Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (2): 215-219.doi: 10.3724/SP.J.1077.2013.13385

• Research Letter • Previous Articles     Next Articles

Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method

CAO Li-Li, WANG Yao, DENG Yuan, LUO Bing-Wei, ZHU Wei, SHI Yong-Ming,LIN Zhen   

  1. (Beijing Key Laboratory of Special Functional Materials and Films, School of Material Science and Engineering, Beihang University, Beijing 100191, China)
  • Received:2013-08-05 Revised:2013-09-16 Online:2014-02-20 Published:2014-01-17
  • Contact: DENG Yuan, professor. E-mail:dengyuan@buaa.edu.cn
  • About author:CAO Li-Li(1986-), female, candidate of PhD. E-mail: youyidiyi_04caihua@163.com
  • Supported by:

    National Natural Science Foundation of China(50772005, 51002006); National High Technology Research and Development Program of China(2009AA03Z322); Fundamental Research Funds for the Central Universities and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS

Abstract: A simple magnetron co-sputtering method was used to fabricate Cu dispersed Bi0.5Sb1.5Te3 thin films, and the co-sputtering method was beneficial to the preferential growth of Bi0.5Sb1.5Te3 thin films along c-axis. Cu atoms were well-dispersed in the nano-structured materials. The electrical conductivity sharply increased with the increasing content of Cu due to the effect of Cu on transport property. For Cu target sputtering power of 20 W, a maximum power factor of 20 μW/(cm?K2) with an electrical conductivity of 15 × 104 S/m at 355 K were achieved.

Key words: semiconductors, thin films, thermoelectric properties, magnetron sputtering

CLC Number: 

  • TB34