62004118);Shandong Province Key R&D Program(2022ZLGX02)

摘要/Abstract

摘要：

碳化硅具有优异的物理化学性能, 在电动汽车、轨道交通、高压输变电、光伏、5G通信等领域具有广泛应用前景。8英寸(1英寸=2.54 cm)SiC衬底在降低器件单位成本、增加产能供应方面具有巨大的潜力, 成为行业重要的技术发展方向。近期山东大学与广州南砂晶圆半导体技术有限公司在8英寸SiC衬底位错缺陷控制方面取得了重大突破, 使用物理气相传输法(Physical vapor transport, PVT)制备了低位错密度8英寸导电型4H-SiC单晶衬底, 其中螺位错(Threading screw dislocation, TSD)密度为0.55 cm^-2, 基平面位错(Basal plane dislocation, BPD)密度为202 cm^-2。

关键词: 4H-SiC, 8英寸, 低位错密度, 单晶衬底

Abstract:

Silicon carbide (SiC) has wide application in electric vehicles, rail transit, high voltage power transmission and transformation, photovoltaic, and 5G communication owing to its excellent physical and chemical properties. 8-inch SiC substrate has great potential in reducing unit cost of devices and increasing capacity supply, and has become an important technology development direction of the industry. Recently, Shandong University and Guangzhou Summit Crystal Semiconductor Co., Ltd. have made a major breakthrough in the control of dislocation defects in 8-inch SiC substrates. The 8-inch n-type 4H-SiC single crystal substrate with low dislocation density has been fabricated by physical vapor transport (PVT) method, of which the threading screw dislocation (TSD) density is 0.55 cm^-2, and the basal plane dislocation (BPD) density is 202 cm^-2.

Key words: 4H-SiC, 8-inch, low dislocation density, single crystal substrate

中图分类号:

TQ174

熊希希, 杨祥龙, 陈秀芳, 李晓蒙, 谢雪健, 胡国杰, 彭燕, 于国建, 胡小波, 王垚浩, 徐现刚. 低位错密度8英寸导电型碳化硅单晶衬底制备[J]. 无机材料学报, 2023, 38(11): 1371-1372.

XIONG Xixi, YANG Xianglong, CHEN Xiufang, LI Xiaomeng, XIE Xuejian, HU Guojie, PENG Yan, YU Guojian, HU Xiaobo, WANG Yaohao, XU Xiangang. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371-1372.

图/表 2

图1 8英寸导电型4H-SiC单晶衬底以及对应的BPD密度分布

Fig. 1 8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution (a) 8-inch conductive 4H-SiC single crystal substrate; (b) BPD density mapping

图2 TSD密度为0.55 cm-2的分布图和TSD特征腐蚀坑统计分布

Fig. 2 Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits (a) TSD density mapping; (b) The number of TSDs characteristic etch pits with different sizes

参考文献 10

[1]	SIERGIEJ R R, CLARKE R C, SRIRAM S, et al. Advances in SiC materials and devices: an industrial point of view. Materials Science and Engineering: B, 1999, 61: 9.
[2]	CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid State Electron, 1996, 39(10): 1409. DOI URL
[3]	CHENG L, PALMOUR J W, AGARWAL A K, et al. Strategic overview of high-voltage SiC power device development aiming at global energy savings. Materials Science Forum, 2014, 778: 1089.
[4]	MORVAN E, KERLAIN A, DUA C, et al. Influence of material properties on wide-bandgap microwave power device characteristics. Materials Science Forum, 2003, 433: 731.
[5]	MAKAROV Y N, LITVIN D, VASILIEV A, et al. Sublimation growth of 4 and 6 inch 4H-SiC low defect bulk crystals in Ta (TaC) crucibles. Materials Science Forum, 2016, 858: 101. DOI URL
[6]	CHOI J W, KIM J G, JANG B K, et al. Modified hot-zone design for large diameter 4H-SiC single crystal growth. Materials Science Forum, 2019, 963: 18. DOI URL
[7]	PENG Y, CHEN X F, PENG J, et al. Study on the growth of high quality semi-insulating ϕ150 mm 4H-SiC single crystal. Journal of Synthetic Crystals, 2016, 45(5): 1145.
[8]	YANG X L, CHEN X F, XIE X J, et al. Growth of 8 inch conductivity type 4H-SiC single crystals. Journal of Synthetic Crystals, 2022, 51(9): 1745.
[9]	LOU Y F, GONG T C, ZHANG W, et al. Fabrication and characterizations of 8-inch n type 4H-SiC single crystal substrate. Journal of Synthetic Crystals, 2022, 51(12): 2131.
[10]	YANG G, LIU X S, LI J J. et al. Dislocations in 4H silicon carbide single crystals. Journal of Synthetic Crystals, 2022, 51(9): 1673.

