Study on c BN Films Deposited by r f Plasma assisted CVD

Abstract

Abstract: Boron nitride (BN) films were deposited on a pre-boronised AISI 5140 substrate by r. f. plasma-assisted CVD technique, with nitrogen (N₂),
hydrogen (H₂) or H₂ diluted at 10 vol% in argon (Ar) being carrier gas. It was found by FTIR and SEM analyses that for the three kinds of carrier gas
the c-BN content was the highest if Ar+10% H₂ was used, the film thickness was the thinnest if H₂ was used, and the bonding strength of the film
determined through indentation test, was the poorest if N₂ was used as the carrier gas. TEM analysis indicated that most of the films were the
mixtures of amorphous and cubic BN phases, with the sizes of the c-BN particles being 20--40 nm.

Key words: c-BN films, r. f. PCVD, carrier gas

CLC Number:

TG17

ZHANG Xiao-Ling,HU Nai-Sai,HE Jia-Wen. Study on c BN Films Deposited by r f Plasma assisted CVD[J]. Journal of Inorganic Materials.

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