A位La/Sr 共掺杂PbZrO3薄膜的制备及储能特性优化

doi:10.15541/jim20240087

摘要/Abstract

摘要： 反铁电材料凭借超高的功率密度,在电介质能量存储领域具有极高的研究热度。锆酸铅(PbZrO₃, PZO)是反铁电材料的典型代表,也是研究最为广泛的反铁电材料之一,如何提升锆酸铅基材料的储能性能是目前的研究重点。本工作在La³⁺掺杂PZO的基础上,进一步将小半径的Sr²⁺掺入到PZO钙钛矿结构的A位,实现了PbZrO₃基反铁电薄膜储能性能的进一步提升。采用溶胶-凝胶法制备了A位La/Sr共掺杂Pb_0.94-_xLa_0.04Sr_xZrO₃(Sr-PLZ-x, x = 0, 0.03, 0.06, 0.09, 0.12)系列反铁电薄膜,系统研究了Sr²⁺掺杂对Sr-PLZ-x反铁电薄膜的晶体结构,以及铁电性能、储能性能和疲劳性能等的影响。结果表明：随着Sr²⁺的掺入量x的增加,Sr-PLZ-x 薄膜的晶格常数不断减小,薄膜的饱和极化强度先略增加并保持,后逐渐降低。同时,Sr-PLZ-x薄膜的容忍因子逐步降低,薄膜转折电场不断增大,反铁电性逐渐增强,击穿场强有所提高,Sr-PLZ-x薄膜的储能性能得到提高。在x=0.03时,Sr-PLZ-x反铁电薄膜的储能密度和效率分别达到31.7 J/cm³和71%,储能性能达到最优。同时Sr²⁺的掺入也使得Sr-PLZ-x反铁电薄膜的疲劳特性得到进一步优化,其中x=0.12组分薄膜样品在经历了10⁷次循环后,储能密度和储能效率仅有3.4%和2.7%的衰减。综上所述,A位La/Sr共掺杂的方法,可有效提高锆酸铅基反铁电薄膜的储能性能。

关键词: 元素掺杂, 锆酸铅, 反铁电, 储能

Abstract: Antiferroelectric materials have been extensively studied in the field of dielectric energy storage due to the ultra-high power density. PbZrO₃, as a prototype of antiferroelectric materials, has been one of the most studied antiferroelectric materials, and the research on methods to enhance the energy storage performance of lead zirconate-based materials is the focus of the current study. In this work, further improvement of the energy storage performance of PbZrO₃-based antiferroelectric thin films was realized by further doping small-radius Sr²⁺ into the A-site of the PZO perovskite structure on the basis of La³⁺-doped PZO. A series of antiferroelectric thin films of A-site La/Sr co-doped Pb_0.94-_xLa_0.04Sr_xZrO₃(Sr-PLZ-x, x = 0, 0.03, 0.06, 0.09, 0.12) were prepared by Sol-Gel method, and the effects of Sr²⁺ doping on the crystal structure and electrical properties such as ferroelectricity, energy storage, and fatigue properties of Sr-PLZ-x antiferroelectric films were systematically investigated. The results show that with the doping of Sr²⁺, the lattice constants are gradually reduced, and the saturation polarization of the films first slightly increases and maintains, then gradually decreases. The tolerance factor of Sr-PLZ-x films reduced with increasing Sr²⁺ content, and the antiferroelectricity of the films are enhanced. Both the switching field and the breakdown strength are increased, resulting in an improved energy storage performance of Sr-PLZ-x films. At x=0.03, the energy storage performance of Sr-PLZ-x antiferroelectric films reaches the highest, with the energy storage density and efficiency are 31.7 J/cm³ and 71%, respectively. Meanwhile, the doping of Sr²⁺ also makes the fatigue characteristics of Sr-PLZ-x antiferroelectric films further improved. The x=0.12 film exhibited only 3.4% and 2.7% degradation in energy storage density and energy storage efficiency after 10⁷ cycles. In summary, the doping method of A-site La/Sr co-doping can effectively improve the energy storage performance of lead zirconate-based antiferroelectric films.

Key words: elemental doping, lead zirconate, antiferroelectric, energy storage

中图分类号:

TB34

沈浩, 陈倩倩, 周渤翔, 唐晓东, 张媛媛. A位La/Sr 共掺杂PbZrO₃薄膜的制备及储能特性优化[J]. 无机材料学报, DOI: 10.15541/jim20240087.

SHEN Hao, CHEN Qianqian, ZHOU Boxiang, TANG Xiaodong, ZHANG Yuanyuan. Preparation and Energy Storage Properties of A-site La/Sr Co-doped PZO Thin Films[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20240087.

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A位La/Sr 共掺杂PbZrO₃薄膜的制备及储能特性优化

Preparation and Energy Storage Properties of A-site La/Sr Co-doped PZO Thin Films

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