[1]	晁少飞, 薛艳辉, 吴琼, 伍复发, MUHAMMAD Sufyan Javed, 张伟. MXene异质结Ti-O-H-O电子快速通道促进高效率储钾[J]. 无机材料学报, 2024, 39(11): 1212-1220.
[2]	任冠源, 李宜冠, 丁冬海, 梁瑞虹, 周志勇. CaBi₂Nb₂O₉铁电薄膜的生长取向调控和性能研究[J]. 无机材料学报, 2024, 39(11): 1228-1234.
[3]	谢天, 宋二红. 弹性应变对C、H、O在过渡金属氧化物表面吸附的影响[J]. 无机材料学报, 2024, 39(11): 1292-1300.
[4]	张哲, 孙婷婷, 王连军, 江莞. 不同维度Ag₂Se构筑柔性热电薄膜的性能优化与器件集成研究[J]. 无机材料学报, 2024, 39(11): 1221-1227.
[5]	陶顺衍, 杨加胜, 邵芳, 吴应辰, 赵华玉, 董绍明, 张翔宇, 熊瑛. 航机CMC热端部件用热喷涂涂层的机遇与挑战[J]. 无机材料学报, 2024, 39(10): 1077-1083.
[6]	江强, 施立志, 陈政燃, 周志勇, 梁瑞虹. 高于居里温度极化的硬性PZT压电陶瓷的制备及叠层驱动器性能研究[J]. 无机材料学报, 2024, 39(10): 1091-1099.
[7]	彭萍, 谭礼涛. CuO掺杂(Ba,Ca)(Ti,Sn)O₃陶瓷的结构与压电性能[J]. 无机材料学报, 2024, 39(10): 1100-1106.
[8]	王博, 蔡德龙, 朱启帅, 李达鑫, 杨治华, 段小明, 李雅楠, 王轩, 贾德昌, 周玉. SrAl₂Si₂O₈增强BN陶瓷的力学性能及抗热震性能[J]. 无机材料学报, 2024, 39(10): 1182-1188.
[9]	史瑞, 刘伟, 李林, 李欢, 张志军, 饶光辉, 赵景泰. BaSrGa₄O₈: Tb³⁺力致发光材料的制备及性能[J]. 无机材料学报, 2024, 39(10): 1107-1113.
[10]	陈梦杰, 王倩倩, 吴成铁, 黄健. 基于DFT的描述符预测生物陶瓷的降解性[J]. 无机材料学报, 2024, 39(10): 1175-1181.
[11]	瞿牡静, 张淑兰, 朱梦梦, 丁浩杰, 段嘉欣, 代恒龙, 周国红, 李会利. CsPbBr₃@MIL-53纳米复合荧光粉的合成、性能及其白光LEDs应用[J]. 无机材料学报, 2024, 39(9): 1035-1043.
[12]	杨佳霖, 王亮君, 阮丝园, 蒋秀林, 杨长. 基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器[J]. 无机材料学报, 2024, 39(9): 1063-1069.
[13]	王旭, 李翔, 寇华敏, 方伟, 吴庆辉, 苏良碧. 不同浓度Y³⁺离子掺杂对CaF₂晶体性能的影响[J]. 无机材料学报, 2024, 39(9): 1029-1034.
[14]	荀道祥, 罗序维, 周明冉, 何佳乐, 冉茂进, 胡执一, 李昱. 锂硒电池ZIF-L衍生氮掺杂碳纳米片/碳布自支撑电极的电化学性能研究[J]. 无机材料学报, 2024, 39(9): 1013-1021.
[15]	陈甲, 范依然, 闫文馨, 韩颖超. 聚丙烯酸-钙(铈)纳米团簇荧光探针用于无机磷定量检测研究[J]. 无机材料学报, 2024, 39(9): 1053-1062.

低位错密度8英寸导电型碳化硅单晶衬底制备

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 2

参考文献 10

相关文章 15

编辑推荐

Metrics

本文评价