Journal of Inorganic Materials ›› 2019, Vol. 34 ›› Issue (1): 79-84.DOI: 10.15541/jim20180167

Special Issue: MAX相和MXene材料

• RESEARCH PAPER • Previous Articles     Next Articles

Microfluidic-method-processed p-type NiOx Thin-film Transistors

LIANG Yu1,2, LIANG Ling-Yan1, WU Wei-Hua1, PEI Yu1, YAO Zhi-Qiang2, CAO Hong-Tao1   

  1. 1. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    2. State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials (ICDLCEM), School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
  • Received:2018-04-16 Revised:2018-07-17 Published:2019-01-21 Online:2018-12-17
  • About author:LIANG Yu. E-mail:


It’s essential to develop patterning deposition methods to simplify the process of device fabrication and then reduce the production cost. In this work, a new patterning deposition method, i.e. microfluidic method, was demonstrated in details. In this technology, a micro-fluidic channel with a width of 80 μm and a height of 2 μm can be constructed between PDMS modules and substrates, and under capillary force precursor drops will move through the channel to form a patterned liquid film which is then fixed on the substrate via thermal treatments, and finally patterned films are prepared. In addition, the thermal-driven solidification process from NiOx precursor powder to oxide was investigated through thermogravimetric/differential thermal analysis (TG-DTA) measurement. And the evolution of phase structure of the NiOx precursor powder was analyzed with respect to post-annealing temperatures. Finally, thin-film transistors were fabricated applying the patterned NiOx thin films as channels, and the optimized device showed typical p-type transistor features, with a field-effect mobility up to 0.8 cm2·V-1·s-1.


Key words: oxide semiconductors, solution method, wettability, thin-film transistors, TG-DTA curves

CLC Number: