A/B位双取代钛酸铋钠基压电陶瓷性能研究

doi:10.15541/jim20170398

摘要/Abstract

摘要：

采用固相烧结方法制备了Bi、Co同时取代化学计量比钛酸铋钠基(Bi_0.5+_x_/2Na_0.5-_x_/2)_0.94Ba_0.06Ti_1-_xCo_xO₃无铅压电陶瓷, 研究了材料中A/B位缺陷对其电滞回线和电致应变的影响。结果表明陶瓷具有均一的赝立方结构, 随着掺杂量的增加, 材料铁电-弛豫相转变温度降低, 应变增加。同时材料在疲劳过程中伴随着弛豫相的增多, 在较低电场下产生较大的应变(0.458%), 逆压电常数d₃₃^*达到770 pm/V。介电温谱和电滞回线上反常变化与化学计量比陶瓷中产生的A/B位缺陷偶极子密切相关, 并表明这种缺陷偶极子是以氧空位为媒介形成的。

关键词: 钛酸铋钠, 铁电, 电致应变, 缺陷

Abstract:

Bi and Co substituted stoichiometric bismuth sodium titanate based lead free piezoelectrics, (Bi_0.5+_x_/2Na_0.5-_x_/2)_0.94Ba_0.06Ti_1-_xCo_xO₃, were prepared by using a solid-state reaction method. The effects of combined A/B sites defects on polarization hysteresis and electric-induced-strain properties of materials were explored. It is shown that single pseudocubic structure is revealed in all samples. Substitution leads to downward shift of the ferroelectric-relaxor transition temperature and increase in strain. Meanwhile, the samples exhibit high strain of 0.458% and inverse piezoelectric coefficient d₃₃^* of 770 pm/V, accompanied by an increased fraction of relaxor phase during fatigue test. The anomalies in temperature dependent dielectrics and hysteresis loops are highly related to the formation of A/B sites defect dipoles which mediated by oxygen vacancies in stoichiometric ceramics.

Key words: bismuth sodium titanate, ferroelectrics, electric-induced-strain, defects

中图分类号:

TM282

刘霄, 徐小敏, 杜慧玲. A/B位双取代钛酸铋钠基压电陶瓷性能研究[J]. 无机材料学报, 2018, 33(6): 683-687.

LIU Xiao, XU Xiao-Min, DU Hui-Ling. Property of A/B Sites Substituted Bismuth Sodium Titanate Based Piezoelectrics[J]. Journal of Inorganic Materials, 2018, 33(6): 683-687.

图/表 6

图1 (Bi0.5+x/2Na0.5-x/2)0.94Ba0.06Ti1-xCoxO3陶瓷的表面扫描电镜照片和材料晶粒尺寸随掺杂量的变化图

Fig. 1 Surface SEM images of xCo-BNBT ceramics((a)x=0, (b)x=0.5mol%, (c)x=0.75mol%, (d) x=1mol%, (e) x=3mol%, and(f) Change of grain size with Co dopant

图2 (a)不同频率下1mol%Co-BNBT介电常数及介电损耗随温度变化图谱和(b)xCo-BNBT在1 kHz下的介电常数及介电损耗温度图谱

Fig. 2 (a) Temperature dependence of dielectric permittivity and dielectric loss of 1mol%Co-BNBT at different frequencies and (b) temperature dependence of relative dielectric permittivity and loss of xCo-BNBT at 1 kHz

图3 在60 kV/cm电场下, xCo-BNBT陶瓷室温下的电滞回线、电流曲线和应变曲线

Fig. 3 P-E, J-E and S-E loops of xCo-BNBT ceramics under 60 kV/cm electric field at room temperature

图4 在60 kV/cm电场下, 1mol%Co-BNBT陶瓷在不同温度下的电滞回线和电流曲线

Fig. 4 P-E and J-E loops of 1mol%Co-BNBT ceramics under 60 kV/cm electric field at different temperatures

图5 在60 kV/cm电场下, 2mol%Co-BNBT陶瓷分别在空气和氮气气氛下退火后的电滞回线和电流曲线

Fig. 5 P-E and J-E loops of 2mol%Co-BNBT ceramics under 60 kV/cm electric field after treatment in air and nitrogen, respectively

图6 在75℃, 1mol%Co-BNBT陶瓷疲劳的应变曲线

Fig. 6 Fatigue strain curves on S-E loops of 1mol%Co-BNBT ceramics at 75℃

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