Journal of Inorganic Materials ›› 2018, Vol. 33 ›› Issue (9): 1017-1021.DOI: 10.15541/jim20170603

• Orginal Article • Previous Articles     Next Articles

Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO3 Thin Films by Off-axis Magnetron Sputtering

SONG Jian-Min1, 2, DAI Xiu-Hong1, LIANG Jie-Tong1, ZHAO Lei1, ZHOU Yang1, GE Da-Yong1, MENG Xu-Dong3, LIU Bao-Ting1   

  1. 1. College of Physics Science & Technology, Hebei University, Baoding 071002, China;
    2. College of Science, Agriculture University of Hebei, Baoding 071001, China;
    3. College of Science, Hebei North University, Zhangjiakou 075000, China
  • Received:2017-12-20 Revised:2018-02-11 Published:2018-09-20 Online:2018-08-14
  • About author:SONG Jian-Min. E-mail:
  • Supported by:
    National Natural Science Foundation of China (11374086, 11474174);Natural Science Foundation of Hebei Province (E2014201188, E2014201063, A2018201168);Foundation of Education Bureau of Hebei Province (2016058);Science and Technology Fund of Hebei Agriculture University (ZD 20160614)


The Pt/BiFeO3/La0.5Sr0.5CoO3/SrTiO3(Pt/BFO/LSCO/STO) heterostructures were fabricated on (001) SrTiO3 substrate by off-axis RF magnetron sputtering, on which epitaxial BiFeO3 (BFO) thin films were suecessfully grown. The BFO thin film shows good crystal quality with (00l) epitaxial growth as confirmed by the atomic force microscope (AFM) and X-ray diffraction (XRD). Pt/BFO/LSCO capacitor exhibits a saturated butterfly loop with tuning rate of 14.1% and dielectric loss of 0.19 at 5 V driving voltage. Moreover, the resistance changes from high value to low value with positive voltage 0→5→0 V and negative voltage 0→-5→0 V, which displays switch behavior of ferroelectric diode resistance-change. Based on the I-V fitting curves, the resistance change mechanism fits the space charge limited current trap level when 0→5→0→-5 V and the interface limit F-N tunneling mechanism as -5→0 V, respectively.


Key words: BiFeO3 thin films, dielectric constant, resistive effect, conduction mechanism

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